Ol DEW zavsoah Udiae74 2 3875081 GE SOLID STATE _ ss_rsC'=sCswsM TEE 182740 OD OF 37-73 Standard Power MOSFETs File Number 1824 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V N-CHANNEL ENHANCEMENT MODE rps(on) = 0.055 N and 0.08 Q b Features: = SOA is power-dissipation limited a Nanosecond switching speeds Linear transfer characteristics a a High input impedance s Majority carrier device $ $2cS-33741 The IRF150, [RF151, IRF152 and IRF153 are n-channel TERMINAL DIAGRAM enhancement-mode silicon-gate power fieid-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and tow gate-drive power. SOURCE These types can be operated directly from integrated circuits. The IRF-types are supplied in tha JEDEC TO-204AE metal package. TERMINAL DESIGNATION ORAIN (FLANGE } GATE 92CS-37601 JEDEC TO-204AE Absolute Maximum Ratings Parameter IRF 150 IRF151 IRF152 tRF153 Units Vos Drain - Source Voltage 100 60 100 60 Vv Vor Drain - Gate Voltage (Rgg = 20 ka} 100 60 100 60 Vv ip @ Tc = 26C Continuous Drain Curent 40 40 33 33 A Ip @ Te = 100C Continuous Drain Current 25 25 20 20 A tom Pulsed Drain Current @ 160 160 132 132 A Ves Gate - Source Voltage +20 Vv Pp @Tc = 25C Max. Power Dissipation . 160 {See Fig. 14) Ww Linear Derating Factor 1.2 (See Fig. 14} WIK th Inductive Current, Clamped (See Fig. 15 and 16) = 100nH A 160 | 160 | 132 | 132 fi ion and Teg Srraae fomperature Range ~55 to 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s} C 217