CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 V
V
RMS
24 31 35 42 63 70 105 V
V
DC
35 45 50 60 90 100 150 V
I
F(AV)
A
I
RRM
A
0.95
0.92
1.02
0.98
0.1
5
dV/dt V/μs
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1308040 Version: J13
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
1.0 0.5
7.5
0.2
Typical thermal resistance 1.0 1.5
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
mA
15 10
Voltage rate of change (Rated V
R
)10000
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
V
0.7 0.77 0.84
0.6 0.67 0.70
0.82
Maximum instantaneous forward voltage (Note 2)
I
F
=15A, T
J
=25℃
I
F
=15A, T
J
=125℃
I
F
=30A, T
J
=25℃
I
F
=30A, T
J
=125℃
V
F
-0.94
0.73 - 0.82
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
200 A
Peak repetitive reverse surge current (Note 1)
SYMBOL
Maximum DC blocking voltage
Maximum average forward rectified current 30
Peak repetitive forward current
(Rated VR, Square wave, 20KHz) I
FRM
30
TO-220AB
MBR
30100
CT
MBR
30150
CT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER
MBR3035CT thru MBR30150CT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
MBR
3035
CT
MBR
3045
CT
MBR
3050
CT
MBR
3060
CT
MBR
3090
CT
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-220AB
Polarity: As marked
PART NO.
MBR30xxCT
PART NO.
MBR3060CT
MBR3060CT
MBR3060CT
(TA=25℃ unless otherwise noted)
Document Number: DS_D1308040 Version: J13
RATINGS AND CHARACTERISTICS CURVES
MBR3060CT C0G C0 G Green compound
MBR3060CTHC0 H C0 AEC-Q101 qualified
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
MBR3060CT C0 C0
C0 Suffix "G" TO-220AB 50 / Tube
Note 1: "xx" defines voltage from 35V (MBR3035CT) to 150V (MBR30150CT)
EXAMPLE
MBR3035CT thru MBR30150CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE PACKAGE PACKING
Prefix "H"
0
5
10
15
20
25
30
35
0 50 100 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1- FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
50
100
150
200
250
300
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125℃
TJ=25℃
TJ=75℃
MBR3035CT-MBR3045CT
MBR3050CT-MBR30150CT
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
IF-INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
MBR3035CT-MBR3045CT
MBR3050CT-MBR3060CT
MBR3090CT-MBR30100CT
MBR30150CT
Min Max Min Max
A - 10.50 - 0.413
B 2.62 3.44 0.103 0.135
C 2.80 4.20 0.110 0.165
D 0.68 0.94 0.027 0.037
E 3.54 4.00 0.139 0.157
F 14.60 16.00 0.575 0.630
G 13.19 14.79 0.519 0.582
H 2.41 2.67 0.095 0.105
I 4.42 4.76 0.174 0.187
J 1.14 1.40 0.045 0.055
K 5.84 6.86 0.230 0.270
L 2.20 2.80 0.087 0.110
M 0.35 0.64 0.014 0.025
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1308040 Version: J13
MARKING DIAGRAM
MBR3035CT thru MBR30150CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG
f=1.0MHz
Vsig=50mVp-p
MBR3035CT-MBR3045CT
MBR3050CT-MBR3060CT
MBR3090CT-MBR30150CT
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION. (sec)
FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308040 Version: J13
MBR3035CT thru MBR30150CT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Taiwan Semiconductor:
MBR30100CT MBR3035CT MBR3045CT MBR3050CT MBR3060CT MBR3090CT MBR30150CT C0
MBR3045CT C0 MBR3035CTHC0 MBR30150CTHC0 MBR3045CTHC0 MBR3090CTHC0 MBR3050CTHC0
MBR3060CTHC0 MBR30100CTHC0
