OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue D 03/2012
Page 1 of 9
Reflective Object Sensor
OPB703 through OPB705, OPB703WZ through OPB705WZ,
OPB70AWZ through OPB70HWZ
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Applications:
• Non-contact reflective object sensor
• Assembly line automation
• Machine automation
• Machine safety
• End of travel sensor
• Door sensor
• Mark Detection
• Office Equipment
• Gaming Equipment
Features:
• Phototransistor output
• High sensitivity
• Low-cost plastic housing
• Available with lenses for dust protection and
ambient light filtration
• Focused for maximum sensitivity
Description:
The OPB703, OPB704 and OPB705 consist of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon
Phototransistor, mounted side-by-side on converging optical axes in a black plastic housing and are designed for
PCBoard mounting. The OPB703WZ, OPB704WZ, OPB705WZ and OPB70BWZ are designed for remote mounting
utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned.
The OPB70AWZ consists of an Infrared (890nm) Light Emitting Diode (LED) and a NPN silicon Photodarlington,
mounted side-by-side on converging optical axes in a black plastic housing and is designed for remote mounting
utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum length, stripped and tinned.
The OPB70CWZ through OPB70FWZ consist of a Visible (Red 640nm) Light Emitting Diode (LED) and a NPN silicon
Phototransistor or Rbe Phototransistor, mounted side-by-side on converging optical axes in a black plastic housing
and are designed for remote mounting utilizing interconnect wires of UL approved 26 AWG, 24” (61.0cm) minimum
length, stripped and tinned.
Various lens options are available: No lens for the (OPB703, OPB703WZ), blue window for dust protection for the
(OPB704, OPB704WZ, OPB70BWZ) and aperture lens for improved resolution for the (OPB705, OPB705 WZ,
OPB70AWZ, OPB70CWZ, OPB70DWZ and OPB70HWZ). The OPB704G and OPB704GWZ offers excellent
protection for dirty environments.
The phototransistor responds to illumination from the emitter when a reflective object passes within the field of view
centered typically at 0.15” (3.8 mm).
Custom electrical, wire, cabling and connectors are available. Contact your local representative or OPTEK for more
information.
WZ
Version
Ordering Information
Part LED Peak Detector Optical Cover Lead or Wire
OPB703
890 nm
Transistor
None
0.160" Leads
OPB703WZ 24" / 26 AWG Wire
OPB704 0.160" Leads
OPB704WZ 24" / 26 AWG Wire
OPB704G 0.160" Leads
OPB704GWZ 24" / 26 AWG Wire
OPB705
Aperture
0.160" Leads
OPB705WZ
24" / 26 AWG Wire
OPB70AWZ Darlington
OPB70BWZ Rbe Transistor Blue Window
OPB70CWZ
640 nm
Rbe Transistor
Aperture
OPB70DWZ Transistor
OPB70EWZ Rbe Transistor Clear Window
OPB70FWZ Transistor
Blue
Window
OPB70HWZ 24” / 26 AWG Wire
RoHS
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue D 03/2012
Page 2 of 9
Reflective Object Sensor
OPB703 through OPB705, OPB703WZ through OPB705WZ,
OPB70AWZ through OPB70HWZ
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPB703WZ, OPB704WZ,
OPB705WZ, OPB70DWZ
OPB70HWZ
OPB703, OPB704, OPB705
1 4
2 3
OPB703, OPB704, OPB705
OPB703WZ, OPB704WZ, OPB705WZ, OPB70AWZ, OPB70BWZ, OPB70CWZ, OPB70DWZ
OPB703 OPB704 OPB705
OPB703WZ OPB704WZ OPB705WZ
OPB70BWZ OPB70AWZ
OPB70EWZ OPB70CWZ
OPB70FWZ OPB70DWZ
OPB70HWZ
Anode Collector
Cathode Emitter
OPB70BWZ,
OPB70CWZ
OPB70EWZ
Anode Collector
Cathode Emitter
OPB70AWZ
Anode Collector
Emitter
Cathode
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue D 03/2012
Page 3 of 9
Reflective Object Sensor
OPB703 through OPB705, OPB703WZ through OPB705WZ,
OPB70AWZ through OPB70HWZ
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPB704G
OPB704GWZ
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue D 03/2012
Page 4 of 9
Reflective Object Sensor
OPB703 through OPB705, OPB703WZ through OPB705WZ,
OPB70AWZ through OPB70HWZ
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage Temperature Range -40°C to +80° C
Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] 240° C(1)
Input Diode
Forward DC Current 40 mA
Reverse DC Voltage 2 V
Power Dissipation 100 mW(2)
Output Photodetector
Collector-Emitter Voltage
Phototransistor
Photodarlington
30 V
15 V
Emitter-Collector Voltage 5 V
Power Dissipation 100 mW(2)
Collector DC Current 25 mA
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) For OPB703, OPB704 and OPB705, derate linearly 1.67 mW/° C above 25° C.
(3) For OPB703WZ, OPB704WZ, OPB705WZ, OPB70BWZ, OPB704G, OPB704GWZ and OPB70HWZ derate linearly 1.82 mW/° C
above 25° C.
(4) The distance from the assembly face to the reflective surface is d.
(5) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman
Kodak, Catalog # E 152 7795.
Electrical Characteristics (TA = 25° C unless otherwise noted)
(OPB703, OPB703WZ, OPB704, OPB704WZ, OP B705, OPB705 WZ, OPB704G, OPB704 GWZ, OPB70HWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OP265 for additional information — for reference only)
VF Forward Voltage - - 1.7 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP505 for additional information — for reference only)
V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100 µA
V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IEC = 100µA
ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0
Coupled
IC(ON)
On-State Collector Current
OPB70HWZ
OPB703, OPB703WZ
OPB704, OPB704WZ
OPB705, OPB705WZ
0.60
0.30
0.20
0.15
-
-
-
-
3.5
2.5
2.5
1.0
mA
VCE = 5 V, IF = 40mA , d = 0.15” (3)(7)
OPB704G, OPB704GWZ 0.50 - 6.0 VCE = 5 V, IF = 40mA , d = 0.20” (3)(6)
ICX
Crosstalk
OPB703, OPB703WZ
OPB704, OPB704WZ, OPB70HWZ
OPB705, OPB705WZ
-
-
-
-
-
-
20
20
10
µA
VCE = 5 V, IF = 40mA(6)
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue D 03/2012
Page 5 of 9
Reflective Object Sensor
OPB703 through OPB705, OPB703WZ through OPB705WZ,
OPB70AWZ through OPB70HWZ
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) Derate linearly 1.82 mW/° C above 25° C.
(3) The distance from the assembly face to the reflective surface is d.
(4) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(5) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: East-
man Kodak, Catalog # E 152 7795.
(6) All parameters tested using pulse techniques.
Electrical Characteristics (TA = 25° C unless otherwise noted)
(OPB70AWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OP265 for additional information — for reference only)
VF Forward Voltage - - 1.7 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output PhotoDarlington (See OP535 for additional information — for reference only)
V(BR)CEO Collector-Emitter Breakdown Voltage 15 - - V ICE = 1.0 mA, EE =0
V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IEC = 100µA, EE =0
ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0
Coupled
IC(ON)
On-State Collector Current 5.0 - 26.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (2)(5)
ICX
Crosstalk - - 25 µA VCE = 5 V, IF = 40mA(4)
V(SAT)
Saturation Voltage - - 1.15 V IC = 400 µA, IF = 40mA , d = 0.15” (2)(5)
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue D 03/2012
Page 6 of 9
Reflective Object Sensor
OPB703 through OPB705, OPB703WZ through OPB705WZ,
OPB70AWZ through OPB70HWZ
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) For OPB703, OPB704 and OPB705, derate linearly 1.67 mW/° C above 25° C.
(3) For OPB703WZ, OPB704WZ, OPB705WZ and OPB70BWZ, derate linearly 1.82 mW/° C above 25° C.
(4) The distance from the assembly face to the reflective surface is d.
(5) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman
Kodak, Catalog # E 152 7795.
(7) All parameters tested using pulse techniques.
Electrical Characteristics (TA = 25° C unless otherwise noted)
(OPB70BWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OP265 for additional information — for reference only)
VF Forward Voltage - - 1.7 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP705 for additional information — for reference only)
V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100 µA
V(BR)ECO Emitter-Collector Breakdown Voltage 0.4 - - V IEC = 100µA
ICEO Collector Dark Current - - 100 nA VCE = 10 V, IF = 0, EE =0
Coupled
IC(ON) On-State Collector Current
OPB70BWZ 0.50 - 3.0 mA VCE = 5 V, IF = 40mA , d = 0.15” (3)(6)
ICX Crosstalk
OPB70BWZ - - 5 µA VCE = 5 V, IF = 40mA(5)
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue D 03/2012
Page 7 of 9
Reflective Object Sensor
OPB703 through OPB705, OPB703WZ through OPB705WZ,
OPB70AWZ through OPB70HWZ
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) For OPB703WZ, OPB704WZ, OPB705WZ and OPB70BWZ, derate linearly 1.82 mW/° C above 25° C.
(3) The distance from the assembly face to the reflective surface is d.
(4) Lower curve is based on a calculated worst-case condition, rather than the conventional -2Ω limit.
(5) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(6) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: East-
man Kodak, Catalog # E 152 7795.
(7) All parameters tested using pulse techniques.
Coupled
IC(ON)
On-State Collector Current
OPB70CWZ .10 - 1.0
mA VCE = 5 V, IF = 40mA , d = 0.15” (2)(5)
OPB70EWZ .25 - 2.5
V(SAT)
Saturation Voltage - - 0.4 V IC = 100 µA, IF = 40mA , d = 0.15” (2)(5)
ICX
- - 2 µA VCE = 5 V, IF = 40mA(4) Crosstalk
Electrical Characteristics (TA = 25° C unless otherwise noted)
(OPB70CWZ and OPB70EWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OVLAS6CB8 for additional information — for reference only)
VF Forward Voltage - - 2.6 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP505 for additional information — for reference only)
V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100µA, IF = 0, EE =0
V(BR)ECO Emitter-Collector Breakdown Voltage 0.4 - - V IEC = 100µA, IF = 0, EE =0
ICEO Collector Dark Current - - 100 nA VCE = 10 V, IF = 0, EE =0
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue D 03/2012
Page 8 of 9
Reflective Object Sensor
OPB703 through OPB705, OPB703WZ through OPB705WZ,
OPB70AWZ through OPB70HWZ
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) For OPB703WZ, OPB704WZ, OPB705WZ and OPB70BWZ, derate linearly 1.82 mW/° C above 25° C.
(3) The distance from the assembly face to the reflective surface is d.
(4) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflecting surface.
(5) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: East-
man Kodak, Catalog # E 152 7795.
(6) All parameters tested using pulse techniques.
Coupled
IC(ON)
On-State Collector Current
OPB70DWZ .10 - 1.5
mA VCE = 5 V, IF = 40mA , d = 0.15” (2)(5)
OPB70FWZ .25 - 3.5
V(SAT)
Saturation Voltage - - 0.4 V IC(ON) = 100 µA, IF = 40mA , d = 0.15” (2)(5)
ICX
- - 5.0 µA VCE = 5 V, IF = 40mA(4) Crosstalk
Electrical Characteristics (TA = 25° C unless otherwise noted)
(OPB70DWZ and OPB70FWZ)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode (See OVLAS6CB8 for additional information — for reference only)
VF Forward Voltage - - 2.6 V IF = 40mA
IR Reverse Current - - 100 µA VR = 2 V
Output Phototransistor (See OP505 for additional information — for reference only)
V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V ICE = 100µA, IF = 0, EE =0
V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 - - V IEC = 100µA, IF = 0, EE =0
ICEO Collector Dark Current - - 250 nA VCE = 10 V, IF = 0, EE =0
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue D 03/2012
Page 9 of 9
Reflective Object Sensor
OPB703 through OPB705, OPB703WZ through OPB705WZ,
OPB70AWZ through OPB70HWZ
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Forward Voltage vs Forward Current vs Temp
0.6
0.8
1.0
1.2
1.4
1.6
0 5 10 15 20 25 30 35 40
Forward Current (mA)
Typical Forward Voltage
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
Normalized Forward Current at 20 mA and 20° C
OPB705 - Output vs Distance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Distance (inches)
Normalized O u tput
Kodak 90%
Kodak 19%
Copier Paper
Avery Labels
Retro Reflective
Normalized at I
F
= 40 mA
Distance = 0.15" & Kodak 90%
OPB703 - Output vs Distance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Distance (inches)
Normalized Output
Kodak 90%
Kodak 19%
Avery
Corporate
Retro Reflective
Normalized at I
F
= 40 mA
Distance = 0.15" & Kodak 90%
OPB704 - Output vs Distance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Distance (i nc hes)
Normalized Output
Kodak 90%
Kodak 19%
Copier Paper
Avery Label
Retro Reflective
Normalized at IF = 40 mA
Distance = 0.15" & Kodak 90%
OPB703—Output Distance OPB704, OPB70B, OPB70H—Output Distan ce
OPB705, OPB70A, OPB70C, OPB70D—Output Distance LED
