Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G100SH12AL
Description
DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and
switching noise in high frequency power conditioning electrical systems.
These IGBT modules are ideally suited for power inverters, motors drives
and other applications where switching losses are significant portion of the
total losses.
Features
☞ High Speed Switching
☞ BVCES = 1200V
☞ Low Conduction Loss : VCE(sat) = 1.8 V (typ.)
☞ Fast & Soft Anti-Parallel FWD
☞ Short circuit rated : Min. 10uS at TC=100℃
☞ Reduced EMI and RFI
☞ Isolation Type Package
Applications
Motor Drives, High Power Inverters, Welding Machine,
Induction Heating, UPS , CVCF, Robotics , Servo Controls
Absolute Maximum Ratings @ Tj=25℃(Per Leg)
Symbol Parameter Ratings Unit Conditions
Equivalent Circuit
Equivalent Circuit and Package
Package : 7DM-3 Series
Please see the package out line information
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Mounting screw Torque :M6
Power terminals screw Torque :M6
1200
±20
150
100
200
75
150
10
700
-40 ~ 150
-40 ~ 125
2500
4.0
4.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
N.m
N.m
-
-
TC = 25℃
TC = 80℃
-
TC = 100℃
-
TC = 100℃
TC = 25℃
-
-
AC 1 minute
-
-
6
7
5
4
① ② ③
High Power SPT+ & Rugged Type IGBT Module
1/6
Note : (1) Repetitive rating : Pulse width limited by max. junction temperature
Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G100SH12AL
Electrical Characteristics of IGBT @ TC=25℃ (unless otherwise specified)
Symbol Parameter
Values
Unit
Conditions
Min. Typ. Max.
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
1200
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
-
-
-
1.8
2.0
7.43
0.52
0.34
125
60
420
60
8.6
6.8
15.4
-
1050
90
450
-
-
8
1.0
±200
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V/℃
V
mA
nA
V
V
nF
nF
nF
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC = 1.0mA
VGE = 0V , IC = 1mA
IC =2.0mA , VCE = VGE
VCE = 1200V , VGE = 0V
VGE =±20V
IC=100A, VGE=15V @TC= 25℃
IC=100A, VGE=15V @TC=100℃
VGE = 0V , f = 1㎒
VCE = 25V
VCC = 600V , IC = 100A
VGE = ±15V
RG = 6.8Ω
Inductive Load
VCC = 600V, VGE = ±15V
RG =6.8Ω @TC = 100℃
VCC = 600V
VGE =± 15V
IC = 100A
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
2/6
Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G100SH12AL
Electrical Characteristics of FRD @ TC=25℃ (unless otherwise specified)
Symbol Parameter
Values
Unit Conditions
Min. Typ. Max.
Diode Forward Voltage
Diode Reverse
Recovery Time
Diode Peak Reverse
Recovery Current
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
Thermal Characteristics and Weight
Symbol Parameter
Values
Unit Conditions
Min. Typ. Max.
Junction-to-Case(IGBT Part, Per 1/2 Module)
Junction-to-Case(DIODE Part, Per 1/2 Module)
Case-to-Sink ( Conductive grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.155
0.4
-
360
-
-
0.05
-
RθJC
RθJC
RθCS
Weight
IF =100A
IF =100A, VR =600V
di/dt = -200A/uS
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
-
-
-
-
-
-
-
-
1.8
1.9
140
155
35
48
2300
8900
2.0
-
-
-
-
-
-
-
V
nS
A
nC
3/6
Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G100SH12AL
0
4
8
12
16
20
04812 16 20
0
4
8
12
16
20
0 4 8 12 16 20
0
50
100
150
200
250
0 1 2 3 4 5
0
25
50
75
100
125
150
175
0 2 4 6
0
50
100
150
200
250
0 2 4 6
Performance Curves
20V 15V 12V
10V
VGE=8V
Common Emitter
TC=25℃ 20V 15V 12V
10V
Common Emitter
TC=125℃
TC=125℃
TC=25℃
0
20
40
60
80
100
120
0.1 1 10 100
Duty cycle = 50%
TC=125℃
Power Dissipation = 130W
Common Emitter
TC=25℃
200A
100A
IC=50A
Common Emitter
TC=125℃
200A
100A
IC=50A
VGE=8V
Collector – Emitter Voltage, VCE [V]
Collector Current, IC [A]
Collector – Emitter Voltage, VCE [V]
Collector Current, IC [A]
Collector – Emitter Voltage, VCE [V]
Collector Current, IC [A]
Gate – Emitter Voltage, VGE [V]
Collector – Emitter Voltage, VCE [V]
Collector – Emitter Voltage, VCE [V]
Gate – Emitter Voltage, VGE [V]
Frequency [KHz]
Load Current [A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltage characteristics Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
4/6
Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G100SH12AL
0.001
0.01
0.1
1
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
0
5
10
15
20
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
0.1
1
10
0 5 10 15 20 25 30 35
Collector – Emitter Voltage, VCE [V]
Capacitance [nF]
Common Emitter
VGE=0V, f=1MHZ
TC=25℃
Cies
Coes
Cres
Gate Charge, Qg [nC]
Gate – Emitter Voltage, VGE [V]
Common Emitter
VCE=600V, IC=100A
TC=25℃
Rectangular Pulse Duration Time [sec]
Thermal Response Zthjc [ /W]
℃
IGBT :
DIODE :
TC=25℃
Forward Current, IF [A]
Fig 7. Capacitance characteristics Fig 8. Gate Charge characteristics
Fig 11. Transient Thermal Impedance Fig 12. Forward characteristics
VCC=600V
VCC=800V
Fig 9. rated Current vs. Case Temperature Fig 10. Power Dissipation
vs. Case Temperature
Tc [ ℃ ]
150
120
90
60
30
0
0 20 40 60 80 100 120 140 160
Ic [ A ]
TJ = 150℃
VGE ≥15V
Tc [ ℃ ]
750
600
450
300
150
0
0 20 40 60 80 100 120 140 160
PD [ W ]
TJ ≤ 150℃
PD = f(Tc)
Forward Drop Voltage, VF [V]
TC=125℃
TC=25℃
250
200
150
100
50
0
0 1 2 3 4
5/6
Copyright@Dawin Electronics Corp. All right reserved
May. 2009 DM2G100SH12AL
Package Out Line Information
7DM-3
6/6
