SGA6589Z SGA6589ZDC to 3500MHz, Cascadable Low Noise, High Gain SiGe HBT DC to 3500MHz, CASCADABLE LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-89 Product Description Features The SGA6589Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching(R) Applied 0 InGaP HBT 24 Gain (dB) Si CMOS -10 IRL ORL 16 -20 8 -30 Return Loss (dB) SiGe BiCMOS High Gain: 20dB at 1950MHz Cascadable 50 Operates from Single Supply Low Thermal Resistance Package Applications GAIN GaAs pHEMT VD= 4.9 V, ID= 80 mA (Typ.) 32 SiGe HBT GaAs MESFET Gain & Return Loss vs. Frequency GaAs HBT Si BiCMOS PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Si BJT GaN HEMT 0 -40 0 InP HBT 1 RF MEMS 2 3 Frequency (GHz) 4 5 LDMOS Parameter Small Signal Gain Min. 23.0 Output Power at 1dB Compression Output Third Intercept Point Specification Typ. 25.5 20.0 18.2 21.5 19.0 32.5 32.0 4000 Max. 28.1 Unit dB dB dB dBm dBm dBm dBm MHz Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >9dB Bandwidth Determined by Return Loss Input Return Loss 13.1 dB 1950MHz Output Return Loss 9.2 dB 1950MHz Noise Figure 3.0 dB 1950MHz Device Operating Voltage 4.5 4.9 5.3 V Device Operating Current 72 80 88 mA Thermal Resistance 97 C/W (Junction - Lead) Test Conditions: VS =8V, ID =75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =39, TL =25C, ZS =ZL =50 RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS111014 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGA6589Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 160 mA Max Device Voltage (VD) 7 V +16 dBm +150 C -40 to +85 C Max Storage Temp +150 C Moisture Sensitivity Level MSL 2 Max RF Input Power Max Junction Temp (TJ) Operating Temp Range (TL) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Typical Performance at Key Operating Frequencies Parameter Unit 100 MHz 500 MHz 850 MHz 1950 MHz Small Signal Gain dB 28.4 27.1 25.2 19.8 Output Third Order Intercept Point dBm 32.1 32.5 32.0 Output Power at 1dB Compression dBm 21.6 21.5 19.0 Input Return Loss dB 13.9 15.0 15.6 13.1 Output Return Loss dB 16.1 13.5 11.4 9.2 Reverse Isolation dB 30.3 29.8 28.7 24.3 Noise Figure dB 2.5 2.5 2.9 Test Conditions: VS =8V, ID =80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL =25C, ZS =ZL =50 OIP3 vs. Frequency 2400 MHz 3500 MHz 18.2 30.3 17.8 12.4 9.4 23.1 3.3 15.1 11.4 10.6 19.2 P1dB vs. Frequency VD= 4.9 V, ID= 80 mA VD= 4.9 V, ID= 80 mA 24 40 22 P1dB (dBm) OIP3 (dBm) 35 30 25 20 18 16 TL=+25C TL=+25C 14 20 0 0.5 1 1.5 2 Frequency (GHz) 2.5 0 3 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Noise Figure vs. Frequency VD=4.9 V, ID= 80 mA Noise Figure (dB) 5 4 3 2 TL=+25C 1 0 0 2 of 6 0.5 1 1.5 2 Frequency (GHz) 2.5 3 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111014 SGA6589Z |S21| vs. Frequency |S11| vs. Frequency VD= 4.9 V, ID= 80mA 32 -10 |S11| (dB) 24 |S21| (dB) VD= 4.9 V, ID= 80 mA 0 16 8 0 0 1 2 3 4 Frequency (GHz) -30 +25C -40C +85C TL 5 -20 -40 6 0 1 |S12| vs. Frequency 6 -10 |S22| (dB) |S12| (dB) 5 VD= 4.9 V, ID= 80 mA 0 -15 -20 -25 -30 0 1 2 3 4 Frequency (GHz) 5 -20 -30 +25C -40C +85C TL DS111014 2 3 4 Frequency (GHz) |S22| vs. Frequency VD= 4.9 V, ID= 80 mA -10 +25C -40C +85C TL +25C -40C +85C TL -40 6 0 1 2 3 4 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 6 3 of 6 SGA6589Z Pin 1 2, 4 Function RF IN GND 3 RF OUT/BIAS Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Application Schematic Frequency (Mhz) VS R BIAS 1 uF 1000 pF CD LC 1 SGA6589Z 3 CB 2 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH Recommended Bias Resistor Values for ID=80mA RBIAS=( VS-VD ) / ID 4 RF in Reference Designator RF out CB Supply Voltage(VS) RBIAS 6V 12 8V 39 10 V 12 V 62 91 Note: RBIAS provides DC bias stability over temperature. Evaluation Board Layout Mounting Instructions: 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1 ounce copper on both sides. 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111014 SGA6589Z Suggested Pad Layout Preliminary Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. DS111014 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 SGA6589Z Part Identification Ordering Information Ordering Code 6 of 6 Description SGA6589Z 13" Reel with 3000 pieces SGA6589ZSQ Sample bag with 25 pieces SGA6589ZSR 7" Reel with 100 pieces SGA6589ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS111014