LESHAN RADIO COMPANY, LTD.
O15–1/5
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO – 40 Vdc
Collector–Base V oltage V CBO – 40 Vdc
Emitter–Base V oltage V EBO – 5.0 Vdc
Collector Current — Continuous I C– 600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR –5 Board (1) P D225 mW
T A =25 °C
Derate above 25°C 1.8 mW/°C
Thermal Resistance Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate (2) T A = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg
–55 to +150
°C
DEVICE MARKING
MMBT4403LT1 = 2T
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Mi n Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3) V (BR)CEO Vdc
(I C = –1.0 mAdc, I B = 0) – 40 —
Collector–Base Breakdown V oltage V (BR)CBO Vdc
(I C = –0.1mAdc, I E = 0) – 40 —
Emitter–Base Breakdown Voltage V (BR)EBO Vdc
(I E = –0.1mAdc, I C = 0) – 5.0 —
Base Cutoff Current I BEV µAdc
(V CE = –35 Vdc, V EB = –0.4 Vdc) — – 0.1
Collector Cutoff Current I CEX µAdc
(V CE = –35 Vdc, V EB = –0.4 Vdc) — – 0.1
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300 µs; Duty Cycle
<
2.0%.
1
3
2
MMBT4403LT1
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
General Purpose Transistors
PNP Silicon
2
EMITTER
3
COLLECTOR
1
BASE
LESHAN RADIO COMPANY, LTD.
O15–2/5
MMBT4403LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Mi n Max Unit
ON CHARACTERISTICS
DC Current Gain hFE ––
(I C = –0.1 mAdc, V CE = –1.0 Vdc) 30 ––
(I C = –1.0 mAdc, V CE = –1.0 Vdc) 60 ––
(I C = –10 mAdc, V CE = –1.0 Vdc) 100 ––
(I C = –150 mAdc, V CE = –2.0 Vdc)(3) 100 300
(I C = –500 mAdc, V CE = –2.0 Vdc)(3) 20 ––
Collector–Emitter Saturation V oltage(3) VCE(sat) Vdc
(I C = –150mAdc, I B = –15 mAdc) –– – 0.4
(I C = –500 mAdc, I B = –50 mAdc) –– – 0.75
Base–Emitter Saturation V oltage (3) V BE(sat) Vdc
(I C = –150 mAdc, I B = –15 mAdc) – 0.75 – 0.95
(I C = –500 mAdc, I B = –50 mAdc) –– – 1.3
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f TMHz
(I C = –20mAdc, V CE= –10 Vdc, f = 100 MHz) 200 ––
Collector–Base Capacitance C cb pF
(V CB= –10 Vdc, I E = 0, f = 1.0 MHz) –– 8.5
Emitter–Base Capacitance C eb pF
(V BE = –0.5 Vdc, I C = 0, f = 1.0 MHz) –– 30
Input Impedance h ie kΩ
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 1.5 15
V oltage Feedback Ratio h re X 10 –4
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 0.1 8.0
Small–Signal Current Gain h fe —
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 60 500
Output Admittance h oe µmhos
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 1.0 100
SWITCHING CHARACTERISTICS
Delay Time (V CC = – 30 Vdc, V EB = –2.0 Vdc, t d—15
Rise Time I C = –150mAdc, I B1 = –15 mAdc) t d—20ns
Storage T ime (V CC = –30 Vdc, I C = –150 mAdc, t s— 225 ns
Fall T ime I B1 = I B2 = –15 mAdc) t f—30
Figure 1. Turn–On Time
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
1.0 k
– 30 V
200
C S*< 10 pF
1.0 k
– 30 V
200
C S* < 10 pF 1N916
–16 V –16 V
< 20 ns
<2.0 ns+2.0V + 14V
Figure 2. Turn–Off Time
1.0 to 100µs,
DUTY CYCLE = 2%
SWITCHING TIME EQUIVALENT TEST CIRCUITS
00
1.0 to 100µs,
DUTY CYCLE = 2% +4.0 V
3. Pulse Test: Pulse Width
<
300 µs; Duty Cycle
<
2.0%.
LESHAN RADIO COMPANY, LTD.
O15–3/5
TYPICAL TRANSIENT CHARACTERISTICS
I C , COLLECTOR CURRENT (mA)
Figure 4. Charge Data
REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
V CC = 30 V
I C / I B = 10
Q
T
T
J
= 25°C
T
J
= 100°C
C
eb
C
cb
Q
A
10 20 30 50 70 100 200 300 500
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
30
20
10
7.0
5.0
3.0
2.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
CAPACITANCE (pF)
t , TIME (ns)
t r, RISE TIME (ns)
V
CC
= 30V
I
C
/ I
B
=10
t r @V CC=30V
t r @V CC=10V
t d@VBE(off) = 2.0V
t d@VBE(off) = 0V
I
C
/I
B
= 10
10 20 30 50 70 100 200 300 500
100
70
50
30
20
10
7.0
5.0 10 20 30 50 70 100 200 300 500
100
70
50
30
20
10
7.0
5.0
I C , COLLECTOR CURRENT (mA)
Figure 6. Rise Time
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
t s , RISE TIME (ns)
t
s
’
= t
s
– 1/8 t
f
I
B1
= I
B2
10 20 30 50 70 100 200 300 500
200
100
70
50
30
20
I
C
/I
B
= 10
I
C
/I
B
= 20
MMBT4403LT1
Q, CHARGE (nC)
LESHAN RADIO COMPANY, LTD.
O15–4/5
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
h re, VOLTAGE FEEDBACK RATIO (X 10 –4 )
h PARAMETERS
(V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves,
a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly
numbered curves on each graph.
I C , COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
I C , COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
h fe, CURRENT GAIN
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10
1000
700
500
300
200
100
70
50
30
20
10
5.0
2.0
1.0
0.5
0.2
0.1
I C , COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
h ie, INPUT IMPEDANCE (kΩ)
100
50
20
10
5
2
1
0.5
0.2
0.1
I C , COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
h oe , OUTPUT ADMITTANCE ( µmhos)
500
100
50
20
10
5.0
2.0
1.0
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = –10 Vdc, T A = 25°C
Bandwidth = 1.0 Hz
NF, NOISE FIGURE (dB)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10
R S, SOURCE RESISTANCE (Ω)
Figure 9. Source Resistance Effects
NF, NOISE FIGURE (dB)
f = 1.0 kHz
0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8
6
4
2
0
50 100 200 500 1k 2k 5k 10k 20k 50k
10
8
6
4
2
0
f , FREQUENCY (kHz)
Figure 8. Frequency Effects
I C = 50 µA
100 µA
500 µA
1.0 mA
I
C
= 1.0 mA, R
S
= 430Ω
I
C
= 500 µA, R
S
= 560Ω
I
C
= 50 µA, R
S
= 2.7kΩ
I
C
= 100 µA, R
S
= 1.6 kΩ
R
S
= OPTIMUM SOURCE RESISTANCE
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
MMBT4403LT1
LESHAN RADIO COMPANY, LTD.
O15–5/5
STATIC CHARACTERISTICS
I C , COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
I B , BASE CURRENT (mA)
Figure 15. Collector Saturation Region
I C , COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
I C , COLLECTOR CURRENT (mA)
Figure 17. Temperature Coefficients
h FE , NORMALIZED CURRENT GAIN
V CE, COLLECT OR EMITTER VOLTAGE (VOLTS)
I C=1.0 mA
T J = 125°C
V CE= 1.0 V
V CE= 10 V
25°C
–55°C
10 mA 100mA 500mA
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
1.0
0.8
0.6
0.4
0.2
0
V, VOLTAGE ( VOLTS )
COEFFICIENT (mV/ °C)
T J = 25°C
θ VC for VCE(sat)
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
=1.0 V
θ VS for V BE
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
10
0.8
0.6
0.4
0.2
0
+ 0.5
0
– 0.5
–1.0
–1.5
–2.0
– 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
MMBT4403LT1
