BAS316WS 200mW, High-speed switching SMD Diode Small Signal Diode SOD-323F Features Fast switching device(Trr<4.0nS) Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish Pb free version, RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Case : Flat lead SOD-323F small outline plastic package A 1.15 1.40 0.045 0.055 Min Max Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 2.30 2.80 0.091 0.106 C 0.25 0.40 0.010 0.016 High temperature soldering guaranteed: 260C/10s D 1.60 1.80 0.063 0.071 Polarity : Indicated by cathode band E 0.80 1.10 0.031 0.043 Weight : 4.60.5 mg F 0.05 0.15 0.002 0.006 Marking Code : W2 Ordering Information Pin Configuration Part No. Package Packing BAS316WS RR SOD-323F 3Kpcs / 7" Reel BAS316WS RRG SOD-323F 3Kpcs / 7" Reel Suggested PAD Layout X1 Y(2X) X(2X) Dimensions Unit (mm) X 0.710 Maximum Ratings and Electrical Characteristics X1 2.900 Rating at 25C ambient temperature unless otherwise specified. Y 0.403 Maximum Ratings Type Number Symbol Value Units Power Dissipation PD 200 mW Average Forward Current IO 250 mA IFSM 4.0 A TJ 150 C TSTG -65 to + 150 C Non-Repetitive Peak Forward Surge Current Pulse Width= 1 usec Pulse Width= 1 msec Operating Junction Temperature Storage Temperature Range 1.0 Notes: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. Version : A10 BAS316WS 200mW, High-speed switching SMD Diode Small Signal Diode Electrical Characteristics Type Number Reverse Breakdown Voltage I= IF = IF = IF = IF = VR= VR= VR= 100 uA 1.0 mA 10 mA 50 mA 150 mA 75 V 25 V 0, f=1.0MHz IF=IR= 10mA, Irr=0.1 x IR, R Forward Voltage Reverse Leakage Current Junction Capacitance Reverse Recovery Time Symbol Min Max Units V(BR) 100 - 0.715 0.855 1.000 1.250 1.00 0.03 1.5 4.0 V VF IR - CJ Trr - V uA pF ns Tape & Reel specification Item Carrier depth Sprocket hole Reel outside diameter TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) Symbol K D A Dimension(mm) 2.40 Max. 1.50 +0.10 178 1 Reel inner diameter D1 50 Min. Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width D2 E F P0 P1 T W W1 13.0 0.5 1.75 0.10 3.50 0.05 4.00 0.10 2.00 0.10 0.6 Max. 8.30 Max. 14.4 Max. W1 Aersion : A10 D2 D1 Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity. Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders. Version : A10 BAS316WS 200mW, High-speed switching SMD Diode Small Signal Diode Rating and Characteristic Curves FIG 2 Reverse Current as a function of junction temperature. 300 100 Ta=25C 275 250 Reverse Current (uA) Instantaneous Forward Current (mA) FIG 1 Typical Forward Characteristics 225 200 175 150 125 100 75 VR=75V 10 VR=75V max 1 VR=25V typ 0.1 50 25 typ 0 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 Instantaneous Forward Voltage (V) 80 100 120 140 160 180 200 o Junction Temperature ( C) FIG 4 Typical Junction Capacitance FIG 3 Admissible Power Dissipation Curve 0.8 250 Junction Capacitance (pF) Ta=25C Power Dissipation (mW) 200 150 100 50 0 0.6 0.4 0.2 0 0 25 50 75 100 125 Ambient Temperature (C) 150 175 0 2 4 6 8 10 12 14 16 Reverse Voltage (V) Version : A10