RF & Protection Devices
Data Sheet
Revision 1.0, 2013-06-19
BFP843F
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
Edition 2013-06-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP843F
Data Sheet 3 Revision 1.0, 2013-06-19
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
BFP843F, Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
Revision History: 2013-06-19, Revision 1.0
Page Subjects (major changes since last revision)
BFP843F
Table of Contents
Data Sheet 4 Revision 1.0, 2013-06-19
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
8 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
9 Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table of Contents
BFP843F
List of Figures
Data Sheet 5 Revision 1.0, 2013-06-19
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP843F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6-1 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 15
Figure 6-2 DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 6-3 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . 16
Figure 6-4 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 16
Figure 6-5 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 17
Figure 7-1 3rd Order Intercept Point at Output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . 18
Figure 7-2 3rd Order Intercept Point at Output OIP3 [dBm] =f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . 18
Figure 7-3 Compression Point at Output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . 19
Figure 7-4 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 7-5 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 20
Figure 7-6 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 20
Figure 7-7 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 7-8 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . 21
Figure 7-9 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-10 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 8 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-11 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 23
Figure 7-12 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 23
Figure 9-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 9-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 9-3 Marking Description (Marking BFP843F: T2s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 9-4 Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
List of Figures
BFP843F
List of Tables
Data Sheet 6 Revision 1.0, 2013-06-19
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-2 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-3 AC Characteristics, VCE =1.8V, f= 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 5-4 AC Characteristics, VCE =1.8V, f= 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 5-5 AC Characteristics, VCE =1.8V, f= 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-6 AC Characteristics, VCE =1.8V, f= 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-7 AC Characteristics, VCE =1.8V, f= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-8 AC Characteristics, VCE =1.8V, f= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-9 AC Characteristics, VCE =1.8V, f= 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-10 AC Characteristics, VCE =1.8V, f= 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
List of Tables
BFP843F
Product Brief
Data Sheet 7 Revision 1.0, 2013-06-19
1 Product Brief
The BFP843F is a very low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a
broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These
measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high
volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports
voltages up to VCEO = 2.25 V and currents up to IC = 55 mA. The device is especially suited for mobile applications
in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which
enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The
device is housed in an easy to use plastic thin flat package with visible leads.
BFP843F
Features
Data Sheet 8 Revision 1.0, 2013-06-19
2 Features
Applications
As Low Noise Amplifier (LNA) in
• Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE
or WiMAX LNA
• Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage
LNA)
• Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
• ISM bands up to 10 GHz
• Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
• Low noise broadband NPN RF transistor based on Infineon´s
reliable, high volume SiGe:C bipolar technology
• High maximum RF input power and ESD robustness
20 dBm maximum RF input power, 1.5 KV HBM ESD hardness
• Unique combination of high RF performance, robustness and
ease of application circuit design
• Low noise figure: NFmin = 0.95 dB at 2.4 GHz
and 1.1 dB at 5.5 GHz, 1.8 V, 8 mA
• High gain |S21|2 = 21.5 dB at 2.4 GHz
and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA
•OIP3 = 22.5 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 15 mA
• Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
(2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
• Low power consumption, ideal for mobile applications
• Thin small flat Pb-free (RoHS compliant) and halogen-free
package with visible leads
• Qualification report according to AEC-Q101 available
Product Name Package Pin Configuration Marking
BFP843F TSFP-4-1 1 = B 2 = E 3 = C 4 = E T2s
BFP843F
Maximum Ratings
Data Sheet 9 Revision 1.0, 2013-06-19
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO –2.25
2.0
VTA = 25 °C
TA = -55 °C
Open base
Collector emitter voltage1)
1) VCES is identical to VCEO due to design
VCES –2.25
2.0
VTA = 25 °C
TA = -55 °C
E-B short circuited
Collector base voltage2)
2) VCBO is similar to VCEO due to design
VCBO –2.9
2.6
VTA =25 °C
TA = -55 °C
Open emitter
Base current IB-5 5 mA
Collector current IC–55mA
RF input power PRFin –20dBm
ESD stress pulse VESD -1.5 1.5 kV HBM, all pins, acc. to
JESD22-A114
Total power dissipation3)
3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot –125mWTS ≤ 101 °C
Junction temperature TJ–150°C
Storage temperature TStg -55 150 °C
BFP843F
Thermal Characteristics
Data Sheet 10 Revision 1.0, 2013-06-19
4 Thermal Characteristics
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Table 4-1 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation).
RthJS –395–K/W–
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
90
100
110
120
130
TS [°C]
Ptot [mW]
BFP843F
Electrical Characteristics
Data Sheet 11 Revision 1.0, 2013-06-19
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 V IC = 1 mA, IB = 0
Open base
Collector emitter leakage current ICES ––400nAVCE = 1.5 V, VBE = 0
E-B short circuited
Collector base leakage current ICBO ––400nAVCB = 1.5 V, IE = 0
Open emitter
Emitter base leakage current IEBO ––10μAVEB = 0.5 V, IC = 0
Open collector
DC current gain hFE 150 260 450 VCE = 1.8 V, IC = 15 mA
Pulse measured
Table 5-2 General AC Characteristics at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector base capacitance1)
1) Including integrated feedback capacitance
CCB –5.23
0.06
–pFf = 1 MHz
f = 1 GHz
VCB = 1.8 V, VBE = 0
Emitter grounded
Collector emitter capacitance CCE –0.46–pFf = 1 MHz
VCE = 1.8 V, VBE= 0
Base grounded
Emitter base capacitance CEB –0.70–pFf = 1 MHz
VEB = 0.4 V,VCB = 0
Collector grounded
BFP843F
Electrical Characteristics
Data Sheet 12 Revision 1.0, 2013-06-19
5.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 5-1 BFP843F Testing Circuit
Table 5-3 AC Characteristics, VCE =1.8V, f= 450 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
25
24.5
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.8
22.5
–
–
dB IC=8mA
IC=8mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
7
24.5
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 5-4 AC Characteristics, VCE =1.8V, f= 900 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
24.5
24
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.8
22
–
–
dB IC=8mA
IC=8mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
8
24
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
OUT
IN
Bias -T
Bias-T
B
(Pin 1)
EC
E
VC
Top View
VB
BFP843F
Electrical Characteristics
Data Sheet 13 Revision 1.0, 2013-06-19
Table 5-5 AC Characteristics, VCE =1.8V, f= 1.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
24
23
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.85
21
–
–
dB IC=8mA
IC=8mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
7
23
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 5-6 AC Characteristics, VCE =1.8V, f= 1.9 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
23.5
22.5
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.9
20.5
–
–
dB IC=8mA
IC=8mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
7.5
23.5
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 5-7 AC Characteristics, VCE =1.8V, f= 2.4 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
22.5
21.5
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.95
20
–
–
dB IC=8mA
IC=8mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
6.5
22.5
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
BFP843F
Electrical Characteristics
Data Sheet 14 Revision 1.0, 2013-06-19
Note:OIP3 value depends on termination of all intermo dulation frequency components. Termination use d for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Table 5-8 AC Characteristics, VCE =1.8V, f= 3.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
21
19.5
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.0
18
–
–
dB IC=8mA
IC=8mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
6
22
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 5-9 AC Characteristics, VCE =1.8V, f= 5.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
18
16.5
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.1
15.5
–
–
dB IC=8mA
IC=8mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
4.5
19.5
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
Table 5-10 AC Characteristics, VCE =1.8V, f= 10 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
13.5
10
–
–
dB IC=15mA
IC=15mA
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
1.7
10
–
–
dB IC=8mA
IC=8mA
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3 –
–
0.5
16.5
–
–
dBm ZS=ZL=50Ω
IC=15mA
IC=15mA
BFP843F
Characteristic DC Diagrams
Data Sheet 15 Revision 1.0, 2013-06-19
6 Characteristic DC Diagrams
Figure 6-1 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
Figure 6-2 DC Current Gain hFE = f (IC), VCE = 1.8 V
0 0.5 1 1.5 2 2.5
0
2
4
6
8
10
12
14
16
18
20
22
VCE [V]
IC [mA]
10µA
20µA
30µA
40µA
50µA
60µA
70µA
80µA
10−2 10−1 100101102
102
103
Ic [mA]
hFE
BFP843F
Characteristic DC Diagrams
Data Sheet 16 Revision 1.0, 2013-06-19
Figure 6-3 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V
Figure 6-4 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
10−5
10−4
10−3
10−2
10−1
100
101
102
VBE [V]
IC [mA]
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
10−7
10−6
10−5
10−4
10−3
10−2
10−1
100
VBE [V]
IB [mA]
BFP843F
Characteristic DC Diagrams
Data Sheet 17 Revision 1.0, 2013-06-19
Figure 6-5 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V
0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
10−11
10−10
10−9
10−8
10−7
10−6
VEB [V]
IB [A]
BFP843F
Characteristic AC Diagrams
Data Sheet 18 Revision 1.0, 2013-06-19
7 Characteristic AC Diagrams
Figure 7-1 3rd Order Intercept Point at Output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters
Figure 7-2 3rd Order Intercept Point at Output OIP3 [dBm] =f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
0 5 10 15 20 25 30 35
0
2
4
6
8
10
12
14
16
18
20
22
24
IC [mA]
OIP3 [dBm]
1.5V, 2400MHz
1.8V, 2400MHz
1.5V, 5500MHz
1.8V, 5500MHz
456
7
8
9
9
10
10
11
11
12
12
12
12
12
13
13
13
13
13
14
14
14
14
14
15
15
15
15
15
16
16
16
16
16
16
17
17
17
17
17
17
17
18
18
18
18
18
18
18
19
19
19
19
19
19
19
20
20
20
20
20
20
20
21
21
VCE [V]
IC [mA]
1 1.2 1.4 1.6 1.8 2
5
10
15
20
25
30
35
BFP843F
Characteristic AC Diagrams
Data Sheet 19 Revision 1.0, 2013-06-19
Figure 7-3 Compression Point at Output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
Figure 7-4 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 15 mA
−6
−5
−5
−5
−4
−4
−4
−4
−3
−3
−3
−3
−2
−2
−2
−2
−
1
−
1
−1
−1
0
0
0
0
1
1
1
1
1
2
2
2
2
2
33
3
3
3
3
4
4
4
4
4
5
5
5
5
6
6
6
6
7
7
VCE [V]
IC [mA]
1 1.2 1.4 1.6 1.8 2
5
10
15
20
25
30
35
0 1 2 3 4 5 6 7 8 9 10 11 12
0
2
4
6
8
10
12
14
16
18
20
22
24
26
f [GHz]
G [dB]
Gma
|S21|2
BFP843F
Characteristic AC Diagrams
Data Sheet 20 Revision 1.0, 2013-06-19
Figure 7-5 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz
Figure 7-6 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
IC [mA]
Gmax [dB]
12.00GHz
10.00GHz
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0 0.5 1 1.5 2 2.5
10
12
14
16
18
20
22
24
26
28
VCE [V]
Gmax [dB]
12.00GHz
10.00GHz
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
BFP843F
Characteristic AC Diagrams
Data Sheet 21 Revision 1.0, 2013-06-19
Figure 7-7 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 8 / 15 mA
Figure 7-8 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 8 / 15 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03
0.03 to 12 GHz
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
0.03
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
8.0mA
15mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.45 to 10 GHz0.45 to 10 GHz
0.45
0.9
1.9
2.4
3.5
5.5
10.0
0.45
5.5
10.0
8mA
15mA
BFP843F
Characteristic AC Diagrams
Data Sheet 22 Revision 1.0, 2013-06-19
Figure 7-9 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 8 / 15 mA
Figure 7-10 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 8 / 15 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 12 GHz
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
0.03
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
0.03
8.0mA
15mA
0 1 2 3 4 5 6 7 8 9 10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
f [GHz]
NFmin [dB]
IC = 8mA
IC = 15mA
BFP843F
Characteristic AC Diagrams
Data Sheet 23 Revision 1.0, 2013-06-19
Figure 7-11 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz
Figure 7-12 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz
Note:The curves shown in this chapter have been g enerated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA=25°C.
0 5 10 15 20 25
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
IC [mA]
NFmin [dB]
f = 0.9GHz
f = 2.4GHz
f = 3.5GHz
f = 5.5GHz
f = 10GHz
0 5 10 15 20 25
0
0.5
1
1.5
2
2.5
3
3.5
4
IC [mA]
NF50 [dB]
f = 0.9GHz
f = 2.4GHz
f = 3.5GHz
f = 5.5GHz
f = 10GHz
BFP843F
Simulation Data
Data Sheet 24 Revision 1.0, 2013-06-19
8 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP843F SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP843F SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
BFP843F
Package Information TSFP-4-1
Data Sheet 25 Revision 1.0, 2013-06-19
9 Package Information TSFP-4-1
Figure 9-1 Package Outline
Figure 9-2 Package Footprint
Figure 9-3 Marking Description (Marking BFP843F: T2s)
Figure 9-4 Tape dimensions
10° MAX.
±0.05
0.2
±0.05
1.4
12
±0.05
0.8
1.2 ±0.05
±0.04
0.55
±0.05
0.2
±0.05
0.15
±0.05
0.2
0.5
±0.05
0.5
±0.05
43
TSFP-4-1, -2-PO V04
0.35
0.45
0.9
0.5 0.5
TSFP-4-1, -2-FP V04
TSFP-4-1, -2-TP V05
40.2
1.4
8
Pin 1 1.55 0.7
