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BC337 / BC338 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC337 / BC338 Rev. 1.5
September 2015
BC337 / BC338
NPN Epitaxial Silicon Transistor
Features
Switching and Amplifier Applications
Suitable for AF-Driver Stages and Low-Power Output Stages
Complement to BC327 / BC328
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
BC33716BU BC33716 TO-92 3L Bulk
BC33716TA BC33716 TO-92 3L Ammo
BC33716TFR BC33716 TO-92 3L Tape and Reel
BC33725BU BC33725 TO-92 3L Bulk
BC33725TA BC33725 TO-92 3L Ammo
BC33725TAR BC33725 TO-92 3L Ammo
BC33725TF BC33725 TO-92 3L Tape and Reel
BC33725TFR BC33725 TO-92 3L Tape and Reel
BC33740BU BC33740 TO-92 3L Bulk
BC33740TA BC33740 TO-92 3L Ammo
BC33825TA BC33825 TO-92 3L Ammo
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage BC337 50 V
BC338 30
VCEO Collector-Emitter Voltage BC337 45 V
BC338 25
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 800 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 to 150 °C
1. Collector
123123
Straight Lead Bent Lead
TO-92
Bulk Packing Tape & Reel
Ammo Packing
2. Base
3. Emitter
BC337 / BC338 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC337 / BC338 Rev. 1.5 2
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Value Unit
PDPower Dissipation 625 mW
Derate Above 25°C5.0mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter
Breakdown Voltage BC337 IC = 10 mA, IB = 0 45 V
BC338 25
BVCES Collector-Emitter
Breakdown Voltage BC337 IC = 0.1 mA, VBE = 0 50 V
BC338 30
BVEBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 5 V
ICES Collector Cut-Off Curren t BC337 VCE = 45 V, IB = 0 2 100 nA
BC338 VCE = 25 V, IB = 0 2 100
hFE1 DC Current Gain VCE = 1 V, IC = 100 mA 100 630
hFE2 VCE = 1 V, IC = 300 mA 60
VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.7 V
VBE(on) Base-Emitter On Voltage VCE = 1 V, IC = 300 mA 1.2 V
fTCurrent Gain Bandwidth Product VCE = 5 V, IC = 10 mA,
f = 50 MHz 100 MHz
Cob Output Capacitance VCB = 10 V, IE = 0,
f = 1 MHz 12 pF
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60 ~ 100 ~ 170 ~
BC337 / BC338 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC337 / BC338 Rev. 1.5 3
Physical Dimensions
Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
BC337 / BC338 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC337 / BC338 Rev. 1.5 4
Physical Dimensions (Continued)
Figure 2. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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