1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC
182 BC
183 BC
184 Unit
Collector–Emitter Voltage VCEO 50 30 30 Vdc
Collector–Base Voltage VCBO 60 45 45 Vdc
Emitter–Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.0
8.0 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 357 °C/W
Thermal Resistance, Junction to Case R
q
JC 125 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0) BC182
BC183
BC184
V(BR)CEO 50
30
30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(IC = 10
m
A, IE = 0) BC182
BC183
BC184
V(BR)CBO 60
45
45
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(IE = 100
m
A, IC = 0) V(BR)EBO 6.0 — — V
Collector Cutoff Current
(VCB = 50 V, VBE = 0) BC182
(VCB = 30 V, VBE = 0) BC183
BC184
ICBO —
—
—
0.2
0.2
0.2
15
15
15
nA
Emitter–Base Leakage Current
(VEB = 4.0 V, IC = 0) IEBO — — 15 nA
Order this document
by BC182/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V) BC182
BC183
BC184
(IC = 2.0 mA, VCE = 5.0 V) BC182
BC183
BC184
(IC = 100 mA, VCE = 5.0 V) BC182
BC183
BC184
hFE 40
40
100
120
120
250
80
80
130
—
—
—
—
—
—
—
—
—
—
—
—
500
800
800
—
—
—
—
Collector–Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)(1)
VCE(sat) —
—0.07
0.2 0.25
0.6
V
Base–Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA)(1) VBE(sat) — — 1.2 V
Base–Emitter On Voltage
(IC = 100 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)(1)
VBE(on) —
0.55
—
0.5
0.62
0.83
—
0.7
—
V
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) BC182
BC183
BC184
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC182
BC183
BC184
fT—
—
—
150
150
150
100
120
140
200
240
280
—
—
—
—
—
—
MHz
Common Base Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz) Cob — — 5.0 pF
Common Base Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cib — 8.0 — pF
Small–Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC182
BC183
BC184
BC182A
BC182B
hfe 125
125
240
125
240
—
—
—
—
—
500
900
900
260
500
—
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz)
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ, BC184
f = 1.0 kHz, f = 200 Hz) BC182
BC183
BC184
NF
—
—
—
—
2.0
2.0
2.0
2.0
4.0
10
10
4.0
dB
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.2
0.3
0.4
0.6
0.8
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
hFE, NORMALIZED DC CURRENT GAIN
VCE = 10 V
TA = 25
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00.20.1 0.3 0.5 0.7 1.0 2.0 3.0 5.07.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
TA = 25
°
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
0.5 1.00.7 2.0 3.0 5.0 7.0 10 20 30 50
IC, COLLECTOR CURRENT (mAdc)
Figure 3. Current–Gain — Bandwidth Product
fT, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
VCE = 10 V
TA = 25
°
C
TA = 25
°
C
Cib
Cob
rb, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120 100.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Base Spreading Resistance
VCE = 10 V
f = 1.0 kHz
TA = 25
°
C
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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BC182/D
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