SILICON EPITAXIAL PLANAR TYPE H N 1 D 03 F ULTRA HIGH SPEED SWITCHING APPLICATION Unit in mn +0.2 . : . + 28-03 Built in Anode Common and Cathode Common, 02 +4 16-0.1 Unit 1 ij - Low Forward Voltage Q1,Q2 : Vp=0.90V(Typ.) Pen : i % a} al @ ao Fast Reverse Recovery Time Q1,Q2 : trr=l1.6ns(Typ.) qi G | + oF 2 - Small Total Capacitance Q1,02 : Cr=0.9pF(Typ.) ai] 3 a | 5 3 TT] Unit 2 | 4 Low Forward Voltage Q3,Q4 : Vp=0.92(Typ.) ~ = Fast Reverse Recovery Time Q3,Q4 : trr=l.6ns(Typ.) tr | *e Small Total Capacitance Q3,04 : Cr=2.2pF(Typ.) 7 | _ Fh 1. ANODE , 2. ANODE oO 3. ANODE t oe 4. CATHODE 9 i - Unit 1, Unit 2 COMMON MAXIMUM RATINGS (Ta=25C) 5. CATHODE 3 6. CATHODE PH 4 CHARACTERISTIC SYMBOL RATING UNIT JEDEC - Maximum(Peak) Reverse Voltage VRM 85 Vv ETAD Reverse Voltage VR 80 Vv TOSHIBA Maximum(Peak) Forward Current IM 300% mA Weight : 0.014 Average Forward Current Ig 100% mA Surge Current (10ms) Irsm 2% A Power Dissipation Pp 300 mJ Marking Junction Temperature Tj 125 C 6 5 4 Storage Temperature Tstg -55~125 c A o B * : This is the Maximum Ratings of single diode (Q1 or Aa Q2 or Q3 or Q4). _ In the case of using Unit 1 and Unit 2 independently a A or simultaniously, the Maximum Ratings per diode is 1 2 3 75% of the single diode one. Fig. 1 REVERSE RECOVERY TIME (try) TEST CIRCUIT PIN ASSIGNMENT (TOP VIEW) INPUT WAVEFORM OUTPUT WAVEFORM rr Unit2 | off! sf] 40 t t ' ' i I IN O.0laF DUT U 1 1 \ Qo o. Tp=10mA ' 1Q4 a: ! 0 { ty) peaas=- | ! OSCILLOSCOPE 1 'l Kat K q2! | VS CRyn= 500) R 01 TR id 2p 3 : | I 5Ons \ I i i ( PULSE GENERATOR ter p Unity gs CRoup=500) 1269HN1D03F Unit 1 ELECTRICAL CHARACTERISTICS (Q1,Q2 COMMON) (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.] UNIT VF(L) IF=1mA - 10.60 - Forward Voltage VF(2) IFf=10mA - 0.72 - Vv VF(3) IF=L00mA - 10.90 |1.20 Reverse Current IRQ) VR=30V - ~__|0-10 HA TR(2) VrR=80V - - 10.50 Total Capacitance CT Vp=0, f=lMHz - 0.90 3.0 pF Reverse Recovery Time trr If=l0mA (Fig.1) - 1.60 | 4.0 ns Unit 2 ELECTRICAL CHARACTERISTICS (Q3,Q4 COMMON) (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.| UNIT VF(1) If=1mA - 0.61 ~ Forward Voltage VF(2) IF=LOmA - 0.74 - Vv VF(3) Ip=LO0mA - 10.92 11.20 Reverse Current TRL) YR=30V - 0.10 HA IR(2) VR=80V - - 10.50 Total Capacitance CT VR=0, =1MHz - 2,20 | 4.0 pF Reverse Recovery Time trr If=10mA (Fig.1) - 1.60 | 4.0 ns 1270Ip (ma) FORWARD CURRENT TOTAL CAPACITANCE Cry (pF) 0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE Vp () Unit 1 ; Cp VR 2.0 =1 MHz Ta=25 1.6 12 0.8 01 0.3 1 3 10 30 10) REVERSE VOLTAGE Vy (vy) Vp MAX. a ~ a 2 3 1.2 300 127] Ip (4A) CURRENT REVERSE 20 AQ REVERSE VOLTAGE 60 VR (Vv) HN1DO3F oHN1D03F Unit 2 Unit 2 Ip ~-V _ 103 F F IR Vr <q = ge 10 3 & = fs o 5 10 ee 4 : eo & 2 8 2 mm a 2 = = 107! B nx = a ~ & * = 10? 0 20 40 69 80 0 02 04 O06 08 10 12 FORWARD VOLTAGE Vp () REVERSE VOLTAGE Vp (V) Unit 2 Cr VR {= 1MHz Ta=25C TOTAL CAPACITANCE Cr (pF) 0.3 1 3 10 30 100 REVERSE VOLTAGE Vp (V) 1272