Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
65 90
85 125
RθJL 43 60
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
±8Gate-Source Voltage
Drain-Source Voltage -20
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
-3.5
-30
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
1.4
0.9
-55 to 150
TA=70°C
ID
-4.0
AO3415
P-Channel Enhancement Mode Field Effect Transistor
Rev 3: May 2004
Features
VDS (V) = -20V
ID = -4 A
RDS(ON) < 43mΩ (VGS = -4.5V)
RDS(ON) < 54mΩ (VGS = -2.5V)
RDS(ON) < 73mΩ (VGS = -1.8V)
ESD Rating: 3000V HBM
General Description
The AO3415 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AO3415 is Pb-free
(meets ROHS & Sony 259 specifications). AO3415L
is a Green Product ordering option. AO3415 and
A
O3415L are electrically identical.
D
S
G
S
GD
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.
AO3415, AO3415L
Symbol Min Typ Max Units
BVDSS -20 V
-1
TJ=55°C -5
±1
µ
A
±10
µ
A
VGS(th) -0.3 -0.55 -1
ID(ON) -25 A
35 43
TJ=125°C 48 60
45 54 m
Ω
56 73 m
Ω
gFS 816 S
VSD -0.78 -1 V
IS-2.2 A
Ciss 1450 pF
Coss 205 pF
Crss 160 pF
Rg6.5 Ω
Qg17.2 nC
Qgs 1.3 nC
Qgd 4.5 nC
tD(on) 9.5 ns
tr17 ns
tD(off) 94 ns
tf35 ns
trr 31 ns
Qrr 13.8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-1.8V, ID=-2A
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-4A
Reverse Transfer Capacitance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-16V, VGS=0V
VDS=0V, VGS=±8V
Zero Gate Voltage Drain Current
VDS=0V, VGS=±4.5V
IGSS
mΩ
VGS=-2.5V, ID=-4A
IS=-1A,VGS=0V
VDS=-5V, ID=-4A
IF=-4A, dI/dt=100A/µs
VGS=0V, VDS=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-10V, ID=-4A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=2.5Ω,
RGEN=3Ω
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Gate-Body leakage current
Gate resistance VGS=0V, VDS=0V, f=1MHz
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO3415, AO3415L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-1.5V
-2.0V
-2.5V
-4.5V
-8V
-3.0V
0
2
4
6
8
10
0 0.5 1 1.5 2
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
20
40
60
80
0246810
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
ID=-4A, VGS=-2.5V
ID=-2A, VGS=-1.8V
ID=-4A, VGS=-4.5V
20
30
40
50
60
70
80
90
100
02468
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
ID=-4A
25°C
125°C
25°C
125°C
VDS=-5V
VGS=-1.8V
VGS=-2.5V
VGS=-4.5V
Alpha & Omega Semiconductor, Ltd.
AO3415, AO3415L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 5 10 15 20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
400
800
1200
1600
2000
2400
0 5 10 15 20
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
Coss
Crss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power ( W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100µs
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C 10µs
VDS=-10V
ID=-4A
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.
