2007-04-20
1
BF2030...
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
G2
G1
GND
AGC
RF
Input
Drain RF Output
+ DC
VGG
RG1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin Human Body Model
Type Package Pin Configuration Marking
BF2030
BF2030R
BF2030W
SOT143
SOT143R
SOT343
1= S
1= D
1= D
2=D
2=S
2=S
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
NDs
NDs
NDs
Maximum Ratings
Parameter Symbol Value Unit
Drain-source voltage VDS 8 V
Continuous drain current ID40 mA
Gate 1/ gate 2-source current ±IG1/2SM 10
Gate 1 (external biasing) +VG1SE 6 V
Total power dissipation
TS ≤ 76 °C, BF2030, BF2030R
TS ≤ 94 °C, BF2030W
Ptot
200
200
mW
Storage temperature Tstg -55 ... 150 °C
Channel temperature Tch 150
1Pb-containing package may be available upon special request
2007-04-20
2
BF2030...
Thermal Resistance
Parameter Symbol Value Unit
Channel - soldering point1)
BF2030/ BF2030R
BF2030W
Rthchs
≤370
≤280
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 20 µA, VG1S = 0 , VG2S = 0 V(BR)DS 10 - - V
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 , VDS = 0 +V(BR)G1SS 6 - 15
Gate2-source breakdown voltage
+IG2S = 10 mA, VG1S = 0 , VDS = 0 +V(BR)G2SS 6 - 15
Gate1-source leakage current
VG1S = 5 V, VG2S = 0 , VDS = 0 +IG1SS - - 50 nA
Gate2-source leakage current
VG2S = 5 V, VG1S = 0 , VDS = 0 +IG2SS - - 50
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V IDSS - - 50 µA
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩIDSX - 12 - mA
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA VG1S(p) 0.3 0.5 - V
Gate2-source pinch-off voltage
VDS = 5 V, ID = 20 µA VG2S(p) 0.3 0.6 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2007-04-20
3
BF2030...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Forward transconductance
VDS = 5 V, ID = 10 mA, VG2S = 4 V gfs 27 31 - mS
Gate1 input capacitance
VDS = 5 V, ID = 10 mA, VG2S = 4 V,
f = 10 MHz
Cg1ss - 2.4 2.8 pF
Output capacitance
VDS = 5 V, ID = 10 mA, VG2S = 4 V,
f = 10 MHz
Cdss - 1.3 -
Power gain
VDS = 5 V, ID = 10 mA, VG2S = 4 V,
f = 800 MHz
Gp20 23 - dB
Noise figure
VDS = 5 V, ID = 10 mA, VG2S = 4 V,
f = 800 MHz
F- 1.5 2.2 dB
Gain control range
VDS = 5 V, VG2S = 4...0 V, f = 800 MHz ∆Gp40 50 -
2007-04-20
4
BF2030...
Total power dissipation Ptot = ƒ(TS)
BF2030, BF2030R
0 15 30 45 60 75 90 105 120 °C 150
TS
0
20
40
60
80
100
120
140
160
180
mW
220
Ptot
Total power dissipation Ptot = ƒ(TS)
BF2030W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
20
40
60
80
100
120
140
160
180
mA
220
Ptot
Drain current ID = ƒ(IG1)
VG2S = 4V
0 10 20 30 40 50 60 70 80 µA 100
IG1
0
2
4
6
8
10
12
14
16
18
20
22
24
mA
28
ID
Output characteristics ID = ƒ(VDS)
VG2S = 4V
VG1S = Parameter
0 1 2 3 4 5 6 7 8 V10
VDS
0
2
4
6
8
10
12
14
16
mA
20
ID
1.4V
1.3V
1.2V
1.1V
1V
0.8V
2007-04-20
5
BF2030...
Gate 1 current IG1 = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
0 0.4 0.8 1.2 1.6 2 2.4 V3
VDS
0
15
30
45
60
75
90
105
120
135
150
165
180
µA
210
IG1
4V
3.5V
3V
2.5V
2V
Gate 1 forward transconductance
gfs = ƒ(ID)
VDS = 5V, VG2S = Parameter
0 4 8 12 16 20 24 mA 30
ID
0
5
10
15
20
25
30
mS
40
gfs
4V
3V
2.5V
2V
Drain current ID = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V2
VG1S
0
2
4
6
8
10
12
14
16
18
20
22
24
mA
30
ID
4V
3V
2V
1.5V
Drain current ID = ƒ(VGG)
VDS = 5V, VG2S = 4V, RG1 = 100kΩ
(connected to VGG, VGG=gate1 supply voltage)
0 0.5 1 1.5 2 2.5 3 3.5 4 V5
VGG
0
1
2
3
4
5
6
7
8
9
10
11
mA
13
ID
2007-04-20
6
BF2030...
Drain current ID = ƒ(VGG)
VG2S = 4V
RG1 = Parameter in kΩ
0123456V8
VGG=VDS
0
2
4
6
8
10
12
14
16
18
20
22
24
mA
28
ID
70
80
100
120
Crossmodulation Vunw = (AGC)
VDS = 5 V
0 10 20 30 40 dB 55
AGC
80
85
90
95
100
105
110
dBµV
120
Vunw
2007-04-20
7
BF2030...
Cossmodulation test circuit
RG1
4n7
4n7
RL
50Ω
50 Ω
RGEN
50Ω
VGG
R1
10kΩ
VAGC VDS
4n7
4n7
2.2 uH
Semibiased
2007-04-20
8
BF2030...
Package SOT143
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
RFs
2005, June
Date code (YM)
BFP181
Type code
56
Pin 1
0.8 0.81.2
0.9 1.1 0.9
1.2
0.8 0.8
0.8-0.05
+0.1
1.9
1.7
±0.1
2.9
+0.1
-0.05
0.4
0.1 MAX.
12
34
0.25 MB
±0.1
1
10˚ MAX.
0.15 MIN.
0.2 A
M
2.4
±0.15
0.2
10˚ MAX.
A
1.3
±0.1
0...8˚
0.08...0.15
2.6
4
3.15
Pin 1
8
0.2
1.15
B
Manufacturer
2007-04-20
9
BF2030...
Package SOT143R
1.1
0.8 0.81.2
0.90.9
0.8 0.8 1.2
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2.6
4
3.15
Pin 1
8
0.2
1.15
Reverse bar
2005, June
Date code (YM)
BFP181R
Type code
Pin 1
1.9
1.7
0.4
-0.05
+0.1
+0.1
-0.05
0.8
B
0.25
M
B
2.9
±0.1
0.2
12
43
A
0˚... 8˚
10˚
10˚
0.1 MAX.
0.15 MIN.
1.3±0.1
2.4±0.15
1±0.1
0.08...0.15
A
M
0.2
MAX.
MAX.
Manufacturer
2007-04-20
10
BF2030...
Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3+0.1
2±0.2 ±0.1
0.9
12
34 A
+0.1
0.6 A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2007-04-20
11
BF2030...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
