SGA6589ZSR - RF Micro Devices, Inc. (RFMD)

Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SGA6589Z

DC to 3500MHz, CASCADABLE LOW NOISE,

HIGH GAIN SiGe HBT

The SGA6589Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

ton configuration featuring one-micron emitters provides high FT and

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

012345

Freque ncy ( GHz)

Gain (dB)

-40

-30

-20

-10

Return Loss (dB)

GAIN

IRL

ORL

Gain & Return Loss vs. Frequency

VD= 4.9 V, ID= 80 mA (T yp.)

High Gain: 20dB at 1950MHz

Cascadable 50

Operates from Single Supply

Low Thermal Resistance

Package

Applications

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

Wireless Data, Satellite

DS111014



Package: SOT-89

SGA6589ZDC

to 3500MHz,

Cascadable

Low Noise,

High Gain SiGe

HBT

Parameter Specification Unit Condition

Min. Typ. Max.

Small Signal Gain 23.0 25.5 28.1 dB 850MHz

20.0 dB 1950MHz

18.2 dB 2400MHz

Output Power at 1dB Compression 21.5 dBm 850MHz

19.0 dBm 1950MHz

Output Third Intercept Point 32.5 dBm 850MHz

32.0 dBm 1950MHz

Bandwidth Determined by Return

Loss 4000 MHz >9dB

Input Return Loss 13.1 dB 1950MHz

Output Return Loss 9.2 dB 1950MHz

Noise Figure 3.0 dB 1950MHz

Device Operating Voltage 4.5 4.9 5.3 V

Device Operating Current 72 80 88 mA

Thermal Resistance

(Junction - Lead) 97 °C/W

Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =39, TL=25°C, ZS=ZL=50

2 of 6 DS111014

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA6589Z

Typical Performance at Key Operating Frequencies

Absolute Maximum Ratings

Parameter Rating Unit

Max Device Current (ID)160mA

Max Device Voltage (VD)7V

Max RF Input Power +16 dBm

Max Junction Temp (TJ)+150°C

Operating Temp Range (TL) -40 to +85 °C

Max Storage Temp +150 °C

Moisture Sensitivity Level MSL 2

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

IDVD<(T

J-TL)/RTH, j-l

Parameter Unit 100

MHz

500

MHz

850

MHz

1950

MHz

2400

MHz

3500

MHz

Small Signal Gain dB 28.4 27.1 25.2 19.8 18.2 15.1

Output Third Order Intercept Point dBm 32.1 32.5 32.0 30.3

Output Power at 1dB Compression dBm 21.6 21.5 19.0 17.8

Input Return Loss dB 13.9 15.0 15.6 13.1 12.4 11.4

Output Return Loss dB 16.1 13.5 11.4 9.2 9.4 10.6

Reverse Isolation dB 30.3 29.8 28.7 24.3 23.1 19.2

Noise Figure dB 2.5 2.5 2.9 3.3

Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

OIP3 vs. Frequency

VD= 4.9 V, ID= 80 mA P1dB vs. Frequency

VD= 4.9 V, ID= 80 mA

00.511.522.53

Frequ en cy (GHz)

OIP

(dBm)

0 0.5 1 1.5 2 2.5 3

Frequency (GHz)

1dB

(dBm)

TL=+25ºC TL=+25ºC

Noise Figure vs. Frequency

VD=4.9 V, ID= 80 mA

00.511.522.53

Frequency (GHz)

Noise Figure (dB)

TL=+25ºC

3 of 6DS111014

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA6589Z

-40

-30

-20

-10

0123456

Frequ en cy (GHz)

|S22| (dB)

+25°C

-40°C

+85°C

-30

-25

-20

-15

-10

0123456

Frequ en cy (GHz)

|S12| (dB)

+25°C

-40°C

+85°C

-40

-30

-20

-10

0123456

Frequ en cy (GHz)

|S11| (dB)

+25°C

-40°C

+85°C

0123456

Frequency (GHz)

|S21| (dB)

+25°C

-40°C

+85°C

|S12| vs. Frequency

VD= 4.9 V, ID= 80 mA |S22| vs. Frequency

VD= 4.9 V, ID= 80 mA

|S11| vs. Frequency

VD= 4.9 V, ID= 80 mA

|S21| vs. Frequency

VD= 4.9 V, ID= 80mA

TLTL

4 of 6 DS111014

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA6589Z

Application Schematic

Evaluation Board Layout

Mounting Instructions:

1. Solder the copper pad on the backside of the device package to the ground plane.

2. Use a large ground pad area with many plated through-holes as shown.

3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1

ounce copper on both sides.

Pin Function Description

1RF IN

RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.

2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-

ble.

3RF OUT/BIAS

RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-

ation.

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RF in RF out

1 uF

BIAS

1000

SGA6589Z

5 of 6DS111014

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA6589Z

Suggested Pad Layout

Package Drawing

Dimensions in inches (millimeters)

Refer to drawing posted at www.rfmd.com for tolerances.

Preliminary

6 of 6 DS111014

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA6589Z

Part Identification

Ordering Information

Ordering Code Description

SGA6589Z 13” Reel with 3000 pieces

SGA6589ZSQ Sample bag with 25 pieces

SGA6589ZSR 7” Reel with 100 pieces

SGA6589ZPCK1 850MHz, 8V Operation PCBA with 5-piece sample bag