2007-03-28
1
SMBT3904...PN
NPN / PNP Silicon Switching Transistor Array
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN / PNP
transistor in one package
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
SMBT3904PN
SMBT3904UPN
EHA07177
654
321
C1 B2 E2
C2B1E1
TR1 TR2
Type Marking Pin Configuration Package
SMBT3904PN
SMBT3904UPN s3P
s3P 1=E
1=E 2=B
2=B 3=C
3=C 4=E
4=E 5=B
5=B 6=C
6=C SOT363
SC74
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V
Collector-base voltage VCBO 40
Emitter-base voltage VEBO 6
Collector current IC200 mA
Total power dissipation-
TS ≤ 115 °C, SMBT3904PN
TS ≤ 105 °C, SMBT3904UPN
Ptot
250
330
mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
1Pb-containing package may be available upon special request
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2007-03-28
2
SMBT3904...PN
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
SMBT3904PN
SMBT3904UPN
RthJS
≤ 140
≤ 135
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 40 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 V(BR)CBO 40 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 6 - -
Collector-base cutoff current
VCB = 30 V, IE = 0 ICBO - - 50 nA
DC current gain2)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
40
70
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
-
-
-
-
0.25
0.4
V
Base emitter saturation voltage2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
0.65
-
-
-
0.85
0.95
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
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SMBT3904...PN
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz fT250 - - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - - 3.5 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - - 10
Delay time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
td- - 35 ns
Rise time
VCC = 3 V, IC = 10 mA, IB1 = 1 mA,
VBE(off) = 0.5 V
tr- - 35
Storage time
VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA tstg - - 225
Fall time
VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA tf- - 75
Noise figure
IC = 100 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 1 kΩ
F- - 5 dB
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4
SMBT3904...PN
DC current gain hFE = ƒ(IC)
VCE = 10 V, normalized
EHP00765
10
10 mA
h
C
5
FE
10
1
0
10
-1
5
10 10 10
-1 0 1 2
Ι
125 C
25 C
-55 C
55 2
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
EHP00756
2
0V
BE sat
C
101
100
5
Ι
V
mA
0.2 0.4 0.6 0.8 1.0 1.2
CE sat
V,
5
102
VBE
VCE
Total power dissipation Ptot = ƒ(TS)
SMBT3904PN
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Total power dissipation Ptot = ƒ(TS)
SMBT3904UPN
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
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5
SMBT3904...PN
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
SMBT3904PN
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = ƒ(tp)
SMBT3904PN
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
SMBT3904UPN
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
Ptotmax /PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
SMBT3904UPN
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
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SMBT3904...PN
Delay time td = ƒ(IC)
Rise time tr = ƒ(IC)
EHP00761
10 mA
t
C
r
101
10010 10
01 2
Ι
55
ns
r
t
td
,
3
10
d
t
102
103
= 3 V
CC
V
0 V
V= 2 V
BE
40 V
15 V
hFE = 10
Storage time tstg = ƒ(IC)
EHP00762
10 mA
t
C
s
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
h
FE
= 20
10
25 C
125 C
10
= 20
FE
h
Fall time tf = ƒ(IC)
EHP00763
10 mA
t
C
f
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
h
FE
= 20
25 C
125 C
CC
V= 40 V
= 10
FE
h
Rise time tr = ƒ(IC)
EHP00764
10 mA
t
C
r
10
1
10
0
10 10
01 2
Ι
55
ns
3
10
10
2
10
3
25 C
125 C
CC
V= 40 V
= 10
FE
h
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2007-03-28
7
SMBT3904...PN
Package SC74
Package Outline
Foot Print
Standard Packing
0.5
0.95
1.9
2.9
546
321
1.1 MAX.
(0.35)
(2.25)
±0.2
2.9 B
0.2
+0.1
-0.05
0.35
Pin 1
marking
M
B6x
0.95
1.9
0.15
-0.06
+0.1
1.6
10˚ MAX.
A
±0.1
2.5
0.25
10˚ MAX.
±0.1
±0.1
A0.2
M
0.1 MAX.
2.7
4
3.15
Pin 1
marking
8
0.2
1.15
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Manufacturer
2005, June
Date code (Year/Month)
BCW66H
Type code
Pin 1 marking
Laser marking
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
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2007-03-28
8
SMBT3904...PN
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15 1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9
±0.1
A
-0.05
6x 0.1
M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
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2007-03-28
9
SMBT3904...PN
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
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