Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 48
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 30 A
IDM Pulsed Drain Current 190
PD @TC = 25°C Power Dissipation 69 W
Linear Derating Factor 0.56 W/°C
VGS Gate-to-Source Voltage ± 10 V
VGSM Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
EAS Single Pulse Avalanche Energy270 mJ
IAR Avalanche Current29 A
EAR Repetitive Avalanche Energy6.9 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
7/30/04
IRL3202PbF
HEXFET® Power MOSFET
PD -95659
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
S
D
G
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case 1.8
RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W
RθJA Junction-to-Ambient 62
Thermal Resistance
VDSS = 20V
RDS(on) = 0.016Ω
ID = 48A
TO-220AB
Description
lAdvanced Process Technology
lOptimized for 4.5V-7.0V Gate Drive
lIdeal for CPU Core DC-DC Converters
lFast Switching
lLead-Free
www.irf.com 1
IRL3202PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient 0.029 V/°C Reference to 25°C, ID = 1mA
0.019 VGS = 4.5V, ID = 29A
0.016 ΩVGS = 7.0V, ID = 29A
VGS(th) Gate Threshold Voltage 0.70 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 28 S VDS = 16V, ID = 29A
25 µA VDS = 20V, VGS = 0V
250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 nA VGS = 10V
Gate-to-Source Reverse Leakage -100 VGS = -10V
QgTotal Gate Charge 43 ID = 29A
Qgs Gate-to-Source Charge 12 nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge 13 VGS = 4.5V, See Fig. 6
td(on) Turn-On Delay Time 9.8 VDD = 10V
trRise Time 100 ns ID = 29A
td(off) Turn-Off Delay Time 63 RG = 9.5Ω, VGS = 4.5V
tfFall Time 82 RD = 0.3Ω,
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance 2000 VGS = 0V
Coss Output Capacitance 800 pF VDS = 15V
Crss Reverse Transfer Capacitance 290 = 1.0MHz, See Fig. 5
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 29A, di/dt ≤ 63A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 0.64mH
RG = 25Ω, IAS = 29A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
trr Reverse Recovery Time 68 100 ns TJ = 25°C, IF = 29A
Qrr Reverse Recovery Charge 130 190 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
48
190
A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on) Static Drain-to-Source On-Resistance
IGSS
nH
LSInternal Source Inductance 7.5
LDInternal Drain Inductance 4.5
IDSS Drain-to-Source Leakage Current
IRL3202PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.75V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.0V
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
48A
1
10
100
1000
2345
V = 1 5 V
20µs PULSE WIDTH
DS
V , Gate-to-Sou rce Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.75V
V , Drain-to-Source Vol tage (V)
I , Drain-to-Source Current (A)
DS
D
2.0V
BOTTOM BOTTOM
IRL3202PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
500
1000
1500
2000
2500
3000
3500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHO RTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
1
10
100
1000
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
010 20 30 40 50 60 70
0
3
6
9
12
15
Q , Tota l Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D29A V = 16V
DS
1
10
100
1000
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRL3202PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Durati on (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
10
20
30
40
50
T , Case Temp erature ( C)
I , Drain Current (A)
°
C
D
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0
100
200
300
400
500
600
Starting T , Junction T e mperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
13A
18A
29A
IRL3202PbF
6www.irf.com
Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
010 20 30 40 50 60
0.010
0.012
0.014
0.016
0.018
R , Drain-to-Source On Resistance
I , Drai n Cu rre nt (A)
D
DS (on)
VGS = 4. 5V
VGS = 7. 0V
( Ω )
0
.010
0
.015
0
.020
0
.025
0.0 2.0 4.0 6.0 8.0
A
GS
V , Gate-to-S ource Voltage (V)
I = 48A
D
RDS(on), Drain-to-Source On Resistance ( Ω )
IRL3202PbF
www.irf.com 7
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2. 92 (.115)
2. 64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFO RMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS .
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD AS SIGNME NTS
IGBTs, CoPAC
K
1- GATE
2- COLLECT OR
3- EMITTER
4- COLLECT OR
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSEMBLY LINE "C"
THIS IS AN IRF1010
L OT CODE 1789
ASSEMB LED ON WW 19, 1997 PART NUMBE
R
ASSEMBLY
LOT CODE
DATE CODE
YEAR 7 = 1997
LINE C
WEEK 1 9
LOGO
RECTIFIER
INTERNATIONAL
Note: "P" in assembly line
position indicates "Lead-Free"
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
