CFY66-10PS - Infineon Technologies

CFY66

Semiconduc tor Gr oup 1 of 7 Draft D , Jul. 98

HiRel

K-Band

GaAs Super Low Noise HEMT

•

HiRel

Discrete and Microwave

Semiconductor

• Conventional AlGaAs/GaAs HEMT

(For new design we recommend to use our

pseudo-morphic HEMT CFY67)

• For professional super low-noise amplifiers

• For frequencies from 500 MHz to > 20 GHz

• Hermetically sealed microwave package

• Super low noise figure, high associated gain

• Space Qualified

ESA/SCC Detail Spec. No.: 5613/002,

Type Variant No.s 01 to 04

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Pin Configuration Package

1234

CFY66-08 (ql)

CFY66-08P (ql)

CFY66-10 (ql)

CFY66-10P (ql)

- see below G S D S Micro-X

CFY66-nnl: specifies gain and output power levels (see electrical characteristics)

(ql) Quality Level: P: Professional Quality, Ordering Code: on request

H: High Rel Quality, Ordering Code: on request

S: Space Quality, Ordering Code: on request

ES: ESA Space Quality, Ordering Code: on request

(see order instructions for ordering example)

CFY66

Semiconduc tor Gr oup 2 of 7 Draft D , Jul. 98

Maximum Ratings

Parameter Symbol Values Unit

Drain-source voltage VDS 3.5 V

Drain-gate voltage VDG 4.5 V

Gate-source voltage (reverse / forward) VGS - 3... + 0.5 V

Drain current ID60 mA

Gate forward current IG2mA

RF Input Power, C- and X-Band 1) PRF,in + 10 dBm

Junction temperature TJ150 °C

Storage temperature range Tstg - 65... + 150 °C

Total power dissipation 2) Ptot 200 mW

Soldering temperature 3) Tsol 230 °C

Thermal Resistance

Junction-soldering point Rth JS ≤ 515 (tbc.) K/W

Notes.:

1) For VDS ≤ 2 V. For VDS > 2 V, derating is required.

2) At TS = + 47 °C. For TS > + 47 °C derating is required.

3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have

elapsed.

CFY66

Semiconduc tor Gr oup 3 of 7 Draft D , Jul. 98

Electrical Characteristics (at TA=25°C; unless otherwise specified)

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Drain-source saturation current

VDS = 2 V, VGS = 0 V IDss 10 30 60 mA

Gate threshold voltage

VDS = 2 V, ID = 1 mA -VGth 0.2 0.7 2.0 V

Drain current at pinch-off

VDS = 1.5 V, VGS = - 3 V IDp - < 50 - µA

Gate leakage current at pinch-off

VDS = 1.5 V, VGS = - 3 V -IGp - < 50 200 µA

Transconductance

VDS = 2 V, ID = 10 mA gm10 40 55 - mS

Gate leakage current at operation

VDS = 2 V, ID = 10 mA -IG10 - < 0.5 2 µA

Thermal resistance

junction to soldering point Rth JS - 450 - K/W

CFY66

Semiconduc tor Gr oup 4 of 7 Draft D , Jul. 98

Electrical Characteristics (continued)

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Noise figure 1)

VDS = 2 V, ID = 10 mA, f = 12 GHz NF dB

CFY66-08, -08P - 0.7 0.8

CFY66-10, 10P - 0.9 1.0

Associated gain. 1)

VDS = 2 V, ID = 10 mA, f = 12 GHz GadB

CFY66-08, -08P 10.0 11.0 -

CFY66-10, 10P 9.5 10.5 -

Output power at 1 dB gain compression 2)

VDS = 2 V, ID = 20 mA, f = 12 GHz P1dB dBm

CFY66-06, -08, -10 - 11.0 -

CFY66-08P, -10P 10.0 11.0 -

Notes.:

1) Noise figure / sssociated gain characteristics given for minimum noise figure matching

conditions (fixed generic matching, no fine-tuning).

2) Output power characteristics given for optimum output power matching conditions (fixed

generic matching, no fine-tuning).

CFY66

Semiconduc tor Gr oup 5 of 7 Draft D , Jul. 98

Typical Common Source S-Parameters

CFY66-08: VDS = 2 V, ID = 10 m A, Zo = 50 Ω

f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S

MAG

[GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB]

1,0 0,990 -21 4,451 161 0,0260 70 0,649 -16 0,14 22,3

2,0 0,960 -39 4,282 144 0,0460 61 0,623 -29 0,19 19,7

3,0 0,920 -57 4,148 126 0,0650 49 0,589 -43 0,27 18,0

4,0 0,880 -77 3,979 108 0,0830 37 0,560 -57 0,32 16,8

5,0 0,830 -95 3,727 93 0,0940 25 0,532 -70 0,39 16,0

6,0 0,790 -111 3,444 78 0,1000 14 0,506 -83 0,47 15,4

7,0 0,749 -124 3,206 64 0,1060 6 0,490 -94 0,55 14,8

8,0 0,720 -137 3,029 50 0,1110 -3 0,463 -103 0,63 14,4

9,0 0,690 -150 2,907 38 0,1130 -11 0,440 -113 0,70 14,1

10,0 0,670 -165 2,845 25 0,1190 -20 0,420 -121 0,74 13,8

11,0 0,649 179 2,787 11 0,1210 -28 0,400 -130 0,79 13,6

12,0 0,628 164 2,699 -3 0,1200 -37 0,385 -143 0,84 13,5

13,0 0,610 151 2,614 -16 0,1200 -46 0,370 -153 0,91 13,4

14,0 0,597 138 2,584 -28 0,1190 -55 0,355 -162 0,96 13,4

15,0 0,584 121 2,550 -42 0,1180 -66 0,340 -172 1,01 13,3 12,8

16,0 0,580 104 2,484 -56 0,1170 -76 0,330 178 1,05 13,3 11,9

17,0 0,580 89 2,461 -71 0,1150 -87 0,325 169 1,08 13,3 11,5

18,0 0,580 74 2,456 -86 0,1160 -100 0,320 160 1,09 13,3 11,4

Typical Common Source Noise-Parameters

CFY66-08: VDS = 2 V, ID = 10 m A, Zo = 50 Ω

fNF

min

|Γopt|<Γopt R

[GHz] [dB] [magn] [angle] [Ω]

1 0,27 0,770 16 17,85

2 0,31 0,720 30 16,55

3 0,35 0,672 43 15,27

4 0,38 0,634 57 13,75

5 0,42 0,604 71 11,99

6 0,46 0,578 85 10,04

7 0,50 0,558 100 8,15

8 0,55 0,541 114 6,30

9 0,60 0,528 128 4,74

10 0,65 0,517 143 3,45

11 0,70 0,506 157 2,58

12 0,74 0,496 171 2,16

13 0,79 0,485 -175 2,27

14 0,85 0,472 -160 2,88

15 0,89 0,457 -146 3,99

16 0,95 0,437 -132 5,59

17 1,00 0,415 -118 7,63

18 1,06 0,389 -102 9,96

CFY66

Semiconduc tor Gr oup 6 of 7 Draft D , Jul. 98

Order Instructions:

Full type variant including quality level must be specified by the orderer. For

HiRel

Discrete

and Microwave Semiconductors the ordering code specifies device family and quality level

only.

Ordering Form: Ordering Code: Q..........

CFY66 -(nnl) (ql)

-(nnl) Noise Figure/Gain and/or Power Level

(ql): Quality Level

Ordering Example: Ordering Code: (on request)

CFY66-08P ES

For CFY66, Noise Figure/Gain/Power Level 08P:

NF < 0.8 dB, Ga > 10.0 dB, P1dB > 10 dBm @ 12 GHz

in ESA Space Quality Level

Further Informations:

See our WWW-Pages:

- Discrete and RF-Semiconductors (Small Signal Semiconductors)

www.siemens.de/semiconductor/products/35/35.htm

HiRel

Discrete and Microwave Semiconductors

www.siemens.de/semiconductor/products/35/353.htm

Please contact also our marketing division :

Tel.: ++89 6362 4480

Fax.: ++89 6362 5568

e-mail: martin.wimmers@siemens-scg.com

Address: Siemens Semiconductors,

High Frequency Products Marketing,

P.O.Box 801709,

D-81617 Munich

CFY66

Semiconduc tor Gr oup 7 of 7 Draft D , Jul. 98

Micro-X Package Published by Siemens Semiconductors, High Frequency

Products Marketing, P.O.Box 801709, D-81617 Munich.

As far as patents or other rights of third parties are

concerned, liability is only assumed for components per se,

not for applications, processes and circuits implemented

within components or assemblies.

The information describes the type of component and shall

not be considered as assured characteristics.

Terms of delivery and rights to change design reserved.

For questions on technology, delivery and prices please

contact the Offices of Semiconductor Group in Germany or

the Siemens Companies and Representatives woldwide

(see address list).

Due to technical requirements components may contain

dangerous substances. For information on the type in

question please contact your nearest Siemens Office,

Semiconductor Group.

Siemens Semiconductors is a certified CECC and QS9000

manufacturer (this includes ISO 9000).