RB721Q-40
Diodes
Rev.B 1/3
Schottky barrier diode
RB721Q-40
zApplications
Low current rectification
zFeatures
1) Glass sealed envelope. (MSD)
2) Low V
F,
Low I
R
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
JEDEC : DO-34
ROHM : MSD
29±1 29±1
2.7±0.3
φ0.4±0.1
φ1.8±0.2
CATHODE BAND (BLACK) TYPE NO. (BLACK)
S
2
-
zTaping specification s (Unit : mm)
A
H2
E
B
C
L2L1
F D
H1
BLUE BROWN
T-72 52.4±1.5
T-72 5.0±0.5
T-77 5.0±0.3
T-72
T-77
T-72
T-77
T-72 1/2A±1.2
T-77 1/2A±0.4
T-72 0.7 max.
T-77 0.2 max.
T-72
T-77
T-72
T-77
T-72 1.5 max.
T-77 0.4 max.
＊H1(6mm)：BROWN
Ａ
Symbol Standard dimension
value(mm)
B
C
D
1.0 max.
0
|L1-L2|
H1 6.0±0.5
H2 5.0±0.5
E
Ｆ
T-77 26.0 +0.4
0
zAbsolute maximum ratings (Ta = 25°C)
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forw
F
Junction temperature
Storage temperature
Symbol Unit
VRM V
VRV
Io mA
IFSM mA
Tj ℃
Tstg ℃
Parameter
ard current
Limits
40
30
40
orward current surge peak （60Hz・1cyc）200
125
-40 to +125
zElectrical characteristics (Ta = 25°C)
Symbol Min. Typ. Max. Unit
orward voltage VF- - 0.37 V IF=1mA
IR--0.5µA
VR=25V
Ct - 2.0 - pF VR=1V , f=1MHz
Conditions
een terminals
Parameter
F
Capacitance betw
Reverse current
RB721Q-40
Diodes
Rev.B 2/3
zElectrical characteristic curves
URGE
PEAK S
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700 800
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
0.1
1
10
100
1000
10000
100000
0 10203040
Ta=-25℃
Ta=125℃
Ta=25℃
Ta=75℃
0.1
1
10
0102030
f=1MHz
280
290
300
310
320
330
AVE:310.7mV
Ta=25℃
IF=1mA
n=30pcs
0
50
100
150
200
250
300
Ta=25℃
VR=25V
n=30pcs
AVE:54.0nA
0
1
2
3
4
5
6
7
8
9
10
AVE:2.07pF
Ta=25℃
f=1MHz
VR=1V
n=10pcs
0
5
10
15
20
AVE:5.60A
8.3ms
Ifsm 1cyc
0
5
10
110100
8.3ms
Ifsm
1cyc
8.3ms
0
2
4
6
8
10
1 10 100
t
Ifsm
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
Rth(j-l)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
0
0.01
0.02
0.03
0.04
0.05
0 0.01 0.02 0.03 0.04 0.05
DC
D=1/2
Sin(θ＝180)
0
0.001
0.002
0.003
0.004
0.005
0 10203040
Sin(θ＝180)
DC
D=1/2
RB721Q-40
Diodes
Rev.B 3/3
IED
CTIF
E RE
ERAG
AV
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
TTj=125℃
D=t/T
tVR
Io
VR=20V
0A
0V
Sin(θ＝180)
DC
D=1/2
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
TTj=125℃
D=t/T
tVR
Io
VR=20
V
0A
0V
Sin(θ＝180)
DC
D=1/2
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
