RB521S-30
Taiwan Semiconductor
1 Version: C1804
200mA, 30V Low VF SMD Schottky Barrier Diode
FEATURES
● Low capacitance
● Low forward voltage drop
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Adapters
● For switching power supply
● Low stored charge
● Inverter
MECHANICAL DATA
● Case: SOD-523F
● Molding compound meets UL 94 V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 1.68 ± 0.5 mg
KEY PARAMETERS
PARAMETER VALUE UNIT
IF 200 mA
VRRM 30 V
IFSM 1 A
VF at IF=200mA 0.5 V
TJ Max. 125 °C
Package SOD-523F
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
RB521S-30
UNIT
Marking code on the device C
Power dissipation PD 200 mW
Repetitive peak reverse voltage VRRM 30 V
Forward current IF 200 mA
Non-repetitive peak forward surge current @ t = 8.3ms IFSM 1 A
Junction temperature range TJ -55 to +125 °C
Storage temperature range TSTG -55 to +125 °C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 500 °C/W
RB521S-30
Taiwan Semiconductor
2 Version: C1804
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN MAX UNIT
Forward voltage per diode (1) IF = 200mA, TJ = 25°C VF - 0.5 V
Reverse breakdown voltage IR = 500 μA, TJ = 25°C V(BR) 30 - V
Reverse leakage current (2) VR=10V, TJ = 25°C IR - 30 μA
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO. PACKAGE PACKING
RB521S-30 RKG SOD-523F 3K / 7" Reel
RB521S-30 RK SOD-523F 3K / 7" Reel
RB521S-30
Taiwan Semiconductor
3 Version: C1804
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Forward Characteristics Fig. 2 Reverse Characteristics
Fig. 3 Total Capacitance
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0.0 0.1 0.2 0.3 0.4 0.5 0.6
IF, Forward Current (A)
VF, Forward Voltage (V)
TA=125°C
TA=75°C
TA=25°C
TA=-25°C
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
0 5 10 15 20 25 30
IR, Reverse Current (A)
VR, Reverse Voltage (V)
°
T
A
=75°C
TA=25°
TA= -25°C
0
5
10
15
20
25
30
0 2 4 6 8 10
Capacitance Between Teerminals : CT(pF)
Reverse Voltage : VR(V)
TA=25oC
f=1MHz
RB521S-30
Taiwan Semiconductor
4 Version: C1804
PACKAGE OUTLINE DIMENSION
SOD-523F
SUGGEST PAD LAYOUT
DIM.
Unit (mm) Unit (inch)
Min Max Min Max
A 0.70 0.90 0.028 0.035
B 1.50 1.70 0.059 0.067
C 0.25 0.40 0.010 0.016
D 1.10 1.30 0.043 0.051
E 0.50 0.77 0.020 0.030
F 0.07 0.20 0.003 0.008
DIM.
Unit (mm) Unit (inch)
Typ. Typ.
X 0.60 0.024
X1 2.30 0.091
Y 0.80 0.031
RB521S-30
Taiwan Semiconductor
5 Version: C1804
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.