IR6224
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Symbol Parameter Min. Max. Units Test Conditions
Vcc Supply voltage permanent -0.3 35
reverse -16 — VFor 10 seconds, (1)
Voffset Logic to power ground offset Vcc -50 Vcc +0.3
Vin Input voltage -0.3 30
Iin Input current — 10 mA
Vout Output voltage Vcc -50 Vcc +0.3 V
Iout Output current — self-limited A
Vdg Diagnostic output voltage -0.3 30 V
Idg Diagnostic output current — 10 mA
Eav Repetitive avalanche energy — 200 mJ I = 2A (2)
ESD1 Electrostatic discharge (Human Body Model) — 4000 V C = 100 pF,R = 1500Ω
ESD2 Electrostatic discharge (Machine Model) — 1000 V C = 200 pF, R = 0Ω
PDPower dissipation — 28 W Tcase= 25oC
TJop Operating junction temperature range -40 150
TStg Storage temperature range -40 150 oC
TLLead temperature (soldering, 10 seconds) — 300
NOTES: (1) with 15kΩ resistors in input and diagnostic
(2) maximum frequency depends on heatsink (rectangular waveform)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
(TC = 25oC unless otherwise specified.)
Symbol Parameter Min. Typ. Max. Units T est Conditions
Vccop Operating Voltage Range 5 — 50 V
Iccoff Sleep Mode Supply Current — 40 — µAV
cc=24V, Vin= 0V
Iccon Supply Current (Average) — 3 — mA Vin = 5V
Iccac Supply Current (AC RMS) — 20 — µAV
in = 5V
Vih High Level Input Threshold Voltage — 2 2.5 V
Vil Low Level Input Threshold Voltage 1 1.8 —
Ilon On-State Input Current 10 — 70 Vin = 3.5V
Iloff Off-State Input Current 1 — 30 µAVin = 0.4V
Ioh Output Leakage Current — 20 — Vout = 6V
Iol Output Leakage Current 0 — 10 Vout = 0V
Vdgl Low Level Diagnostic Output Voltage — 0.3 — V Idg = 1.6mA
Idgh Diagnostic Output Leakage Current 0 — 10 µAV
dg = 5V
RDS(on) On-State Resistance — 80 100 mΩIout = 1A
— 120 — Vcc = 5V, Iout = 1A
Static Electrical Characteristics
(TC= 25°C unless otherwise specified.)