VS-P100 Series
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Revision: 27-Jul-2018 1Document Number: 93754
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Power Modules,
Passivated Assembled Circuit Elements, 25 A
FEATURES
• Glass passivated junctions for greater reliability
• Electrically isolated base plate
• Available up to 1200 VRRM/VDRM
• High dynamic characteristics
• Wide choice of circuit configurations
• Simplified mechanical design and assembly
• UL E78996 approved
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-P100 series of integrated power circuits consists of
power thyristors and power diodes configured in a single
package. With its isolating base plate, mechanical designs
are greatly simplified giving advantages of cost reduction
and reduced size.
Applications include power supplies, control circuits and
battery chargers.
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IO25 A
Type Modules - thyristor, standard
Package PACE-PAK (D-19)
PACE-PAK (D-19)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IO85 °C 25 A
ITSM
50 Hz 357 A
60 Hz 375
I2t50 Hz 637 A2s
60 Hz 580
I2t6365 A2s
VDRM, VRRM 400 to 1200 V
VISOL 2500 V
TJRange -40 to +125 °C
TStg -40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK REVERSE AND
PEAK OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ MAXIMUM
mA
VS-P101, VS-P121, VS-P131 400 500
10
VS-P102, VS-P122, VS-P132 600 700
VS-P103, VS-P123, VS-P133 800 900
VS-P103, VS-P124, VS-P134 1000 1100
VS-P105, VS-P125, VS-P135 1200 1300
VS-P100 Series
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ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum DC output current at case
temperature IOFull bridge 25 A
85 °C
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM,
IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
357
A
t = 8.3 ms 375
t = 10 ms 100 % VRRM
reapplied
300
t = 8.3 ms 315
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
637
A2s
t = 8.3 ms 580
t = 10 ms 100 % VRRM
reapplied
450
t = 8.3 ms 410
Maximum I2t for fusing I2tt = 0.1 ms to 10 ms, no voltage reapplied
I2t for time tx = I2t · tx 6365 A2s
Maximum value of threshold voltage VT(TO) TJ = 125 °C 0.82 V
Maximum level value of on-state slope
resistance rt1 TJ = 125 °C, average power = VT(TO) x IT(AV) + rt + (IT(RMS))212 m
Maximum on-state voltage drop VTM ITM = x IT(AV) TJ = 25 °C 1.35 V
Maximum forward voltage drop VFM IFM = x IF(AV) TJ = 25 °C 1.35 V
Maximum non-repetitive rate of rise of
turned-on current dI/dt TJ = 125 °C from 0.67 VDRM
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 200 A/μs
Maximum holding current IHTJ = 25 °C anode supply = 6 V, resistive load, gate open 130 mA
Maximum latching current ILTJ = 25 °C anode supply = 6 V, resistive load 250
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state
voltage dV/dt TJ = 125 °C, exponential to 0.67 VDRM gate open 200 V/μs
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM TJ = 125 °C, gate open circuit 10 mA
Maximum peak reverse leakage current IRRM TJ = 25 °C 100 μA
RMS isolation voltage VISOL 50 Hz, circuit to base, all terminals shorted,
TJ = 25 °C, t = 1 s 2500 V
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8W
Maximum average gate power PG(AV) 2
Maximum peak gate current IGM 2A
Maximum peak negative gate voltage -VGM 10 V
Maximum gate voltage required to trigger VGT
TJ = -40 °C
Anode supply =
6 V resistive load
3
VTJ = 25 °C 2
TJ = 125 °C 1
Maximum gate current required to trigger IGT
TJ = -40 °C 90
mATJ = 25 °C 60
TJ = 125 °C 35
Maximum gate voltage that will not trigger VGD TJ = 125 °C, rated VDRM applied 0.2 V
Maximum gate current that will not trigger IGD 2mA
VS-P100 Series
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Note
(1) A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
Fig. 2 - On-State Power Loss Characteristics Fig. 3 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
and storage temperature range TJ, TStg -40 to +125 °C
Maximum thermal resistance,
junction to case per junction RthJC DC operation 2.24
K/W
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.10
Mounting torque, base to heatsink (1) 4Nm
Approximate weight 58 g
2.0 oz.
Case style PACE-PAK (D-19)
Maximum Total Power Loss (W)
Total Output Current (A)
5101520
25
0
0
60
50
40
30
20
10
93754_01a
~
+
-
180°
(sine)
TJ = 125 °C
Maximum Total Power Loss (W)
Maximum Allowable
Ambient Temperature (°C)
25 7550 100 125
0
60
50
40
30
20
10
0
93754_01b
R
thSA
= 15 K/W - ΔR
2 K/W
3 K/W
7 K/W
10 K/W
5 K/W
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
10 1505
15
10
5
0
93754_02
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
TJ = 125 °C
Per junction
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
20010155
20
10
15
5
0
93754_03
DC
180°
120°
90°
60°
30°
RMS limit
TJ = 125 °C
Per junction
Conduction period
Ø
VS-P100 Series
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Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Voltage Drop Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
Maximum Allowable Case
Temperature (°C)
Total Output Current (A)
10 2051525
30
0
70
80
90
100
110
120
130
93754_04
180°
(Sine)
180°
(Rect.)
Fully turned-on
Per module
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
0123456
1
100
10
1000
93754_05
TJ = 25 °C
TJ = 125 °C
Per junction
Peak Half Sine Wave
On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 1001
150
200
300
250
350
93754_06
Per junction
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
On-State Current (A)
Pulse Train Duration (s)
0.1 10.01
100
150
200
250
300
350
400
93754_07
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
Per junction
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 101
Square Wave Pulse Duration (s)
ZthJC - Transient Thermal
Impedance (K/W)
93754_08
Per junction
Steady state value
RthJC = 2.24 K/W
(DC operation)
VS-P100 Series
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001
93754_09 Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
(1) (2) (3) (4)
(1) PGM = 10 W, tp = 5 ms
(2) PGM = 20 W, tp = 25 ms
(3) PGM = 50 W, tp = 1 ms
(4) PGM = 100 W, tp = 500 μs
Frequency limited by PG(AV)
(b)
(a)
TJ = 25 °C
TJ = 125 °C
TJ = 40 °C
VGD
IGD
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 10 V, 20 Ω, tr ≤ 1 μs
(b) Recommended load line for
rated dI/dt: 10 V, 65 Ω, tr ≤ 1 μs
1-Vishay Semiconductors product
2- Module type
6- K = optional voltage suppression
7- W = optional freewheeling diode
4- Circuit conguration
- Voltage code
1 = 400 V
2 = 600 V
3 = 800 V
4 = 1000 V
5 = 1200 V
5
- Current rating
1 = 25 A DC (P100 series)
4 = 40 A DC (P400 series)
0 = single phase, hybrid bridge common cathode
2 = single phase, hybrid bridge doubler connection
3 = single phase, all SCR Bridge
3
Device code
132 4 5 6 7
VS- 1P02KW
VS-P100 Series
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Revision: 27-Jul-2018 6Document Number: 93754
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Note
(1) To complete code refer to Voltage Ratings table, i.e.: for 600 V P10.W complete code is P102W
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION
CODE
SCHEMATIC DIAGRAM TERMINAL POSITIONS
Single phase, hybrid bridge
common cathode 0
Single phase, hybrid bridge
doubler connection 2
Single phase, all SCR bridge 3
CODING (1)
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION
CODE
BASIC
SERIES
WITH VOLTAGE
SUPPRESSION
WITH
FREEWHEELING
DIODE
WITH BOTH
VOLTAGE SUPPRESSION
AND FREEWHEELING
DIODE
Single phase, hybrid bridge
common cathode 0 P10. P10.K P10.W P10.KW
Single phase, hybrid bridge
doubler connection 2 P12. P12.K - -
Single phase, all SCR bridge 3 P13. P13.K - -
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95335
G1
AC2
AC1
G2
(-) (+)
AC1 G1-
AC2 G2+
G2G1
AC1
AC2
(-) (+)
AC1 G1-
AC2 G2+
G1G3
AC2
AC1
(-) (+)
G2G4
AC2 G2-
AC1 G3
G1G4
+
Document Number: 95335 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 24-Jul-08 1
D-19 PACE-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
0.9 x 45°
(0.035 x 45°)
12.7 (0.50)
63.5 (2.50)
45 (1.77)
12.7 (0.50) Ø 1.65 (0.06)
Fast-on 6.35 x 0.8 (0.25 x 0.03)
4.6 (0.18)
2.5 (0.10)
MAX.
5.2 (0.20)
48.7 (1.91)
33.8 (1.33)
32.5 (1.28) MAX.
23.2 (0.91)
15.5 (0.61)
MAX.
25 (0.98) MAX.
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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