BLA6H0912-500,112 - NXP - Datasheet.Live

1. Product profile

1.1 General description

500 W LDMOS power transistor intended for avionics transmitter applications in the

960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.

1.2 Features and benefits

Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply

voltage of 50 V, an IDq of 100 mA, a tp of 128 μs with δ of 10 %:

Output power = 450 W

Power gain = 17 dB

Efficiency = 50 %

Easy power control

Integrated ESD protection

High flexibility with respect to pulse formats

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadban d operation (960 MHz to 1215 MHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, rega rd in g Re str ictio n of Haza rd ous Sub s tances

(RoHS)

BLA6H0912-500

LDMOS avionics radar power transistor

Rev. 04 — 10 May 2010 Product data sheet

Table 1. Test information

Ty pical RF performance at Tcase =25

C; tp = 128

= 10 %; IDq = 100 mA; in a class-AB

production test circuit.

Mode of operation f VDS PLGpηDtrtf

(MHz) (V) (W) (dB) (%) (ns) (ns)

pulsed RF 960 to 1200 50 450 17 50 20 6

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Product data sheet Rev. 04 — 10 May 2010 2 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

1.3 Applications

A-band power amplifier s for radar applications in the 960 MHz to 1215 MHz frequency

range

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

5. Thermal characteristics

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1drain

2gate

3source [1]

sym11

Table 3. Ordering i nformation

Type number Package

Name Description Version

BLA6H0912-500 - flanged ceramic package; 2 mounting holes; 2 leads SOT634A

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 100 V

VGS gate-source voltage −0.5 +13 V

IDdrain current - 54 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 200 °C

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Zth(j-c) transient thermal impedance from

junction to case Tcase =85°C; PL=450W

tp = 32 μs; δ= 2 % 0.03 K/W

tp = 128 μs; δ= 10 % 0.08 K/W

tp = 2400 μs; δ= 6.4 % 0.2 K/W

Product data sheet Rev. 04 — 10 May 2010 3 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

6. Characteristics

6.1 Ruggedness in class-AB operation

The BLA6H0912-500 is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: f = 960 MHz,

1030 MHz, 1090 MHz or 1215 MHz. VDS =50V; I

Dq =100mA; P

L=450W; t

p= 128 μs;

δ=10%.

Table 6. DC characteristics

Tj = 25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D= 2.7 mA 100 - - V

VGS(th) gate-source threshold voltage VDS = 10 V; ID= 270 mA 1.3 1.8 2.2 V

IDSS drain leakage current VGS =0V; V

DS =50V--3.6μA

IDSX drain cut-off current VGS =V

GS(th) + 3.75 V;

VDS =10V 53.5 64 - A

IGSS gate leakage current VGS =11V; V

DS =0V--360nA

gfs forward transconductance VDS =10V; I

D= 405 mA 2.50 3.5 4.55 S

RDS(on) drain-source on-state resistance VGS =V

GS(th) + 3.75 V;

ID= 14.18 A -7085mΩ

Table 7. RF characteristics

Mode of operation: pulsed RF; f = 960 MHz to 1215 MHz; tp = 128

= 10 %; RF performance at

VDS =50V; I

Dq =100mA; T

case =25

C; unless otherwise specified, in a class-AB production test

circuit.

Symbol Parameter Conditions Min Typ Max Unit

PLoutput power - 450 - W

VDS drain-source voltage PL=450W--50V

Gppower gain PL=450W 1617- dB

RLin input return loss PL=450W 7 11 - dB

ηDdrain efficiency PL=450W 4550- %

Pdroop(pulse) pulse droop power PL=450W - 0 0.3 dB

trrise time PL= 450 W - 20 50 ns

tffall time PL=450W - 6 50 ns

Product data sheet Rev. 04 — 10 May 2010 4 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

7. Application information

7.1 Impedance information

Table 8. Typical impedance

Typical values per section unless otherwise specified.

f ZSZL

MHz Ω Ω

960 1.36 − j1.45 1.49 − j1.48

1030 1.54 − j1.25 1.51 − j1.45

1090 1.67 − j1.22 1.36 − j1.47

1140 1.68 − j1.29 1.15 − j1.41

1215 1.43 − j1.42 0.79 − j1.17

Fig 1. Definition of transis tor imp e da nc e

001aaf05

drain

gate

Product data sheet Rev. 04 — 10 May 2010 5 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

7.2 Performance curves

VDS =50V; I

Dq = 100 mA; tp = 128 μs; δ = 10 %.

(1) f = 960 MHz

(2) f = 1030 MHz

(3) f = 1090 MHz

(4) f = 1140 MHz

(5) f = 1215 MHz

VDS =50V; I

Dq = 100 mA; tp = 128 μs; δ = 10 %.

(1) f = 960 MHz

(2) f = 1030 MHz

(3) f = 1090 MHz

(4) f = 1140 MHz

(5) f = 1215 MHz

Fig 2. Load power as a function of input power;

typical valu e s Fig 3. Power gain as a function of load power;

typical values

Pi (W)

018126

001aal600

200

400

600

(W)

(1)

(2)

(3)

(4)

(5)

001aal601

PL (W)

0 600400200

(dB)

(1)

(2)

(3)

(4)

(5)

Product data sheet Rev. 04 — 10 May 2010 6 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

VDS =50V; I

Dq = 100 mA; tp = 128 μs; δ = 10 %.

(1) f = 960 MHz

(2) f = 1030 MHz

(3) f = 1090 MHz

(4) f = 1140 MHz

(5) f = 1215 MHz

VDS =50V; I

Dq = 100 mA; tp = 128 μs; δ = 10 %.

Fig 4. Drain efficiency as a func tion of load power;

typical valu e s Fig 5. Power gain and d rain efficiency as function of

frequency; typical values

PL (W)

0 600400200

001aal602

ηD

(%)

(1)

(2)

(3)

(4)

(5)

001aal603

f (MHz)

950 125011501050

(dB)

ηD

(%)

ηD

PL = 500 W; VDS =50V; I

Dq = 100 mA; tp = 128 μs; δ = 10 %.

Fig 6. Input return loss as a function of frequency; typical values

001aal604

f (MHz)

950 125011501050

RLin

(dB)

Product data sheet Rev. 04 — 10 May 2010 7 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

7.3 Curves measured under Mode-S ELM pulse-conditions

f = 1030 MHz; VDS =50V; I

Dq = 100 mA.

(1) Th = 25 °C

(2) Th = 65 °C

f = 1030 MHz; VDS =50V; I

Dq = 100 mA.

(1) Th = 25 °C

(2) Th = 65 °C

Fig 7. Load Power as a function of input power;

typical valu e s Fig 8. Power gain as a function of load power;

typical values

Pi (W)

020168124

001aal605

200

400

600

(W)

(2)

(1)

001aal606

PL (W)

0 600400200

(dB)

(2)

(1)

f = 1030 MHz; VDS =50V; I

Dq = 100 mA.

(1) Th = 25 °C

(2) Th = 65 °C

Fig 9. Drain efficiency as function of load power; typical values

PL (W)

0 600400200

001aal607

ηD

(%)

(2) (1)

Product data sheet Rev. 04 — 10 May 2010 8 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

7.4 Curves measured under Mode-S interrogator pulse-conditions

f = 1030 MHz; VDS =50V; I

Dq = 100 mA.

(1) Th = 25 °C

(2) Th = 65 °C

f = 1030 MHz; VDS =50V; I

Dq = 100 mA.

(1) Th = 25 °C

(2) Th = 65 °C

Fig 10. Load Power as a function of input power;

typical valu e s Fig 11. Power gain as a function of load power;

typical values

Pi (W)

020168124

001aal608

200

400

600

(W)

(2)

(1)

001aal609

PL (W)

0 600400200

(dB)

(2)

(1)

f = 1030 MHz; VDS =50V; I

Dq = 100 mA.

(1) Th = 25 °C

(2) Th = 65 °C

Fig 12. Drain efficiency as function of load power; typical values

001aal610

PL (W)

0 600400200

ηD

(%)

(2)

(1)

Product data sheet Rev. 04 — 10 May 2010 9 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

8. Test information

[1] American Technical Ceramics type 100B or capacitor of same quality.

[2] American Technical Ceramics type 800B or capacitor of same quality.

Printed-Circuit Board (PCB) material: Duroid 6006 with εr= 6.15 and thickness = 0.64 mm.

See Table 9 for list of components.

Fig 13. Component layout

Table 9. List of components

See Figure 13 for component layout.

Component Description Value Remarks

C1, C3 multilayer ceramic chip capacitor 10 μF; 35 V

C2, C3, C14 multilayer ceramic chip capacitor 39 pF [1]

C4, C13 multilayer ceramic chip capacitor 1 nF [1]

C6, C7 multilayer ceramic chip capacitor 6.8 pF [2]

C5, C8, C11, C12 multilayer ceramic chip capacitor 82 pF [2]

C15 electrolytic capacitor 47 μF; 63 V

R1 SMD resistor 56 ΩSMD 0603

R2 metal film resistor 51 Ω

001aal59

R1 C3 C4

C11

C15

C14

C13

C12

Product data sheet Rev. 04 — 10 May 2010 10 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

9. Package outline

Fig 14. Package outline SOT634A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT634A 01-11-27

03-05-01

0 5 10 mm

scale

langed ceramic package; 2 mounting holes; 2 leads SOT634

EE1

M M

w1AB

M M M

UNIT Q

cD E

EFLp q

mm 0.15

0.08

12.82

12.57

13.34

13.08

22.56

22.15

1.14

0.89

5.33

4.32

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

3.38

3.12 27.94 34.16

33.91

13.84

13.59 0.25

0.51

4.83

3.68

1.70

1.45

inches 0.006

0.003

0.505

0.495

0.525

0.515

13.34

13.08

0.525

0.515

0.888

0.872

22.58

22.12

0.889

0.871

0.045

0.035

0.210

0.170

0.133

0.123 1.100 1.345

1.335

0.545

0.535 0.010 0.020

0.190

0.145

0.067

0.057

Product data sheet Rev. 04 — 10 May 2010 11 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

10. Abbreviations

11. Revision history

Table 10. Abbreviations

Acronym Description

DME Distance Measuring Equipment

ELM Extended Length Message

JTIDS Joint Tactical Information Distribution System

LDMOS Laterally Diffused Metal-Oxide Semiconductor

Mode-S Mode Select

RF Radio Frequency

SMD Surface Mounted Device

TACAN TACtical Air Navigation

TCAS Traffic Collision Avoidance System

VSWR Voltage Standing-Wa ve Ratio

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLA6H0912-500_4 20100510 Product data sheet - BLA6H0912-500_3

Modifications: •Section 1.3 on page 2: the application has been corrected.

BLA6H0912-500_3 20100330 Product data sheet - BLA6H0912-500_2

BLA6H0912-500_2 20100302 Product data sheet - BLA6H0912-500_1

BLA6H0912-500_1 20090305 Objective data sheet - -

Product data sheet Rev. 04 — 10 May 2010 12 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

12. Legal information

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[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

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the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Product [short] data sheet Production This document contain s the product specification.

Product data sheet Rev. 04 — 10 May 2010 13 of 14

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

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Quick reference data — The Quick reference data is an extract of the

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13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLA6H0912-500

LDMOS avionics radar power transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 10 May 2010

Document identifier: BLA6H0912-500_4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Impedance information. . . . . . . . . . . . . . . . . . . 4

7.2 Performance curves . . . . . . . . . . . . . . . . . . . . . 5

7.3 Curves measured under Mode-S ELM

pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 7

7.4 Curves measured under Mode-S interrogator

pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 8

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Contact information. . . . . . . . . . . . . . . . . . . . . 13

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14