PD -95659 IRL3202PbF l l l l l HEXFET(R) Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free D VDSS = 20V RDS(on) = 0.016 G Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ID = 48A S The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C V GS VGSM EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew 48 30 190 69 0.56 10 14 Units A W W/C V V 270 29 6.9 5.0 -55 to + 150 mJ A mJ V/ns 300 (1.6mm from case ) 10 lbfin (1.1Nm) C Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units 0.50 1.8 62 C/W 1 7/30/04 IRL3202PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. 20 0.70 28 Typ. 0.029 9.8 100 63 82 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.019 VGS = 4.5V, ID = 29A 0.016 VGS = 7.0V, ID = 29A V VDS = VGS , ID = 250A S VDS = 16V, ID = 29A 25 VDS = 20V, VGS = 0V A 250 VDS = 10V, V GS = 0V, TJ = 150C 100 VGS = 10V nA -100 VGS = -10V 43 ID = 29A 12 nC VDS = 16V 13 VGS = 4.5V, See Fig. 6 VDD = 10V ID = 29A ns RG = 9.5, VGS = 4.5V RD = 0.3, Between lead, 4.5 6mm (0.25in.) nH G from package 7.5 and center of die contact 2000 VGS = 0V 800 pF VDS = 15V 290 = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 48 showing the A G integral reverse 190 S p-n junction diode. 1.3 V TJ = 25C, IS = 29A, VGS = 0V 68 100 ns TJ = 25C, IF = 29A 130 190 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by ISD 29A, di/dt 63A/s, VDD V(BR)DSS, Starting TJ = 25C, L = 0.64mH Pulse width 300s; duty cycle 2%. max. junction temperature. RG = 25, IAS = 29A. 2 TJ 150C www.irf.com IRL3202PbF 1000 1000 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V BOTTOM 2.00V BOTTOM 1.75V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 10 2.0V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 100 10 100 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 25 C 100 TJ = 150 C 10 V DS = 15V 20s PULSE WIDTH 3 4 Fig 3. Typical Transfer Characteristics www.irf.com 1 10 100 Fig 2. Typical Output Characteristics 1000 VGS , Gate-to-Source Voltage (V) 20s PULSE WIDTH TJ = 150 C VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 2.0V 1 0.1 VDS , Drain-to-Source Voltage (V) 2 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V BOTTOM 2.00V BOTTOM 1.75V TOP TOP 5 ID = 48A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL3202PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 3000 2500 Ciss 2000 1500 Coss 1000 Crss 500 0 1 10 15 ID = 29A VDS = 16V VGS , Gate-to-Source Voltage (V) 3500 12 9 6 3 0 100 0 10 VDS , Drain-to-Source Voltage (V) 1000 40 50 60 70 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 TJ = 150 C TJ = 25 C 10 1 0.2 V GS = 0 V 0.8 1.4 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) 2.6 100us 1ms 10 10ms TC = 25 C TJ = 150 C Single Pulse 1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRL3202PbF 600 EAS , Single Pulse Avalanche Energy (mJ) 50 ID , Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature ( C) TOP 500 BOTTOM ID 13A 18A 29A 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 0.018 VGS = 4.5V 0.016 0.014 VGS = 7.0V 0.012 0.025 0.020 ID = 48A 0.015 0.010 0.010 0 10 20 30 40 50 I D , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current 6 RDS(on), Drain-to-Source On Resistance ( ) R DS (on), Drain-to-Source On Resistance( ) IRL3202PbF 60 A 0.0 2.0 4.0 6.0 8.0 V GS , Gate-to-Source Voltage (V) Fig 13. On-Resistance Vs. Gate Voltage www.irf.com IRL3202PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- EMITTER 3- SOURCE 4 - DRAIN HEXFET 3 4- DRAIN 14.09 (.555) 13.47 (.530) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 www.irf.com 7 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/