" SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 3;+6 /+0* ,,+)8 "6'27/7836 N-Channel Enhancement-Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. " * Specified Performance @ 520 MHz, 12.5 Volts Output Power -- 3 Watts Power Gain -- 11 dB Efficiency -- 55% * Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive * Excellent Thermal Stability % * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request 1 * RF Power Plastic Surface Mount Package * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. " 520 MHz, 3 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 2 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 31.25 0.25 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 150 C Symbol Max Unit RJC 4 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1513T1 5.2-61 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 40 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 60 A) VGS(th) 1.0 1.7 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 500 mAdc) VDS(on) -- 0.65 -- Vdc Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 33 -- pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 16.5 -- pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 2.2 -- pF Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz) Gps 10 11 -- dB Drain Efficiency (VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF1513T1 5.2-62 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 4%% ! ! ! 0 0 8 0 0$ ',.32 8 8 8 8 8 8 8 B1, B2 C1, C13 C2, C3, C4, C10, C11, C12 C5, C6, C17 C7, C14 C8, C15 C9, C16 L1 N1, N2 R1, R3 R2 ! ! 8 8 ! 4"" , 8 "32 0$ -32.32 ! ! ! ! ! * ! 0 , ! ! ! ! ! Short Ferrite Beads, Fair Rite Products #2743021446 240 pF, 100 mil Chip Capacitors R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Z11 Board 0 to 20 pF Trimmer Capacitors 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistors (0805) 1 k, 1/8 W Resistor 33 k, 1/8 W Resistor 0.236 x 0.080 Microstrip 0.981 x 0.080 Microstrip 0.240 x 0.080 Microstrip 0.098 x 0.080 Microstrip 0.192 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.705 x 0.080 Microstrip 0.342 x 0.080 Microstrip 0.347 x 0.080 Microstrip 0.846 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 1. 450 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 - 520 MHz 4"" 4?> '0* ',.320#230,*-11? .ION -32.32.-5#05221 +&T +&T +&T +&T +&T +&T +&T 4"" 4?> .DH ',.32 .-5#0 5221 Figure 2. Output Power versus Input Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA +&T .ION -32.32 .-5#0 5221 Figure 3. Input Return Loss versus Output Power MRF1513T1 5.2-63 TYPICAL CHARACTERISTICS, 450 - 520 MHz +&T #AA "0',#$$'!'#,!7 +&T +&T %',? +&T .ION -32.32 .-5#0 5221 #AA "0',#$$'!'#,!7 +&T +&T +&T +&T '"/ '1',% !300#,2 G +&T +&T +&T 4"" 4?> .DH ? G 4"" 4?> .DH ? G +&T Figure 6. Output Power versus Biasing Current '"/ '1',% !300#,2 G Figure 7. Drain Efficiency versus Biasing Current #AA "0',#$$'!'#,!7 .ION -32.32.-5#05221 +&T +&T +&T +&T .DH ? G '"/ G .ION -32.32 .-5#0 5221 Figure 5. Drain Efficiency versus Output Power .ION -32.32.-5#05221 +&T Figure 4. Gain versus Output Power +&T 4"" 4?> 4"" 4?> +&T +&T 4"" 13..*7 4-*2%# 4-*21 Figure 8. Output Power versus Supply Voltage MRF1513T1 5.2-64 +&T +&T +&T +&T .DH ? G '"/ G 4"" 13..*7 4-*2%# 4-*21 Figure 9. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 4%% ! ! ! 0 0 , 0$ ',.32 8 8 8 8 8 8 ! ! * ! 0 0 4"" ! ! 8 8 8 , 8 "32 ! ! 0$ -32.32 ! ! ! B1, B2 C1, C12 C2, C3, C4, C10, C11 C5, C6, C16 C7, C13 C8, C14 C9, C15 L1 N1, N2 R1 R2 ! ! ! 15 Chip Resistor (0805) 33 k, 1/8 W Resistor 0.253 x 0.080 Microstrip 0.958 x 0.080 Microstrip 0.247 x 0.080 Microstrip 0.193 x 0.080 Microstrip 0.132 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.494 x 0.080 Microstrip 0.941 x 0.080 Microstrip 0.452 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R3 R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products #2743021446 330 pF, 100 mil Chip Capacitors 1 to 20 pF Trimmer Capacitors 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 55.5 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistor (0805) 1 k, 1/8 W Resistor Figure 10. 400 - 470 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 470 MHz 4"" 4?> +&T +&T '0* ',.320#230,*-11? .ION -32.32.-5#05221 +&T +&T +&T 4"" 4?> .DH ',.32 .-5#0 5221 Figure 11. Output Power versus Input Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA +&T .ION -32.32 .-5#0 5221 Figure 12. Input Return Loss versus Output Power MRF1513T1 5.2-65 TYPICAL CHARACTERISTICS, 400 - 470 MHz %',? #AA "0',#$$'!'#,!7 +&T +&T .ION -32.32 .-5#0 5221 +&T +&T 4"" 4?> 4"" 4?> +&T +&T Figure 13. Gain versus Output Power .ION -32.32 .-5#0 5221 Figure 14. Drain Efficiency versus Output Power #AA "0',#$$'!'#,!7 .ION -32.32.-5#05221 +&T +&T +&T 4"" 4?> .DH ? G '"/ '1',% !300#,2 G +&T +&T +&T 4"" 4?> .DH ? G Figure 15. Output Power versus Biasing Current +&T +&T #AA "0',#$$'!'#,!7 .ION -32.32.-5#05221 Figure 16. Drain Efficiency versus Biasing Current +&T .DH ? G '"/ G '"/ '1',% !300#,2 G 4"" 13..*7 4-*2%# 4-*21 Figure 17. Output Power versus Supply Voltage MRF1513T1 5.2-66 +&T +&T +&T .DH ? G '"/ G 4"" 13..*7 4-*2%# 4-*21 Figure 18. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 4%% ! ! ! 0 0 , 8 0 * 8 8 8 8 8 8 * 8 ! ! ! B1, B2 C1, C13 C2, C4, C10, C12 C3 C5 C6, C17 C7, C14 C8, C15 C9, C16 C11 L1 L2 L3 ! * 0$ -32.32 8 ! 8 "32 , ! ! ! * ! 0 0$ ',.32 4"" ! ! ! ! ! L4 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Beads, Fair Rite Products #2743021446 330 pF, 100 mil Chip Capacitors 0 to 20 pF Trimmer Capacitors 12 pF, 100 mil Chip Capacitor 130 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,000 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 18 pF, 100 mil Chip Capacitor 26 nH, 4 Turn, Coilcraft 8 nH, 3 Turn, Coilcraft 55.5 nH, 5 Turn, Coilcraft 33 nH, 5 Turn, Coilcraft Type N Flange Mounts 15 Chip Resistor (0805) 56 , 1/8 W Chip Resistor 10 , 1/8 W Chip Resistor 33 k, 1/8 W Chip Resistor 0.115 x 0.080 Microstrip 0.230 x 0.080 Microstrip 1.034 x 0.080 Microstrip 0.202 x 0.080 Microstrip 0.260 x 0.223 Microstrip 1.088 x 0.080 Microstrip 0.149 x 0.080 Microstrip 0.171 x 0.080 Microstrip 0.095 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 19. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz +&T +&T '0* ',.320#230,*-11? .ION -32.32.-5#05221 +&T 4"" 4?> .DH ',.32 .-5#0 5221 Figure 20. Output Power versus Input Power MOTOROLA WIRELESS RF PRODUCT DEVICE DATA +&T +&T +&T 4"" 4?> .ION -32.32 .-5#0 5221 Figure 21. Input Return Loss versus Output Power MRF1513T1 5.2-67 TYPICAL CHARACTERISTICS, 135 - 175 MHz #AA "0',#$$'!'#,!7 +&T .ION -32.32 .-5#0 5221 +&T +&T 4"" 4?> 4"" 4?> +&T +&T %',? +&T Figure 22. Gain versus Output Power #AA "0',#$$'!'#,!7 .ION -32.32.-5#05221 +&T +&T +&T 4"" 4?> .DH ? G '"/ '1',% !300#,2 G +&T +&T +&T 4"" 4?> .DH ? G '"/ '1',% !300#,2 G Figure 24. Output Power versus Biasing Current Figure 25. Drain Efficiency versus Biasing Current #AA "0',#$$'!'#,!7 .ION -32.32.-5#05221 +&T +&T +&T .DH ? G '"/ G .ION -32.32 .-5#0 5221 Figure 23. Drain Efficiency versus Output Power 4"" 13..*7 4-*2%# 4-*21 Figure 26. Output Power versus Supply Voltage MRF1513T1 5.2-68 +&T +&T .DH ? G '"/ G +&T 4"" 13..*7 4-*2%# 4-*21 Figure 27. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF PRODUCT DEVICE DATA 8DH A +&T A +&T 8DH A +&T 8-* 8-* 8I A +&T 4"" 4 '"/ G .ION 5 Zin 8DH 8-* A +&T 8I A +&T 4"" 4 '"/ G .ION 5 4"" 4 '"/ G .ION 5 f MHz Zin ZOL* f MHz Zin ZOL* f MHz 450 4.64 +j5.82 13.11 +j2.15 400 4.72 +j4.38 12.57 +j1.88 135 16.55 +j1.82 22.01 +j10.32 470 5.42 +j6.34 12.16 +j3.26 440 4.88 +j6.34 11.21 +j5.87 155 15.59 +j5.38 22.03 +j8.07 500 5.96 +j5.45 11.03 +j5.42 470 3.22 +j5.24 9.82 +j8.63 175 15.55 +j9.43 22.08 +j6.85 520 4.28 +j4.94 10.99 +j7.18 = Complex conjugate of source impedance with parallel 15 resistor and 120 pF capacitor in series with gate. (See Figure 1). Zin ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance with parallel 15 resistor and 130 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin Zin ZOL* = Complex conjugate of source impedance with parallel 15 resistor and 130 pF capacitor in series with gate. (See Figure 19). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. 'HJON +<N>CDHB ,@NQILE -ONJON +<N>CDHB ,@NQILE "@PD>@ 3H?@L 2@MN - 68 - " Figure 28. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF PRODUCT DEVICE DATA MRF1513T1 5.2-69 Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 50 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.93 -94 22.09 125 0.044 33 0.77 -81 100 0.81 -131 12.78 101 0.052 6 0.61 -115 200 0.76 -153 6.31 81 0.047 -10 0.59 -135 300 0.76 -160 3.92 69 0.044 -19 0.64 -142 400 0.77 -164 2.74 60 0.040 -26 0.70 -147 500 0.79 -167 1.99 54 0.036 -31 0.75 -151 600 0.80 -169 1.55 48 0.034 -37 0.80 -155 700 0.81 -171 1.25 44 0.028 -40 0.82 -158 800 0.82 -172 1.02 38 0.027 -42 0.86 -161 900 0.83 -173 0.85 35 0.017 -42 0.88 -163 1000 0.84 -175 0.70 29 0.018 -49 0.91 -166 IDQ = 500 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.84 -127 32.57 112 0.025 17 0.64 -130 100 0.80 -152 17.23 97 0.025 13 0.64 -153 200 0.78 -166 8.62 85 0.025 -9 0.65 -163 300 0.78 -171 5.58 79 0.023 -9 0.67 -166 400 0.78 -173 4.08 72 0.022 -9 0.69 -166 500 0.78 -175 3.14 68 0.020 -10 0.71 -167 600 0.79 -176 2.55 63 0.022 -15 0.74 -168 700 0.79 -177 2.14 60 0.019 -20 0.76 -168 800 0.80 -178 1.80 54 0.018 -31 0.79 -170 900 0.81 -178 1.54 51 0.015 -25 0.80 -170 1000 0.82 -179 1.31 46 0.012 -36 0.81 -172 IDQ = 1 A S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.84 -129 32.57 111 0.023 24 0.61 -137 100 0.80 -153 17.04 97 0.024 13 0.64 -156 200 0.78 -167 8.52 85 0.023 5 0.65 -165 300 0.77 -172 5.53 79 0.020 -7 0.67 -167 400 0.77 -174 4.06 73 0.020 -11 0.69 -167 500 0.78 -175 3.13 69 0.021 -9 0.72 -167 600 0.78 -177 2.54 64 0.017 -26 0.74 -168 700 0.78 -177 2.13 60 0.017 -14 0.75 -168 800 0.79 -178 1.81 55 0.015 -23 0.78 -170 900 0.80 -178 1.54 51 0.013 -31 0.79 -170 1000 0.80 -179 1.30 46 0.011 -17 0.80 -172 MRF1513T1 5.2-70 MOTOROLA WIRELESS RF PRODUCT DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. "L<DH !B? %<N@ !?M !DMM !B? !BM !IMM !B? !?M !LMM !B? !BM 1IOL>@ DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MOTOROLA WIRELESS RF PRODUCT DEVICE DATA drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MRF1513T1 5.2-71 MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MRF1513T1 5.2-72 impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA WIRELESS RF PRODUCT DEVICE DATA