DM2G100SH12AL May. 2009 High Power SPT+ & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN'S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 6 7 Features 5 High Speed Switching BVCES = 1200V Low Conduction Loss : VCE(sat) = 1.8 V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10uS at TC=100 Reduced EMI and RFI Isolation Type Package 4 Package : 7DM-3 Series Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 1200 V VGES Gate-Emitter Voltage - 20 V IC Collector Current TC = 25 150 A TC = 80 100 A - 200 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current TC = 100 75 A IFM Diode Maximum Forward Current - 150 A TSC Short Circuit Withstand Time TC = 100 10 uS PD Maximum Power Dissipation TC = 25 700 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V Mounting screw Torque :M6 - 4.0 N.m Power terminals screw Torque :M6 - 4.0 N.m Note : (1) Repetitive rating : Pulse width limited by max. junction temperature Copyright@Dawin Electronics Corp. All right reserved 1/6 DM2G100SH12AL May. 2009 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Symbol Parameter Conditions BVCES C - E Breakdown Voltage VGE = 0V , IC = 1.0mA BVCES/ Temperature Coeff. of TJ Breakdown Voltage VGE(th) Values Unit Typ. Max. 1200 - - V VGE = 0V , IC = 1mA - 0.6 - V/ G - E threshold voltage IC =2.0mA , VCE = VGE 5 - 8 V ICES Collector cutoff Current VCE = 1200V , VGE = 0V - - 1.0 mA IGES G - E leakage Current VGE =20V - - 200 nA VCE(sat) Collector to Emitter IC=100A, VGE=15V @TC= 25 - 1.8 2.5 V saturation voltage IC=100A, VGE=15V @TC=100 - 2.0 - V Cies Input capacitance VGE = 0V , f = 1 - 7.43 - nF Coes Output capacitance VCE = 25V - 0.52 - nF Cres Reverse transfer capacitance - 0.34 - nF td(on) Turn on delay time VCC = 600V , IC = 100A - 125 - nS Turn on rise time VGE = 15V - 60 - nS Turn off delay time RG = 6.8 - 420 - nS Turn off fall time Inductive Load - 60 - nS tr td(off) tf Min. Eon Turn on Switching Loss - 8.6 - mJ Eoff Turn off Switching Loss - 6.8 - mJ Ets Total Switching Loss - 15.4 - mJ Tsc Short Circuit Withstand Time 10 - - uS VCC = 600V, VGE = 15V RG =6.8 @TC = 100 Qg Total Gate Charge VCC = 600V - 1050 - nC Qge Gate-Emitter Charge VGE = 15V - 90 - nC Qgc Gate-Collector Charge IC = 100A - 450 - nC Copyright@Dawin Electronics Corp. All right reserved 2/6 DM2G100SH12AL May. 2009 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol VFM trr Irr Qrr Parameter Values Conditions Diode Forward Voltage IF =100A Min. Typ. Max. Tc =25 - 1.8 2.0 Tc =100 - 1.9 - Diode Reverse IF =100A, VR =600V Tc =25 - 140 - Recovery Time di/dt = -200A/uS Tc =100 - 155 - Diode Peak Reverse Tc =25 - 35 - Recovery Current Tc =100 - 48 - Diode Reverse Tc =25 - 2300 - Recovery Charge Tc =100 - 8900 - Unit V nS A nC Thermal Characteristics and Weight Symbol Parameter Conditions Values Min. Typ. Max. Unit RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.155 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.4 /W RCS Case-to-Sink ( Conductive grease applied) 0.05 - - /W Weight Weight of Module - - 360 g Copyright@Dawin Electronics Corp. All right reserved 3/6 DM2G100SH12AL May. 2009 Performance Curves 175 Common Emitter TC=25 20V 12V 15V Collector Current, IC [A] Collector Current, IC [A] 250 200 150 100 10V 15V 12V 125 100 10V 75 50 VGE=8V 25 0 0 0 2 4 0 6 2 4 6 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output characteristics Fig 2. Typical Output characteristics 120 250 TC=25 100 200 TC=125 Load Current [A] Collector Current, IC [A] 20V 50 VGE=8V 150 100 50 80 60 40 Duty cycle = 50% TC=125 Power Dissipation = 130W 20 0 0 0 1 2 3 4 0.1 5 1 10 100 Collector - Emitter Voltage, VCE [V] Frequency [KHz] Fig 3. Typical Saturation Voltage characteristics Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC=25 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Common Emitter TC=125 150 16 12 8 200A 4 100A IC=50A 0 0 4 8 12 16 20 Common Emitter TC=125 16 12 8 200A 4 100A IC=50A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Typical Saturation Voltage vs. VGE Fig 6. Typical Saturation Voltage vs. VGE Copyright@Dawin Electronics Corp. All right reserved 4/6 20 DM2G100SH12AL May. 2009 10 20 Gate - Emitter Voltage, VGE [V] Capacitance [nF] Cies Coes 1 Cres Common Emitter VGE=0V, f=1MHZ TC=25 0.1 Common Emitter VCE=600V, IC=100A TC=25 VCC=800V 15 10 5 0 0 5 10 15 20 25 30 35 0 0.1 0.2 0.3 Collector - Emitter Voltage, VCE [V] 0.4 0.6 750 TJ = 150 VGE 15V 0.8 0.9 1 TJ 150 PD = f(Tc) 600 PD [ W ] 120 0.7 Fig 8. Gate Charge characteristics 150 90 60 30 450 300 150 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 Tc [ ] 100 120 140 160 Fig 10. Power Dissipation vs. Case Temperature 1 Forward Current, IF [A] 250 0.1 0.01 0.001 1.E-05 80 Tc [ ] Fig 9. rated Current vs. Case Temperature Thermal Response Zthjc [ /W] 0.5 Gate Charge, Qg [nC] Fig 7. Capacitance characteristics Ic [ A ] VCC=600V IGBT : DIODE : TC=25 1.E-04 1.E-03 1.E-02 1.E-01 200 150 100 TC=125 TC=25 50 0 0 1.E+00 Rectangular Pulse Duration Time [sec] 1 2 3 Forward Drop Voltage, VF [V] Fig 11. Transient Thermal Impedance Fig 12. Forward characteristics Copyright@Dawin Electronics Corp. All right reserved 5/6 4 May. 2009 Package Out Line Information 7DM-3 Copyright@Dawin Electronics Corp. All right reserved 6/6 DM2G100SH12AL