IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB80N50Q2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 50 65 S
Ciss 15 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1610 pF
Crss 300 pF
td(on) Resistive Switching Times 29 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 25 ns
td(off) RG = 1Ω (External) 60 ns
tf11 ns
Qg(on) 250 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 80 nC
Qgd 120 nC
RthJC 0.13 °C/W
RthCK 0.13 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 80 A
ISM Repetitive; 320 A
pulse width limited by TJM
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1.4 μC
IRM 12 A
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
PLUS264TM (IXFB) Outline
IF = 25A, VGS = 0V
-di/dt = 100 A/μs
VR = 100 V