A43L2616B
1M X 16 Bit X 4 Banks Synchronous DRAM
(January, 2014, Version 1.4) AMIC Technology, Corp.
Document Title
1M X 16 Bit X 4 Banks Synchronous DRAM
Revision History
Rev. No. History Issue Date Remark
0.0 Initial issue August 24, 2006 Preliminary
0.1 Change ICC1 to 70mA February 14, 2007
Change ICC6 to 1.5mA
0.2 Add 54B Pb-Free CSP package type March 15, 2007
1.0 Final version release April 3, 2007 Final
1.1 Change BS0 to BA0, BS1 to BA1 August 15, 2007
1.2 Add part numbering scheme February 15, 2008
1.3 Erase 54B CSP package type December 16, 2009
1.4 Change ICC6 to 5mA January 22, 2014
A43L2616B
1M X 16 Bit X 4 Banks Synchronous DRAM
(January, 2014, Version 1.4) 1 AMIC Technology, Corp.
Feature
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks / Pulse RAS
MRS cycle with address key programs
- CAS Lat ency (2,3)
- Burst Length (1,2,4,8 & full page)
- Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Clock Frequency: 166MHz @ CL=3
143MHz @ CL=3
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
Commercial Temperature Operation : 0 °C~70°C
Industrial Temperature Operation : -40°C~85°C for –U
grade
Available in 54-pin TSOP(II) package
Package is available to lead free (-F series)
All Pb-free (Lead-free) products are RoHS compliant
General Description
The A43L2616B is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 X 1,048,576 words by
16 bits, fabricated with AMIC’s high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock.
I/O transactions are possible on every clock cycle. Range
of operating frequencies, programmable latencies allows
the same device to be useful for a variety of high
bandwidth, high performance memory system
applications.
Pin Configuration
TSOP (II)
A43L2616BV
54 53 52 51 50 49 48 47 46 45 4344 42 41 40 39 38 37 36 35 34 33 32 31 30
12345678910 1211 13 14 15 16 17 18 19 20 21 22 23 24 25
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
UDQM
CK
CKE
NC
A9
A8
A7
A6
A5
A4
VSS
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
A10/AP
BA1
BA0
A0
A1
A2
26 27
2829
A3
VDD
A11
NC
A43L2616B
(January, 2014, Version 1.4) 2 AMIC Technology, Corp.
Block Diagram
Bank Select
Row Buffer
Refresh Counter
Addr ess Register
Row Decoder Column Buffer
LCBR
LRAS
CLK
ADD
Timing Register
Data Input Register
1M X 16
Sense AMP
Column Decoder
Latency & Burst Length
Programming Register
LRAS
LCAS
LRAS LCBR LWE LWCBR DQM
CLK CKE CS RAS CAS WE DQM
I/O Control Output Buffer
LWE
DQM
DQi
1M X 16
1M X 16
1M X 16
A43L2616B
(January, 2014, Version 1.4) 3 AMIC Technology, Corp.
Pin Descriptions
Symbol Name Description
CLK System Clock Active on the positive going edge to sample all inputs.
CS Chip Select Disables or Enables device operation by masking or enabling all inputs except
CLK, CKE and L(U)DQM
CKE Clock Enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one clock + tss prior to new command.
Disable input buffers for power down in standby.
A0~A11 Address Row / Column addresses are multiplexed on the same pins.
Row address : RA0~RA11, Column address: CA0~CA7
BA0, BA1 Bank Select Address Selects bank to be activated during row address latch time.
Selects band for read/write during column address latch time.
RAS Row Address Strobe Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS Column Address
Strobe Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
WE Write Enable Enables write operation and Row precharge.
L(U)DQM Data Input/Output
Mask Makes data output Hi-Z, t SHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
DQ0-15 Data Input/Output Data inputs/output s are multiplexed on the same pins.
VDD/VSS Power
Supply/Ground Power Supply: +3.3V±0.3V/Ground
VDDQ/VSSQ Data Output
Power/Ground Provide isolated Power/Ground to DQs for improved noise immunity.
NC/RFU No Connection
A43L2616B
(January, 2014, Version 1.4) 4 AMIC Technology, Corp.
Absolute Maximum Ratings*
Voltage on any pin relative to VSS (Vin, Vout ) . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to +4.6V
Voltage on VDD supply relative to VSS (VDD, VDDQ )
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-1.0V to +4.6V
Storage Temperature (TSTG) . . . . . . . . . . -55°C to +150°C
Soldering Temperature X Time (TSOLDER) . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C X 10sec
Power Dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . . .1W
Short Circuit Current (Ios) . . . . . . . . . . . . . . . . . . . . 50mA
*Comments
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended
operating condition.
Exposure to higher than recommended voltage for extended
periods of time could affect device reliability.
Capacitance (TA=25°C, f=1MHz)
Parameter Symbol Condition Min Typ Max Unit
Input Capacitance CI1 A0 to A11, BA0, BA1 2.5 3.8 pF
CI2
CLK, CKE, CS , RAS ,CAS ,WE ,
DQM 2.5 3.8 pF
Data Input/Output Capacitance CI/O DQ0 to DQ15 4 6.5 pF
DC Electrical Characteristics
Recommend operating conditions (Voltage referenced to VSS = 0V, TA = 0ºC to +70ºC or TA = -40ºC to +85ºC)
Parameter Symbol Min Typ Max Unit Note
Supply Voltage VDD,VDDQ 3.0 3.3 3.6 V
Input High Voltage VIH 2.0 3.0 VDD+0.3 V
Input Low Voltage VIL -0.3 0 0.8 V Note 1
Output High Voltage VOH 2.4 - - V IOH = -2mA
Output Low Voltage VOL - - 0.4 V IOL = 2mA
Input Leakage Current IIL -5 - 5 μA Note 2
Output Leakage Current IOL -5 - 5 μA Note 3
Output Loading Condition See Figure 1
Note: 1. VIL (min) = -1.5V AC (pulse width ≤ 5ns).
2. Any input 0V ≤ VIN ≤ VDD + 0.3V, all other pins are not under t est = 0V
3. Dout is disabled, 0V ≤ Vout ≤ VDD
A43L2616B
(January, 2014, Version 1.4) 5 AMIC Technology, Corp.
Decoupling Capacitance Guide Line
Recommended decoupling capacitance added to power line at board.
Parameter Symbol Value Unit
Decoupling Capacitance between VDD and VSS CDC1 0.1 + 0.01 μF
Decoupling Capacitance between VDDQ and VSSQ CDC2 0.1 + 0.01 μF
Note: 1. VDD and VDDQ pins are separated each other.
All VDD pins are connected in chip. All VDDQ pins are connected in chip.
2. VSS and VSSQ pins are separated each other
All VSS pins are connected in chip. All VSSQ pins are connected in chip.
DC Electrical Characteristics
(Recommended operating condition unless otherwise noted, TA = 0°C to 70°C TA = -40ºC to +85ºC)
Speed
Symbol Parameter Test Conditions -6 -7
Unit Notes
Icc1 Operating Current
(One Bank Active) Burst Length = 1
tRC ≥ tRC(min), tCC ≥ tCC(min), IOL = 0mA 70 70 mA 1
Icc2 P CKE ≤ VIL(max), tCC = 15ns 2
Icc2 PS
Precharge Standby Current
in power-down mode CKE ≤ VIL(max), tCC = ∞ 1 mA
ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns 20
ICC2NS
Precharge Standby Current
in non power-down mode CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable. 15
mA
ICC3N Active Standby current in
non power-down mode
(One Bank Active)
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns 30 mA
ICC4 Operating Current
(Burst Mode) IOL = 0mA, Page Burst
All bank Activated, tCCD = tCCD (min) 100 100
mA 1
ICC5 Refresh Current tRC ≥ tRC (min) 130 130
mA 2
ICC6 Self Refresh Current CKE ≤ 0.2V 5 mA
Note: 1. Measured with outputs open. Addresses are changed only one time during tCC(min).
2. Refresh period is 64ms. Addresses are changed only one time during tCC(min).
A43L2616B
(January, 2014, Version 1.4) 6 AMIC Technology, Corp.
AC Operating Test Conditions
(VDD = 3.3V ±0.3V, TA = 0°C to +70°C or TA = -40ºC to +85ºC)
Parameter Value
AC input levels VIH/VIL = 2.4V/0.4V
Input timing measurement ref erence level 1.4V
Input rise and all time (See note3) tr/tf = 1ns/1ns
Output timing measurement ref erence level 1.4V
Output load condition See Fig.2
Output
870Ω
1200Ω
(Fig. 1) DC Output Load Circuit
ZO=50Ω
OUTPUT
50Ω
VTT =1.4V
50pF
(Fig. 2) AC Output Load Circuit
3.3V
50pF
VOH(DC) = 2.4V, IOH = -2mA
VOL(DC) = 0.4V, IOL = 2mA
AC Characteristics
(AC operating conditions unless otherwise noted)
-6 -7
Symbol Parameter CAS Latency Min Max Min Max
Unit Note
3 6 7
tCC CLK cycle time 2 10
1000 10 1000 ns 1
3 - 5 - 6
tSAC CLK to valid Output delay 2 - 6 - 6
ns 1,2
3 2.5 3
tOH Output data hold time 2 3
- 3 - ns 2
tCH CLK high pulse width 2.5 - 3 - ns 3
tCL CLK low pulse width 2.5 - 3 - ns 3
tSS Input setup t ime 1.5 - 2 - ns 3
tSH Input hold time 1 - 1 - ns 3
tSLZ CLK to output in Low-Z 1 - 1 - ns 2
3 - 5 - 6
tSHZ CLK to output In Hi-Z 2 - 6 - 6
ns
*All AC parameters are measured from half to half .
Note : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5) ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
A43L2616B
(January, 2014, Version 1.4) 7 AMIC Technology, Corp.
Operating AC Parameter
(AC operating conditions unless otherwise noted)
Version
Symbol Parameter -6 -7
Unit Note
tRRD(min) Row active to row active delay 12 14 ns 1
tRCD(min) RAS to CAS delay 18 20 ns 1
tRP(min) Row precharge time 18 20 ns 1
tRAS(min) 42 42 ns 1
tRAS(max) Row active time 100 μs
tRC(min) Row cycle time 60 63 ns 1
tCDL(min) Last data in new col. Address delay 6 7 ns 2
tRDL(min) Last data in row precharge 12 14 ns 2
tBDL(min) Last data in to burst stop 6 7 ns 2
tCCD(min) Col. Address to col. Address delay 6 7 ns
CAS Latency = 3 2
Number of valid output data CAS Latency = 2 1 ea 3
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. In case of row precharge interrupt, auto precharge and read burst st op.
A43L2616B
(January, 2014, Version 1.4) 8 AMIC Technology, Corp.
Simplified Truth Table
Command CKEn-1 CKEn CS RAS CAS WE DQM BA0
BA1 A10
/AP A9~A0,
A11 Notes
Register Mode Register Set H X L L L L X OP CODE 1,2
Auto Refresh H 3
Entry H L L L L H X X 3
L H H H 3
Refresh
Self
Refresh Exit L H
H X X X X X 3
Bank Active & Row Addr. H X L L H H X V Row Addr. 4
Auto Precharge Disable L 4 Read &
Column Addr. Auto Precharge Enable H X L H L H X V
H Column
Addr. 4,5
Auto Precharge Disable L 4 Write &
Column Addr. Auto Precharge Enable H X L H L L X V
H Column
Addr. 4,5
Burst Stop H X L H H L X X
Bank Selection V L
Precharge Both Banks H X L L H L X
X H X
L H H H
Entry H L
H X X X X
Clock Suspend or
Active Power Down Exit L H X X X X X X
L H H H
Entry H L
H X X X X
L V V V
Precharge Power Down Mode Exit L H
H X X X X X
DQM H X V X 6
L H H H
No Operation Command H X H X X X X X
(V = Valid, X = Don’t Care, H = Logic High, L = Logic Low)
Note : 1. OP Code: Operand Code
A0~A11, BA0, BA1: Program keys. (@MRS)
2. MRS can be issued only at both banks precharge state.
A new command can be issued after 2 clock cycle of MRS.
3. Auto refresh functions as same as CBR refresh of DRAM.
The automatical precharge without Row precharge command is meant by “Auto”.
Auto/Self refresh can be issued only at both precharge state.
4. BA0, BA1 : Bank select address.
If both BA1 and BA0 are “Low” at read, write, row active and precharge, bank A is selected.
If both BA1 is “Low” and BA0 is “High” at read, write, row active and precharge, bank B is selected.
If both BA1 is “High” and BA0 is “Low” at read, write, row active and precharge, bank C is selected.
If both BA1 and BA0 are “High” at read, write, row active and precharge, bank D is selected.
If A10/AP is “High” at row precharge, BA1 and BA0 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read write command cannot be issued.
Another bank read write command can be issued at every burst length.
6. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0) but
masks the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2)
A43L2616B
(January, 2014, Version 1.4) 9 AMIC Technology, Corp.
Mode Register Filed Table to Program Modes
Register Programmed with MRS
Address BA0, BA1 A11, A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Function RFU RFU W.B.L TM CAS Latency BT Burst Length
(Note 1) (Note 2)
Test Mode CAS Latency Burst Type Burst Length
A8 A7 Type A6 A5 A4 Latency A3 Type A2 A1 A0 BT=0 BT=1
0 0 Mode Register Set 0 0 0 Reserved 0 Sequential 0 0 0 1 1
0 1 0 0 1 - 1 Interleave 0 0 1 2 2
1 0 0 1 0 2 0 1 0 4 4
1 1
Vendor
Use
Only 0 1 1 3 0 1 1 8 8
Write Burst Length 1 0 0 Reserved 1 0 0 Reserved Reserved
A9 Length 1 0 1 Reserved 1 0 1 Reserved Reserved
0 Burst 1 1 0 Reserved 1 1 0 Reserved Reserved
1 Single Bit 1 1 1 Reserved
1 1 1 256(Full) Reserved
Power Up Sequence
1. Apply power and start clock, Attempt to maintain CKE = “H”, DQM = “H” and the other pins are NOP condition at inputs.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200μs.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
cf.) Sequence of 4 & 5 may be changed.
The device is now ready for normal operation.
Note : 1. RFU(Reserved for Future Use) should stay “0” during MRS cycle.
2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.
A43L2616B
(January, 2014, Version 1.4) 10 AMIC Technology, Corp.
Burst Sequence (Burst Length = 4)
Initial address
A1 A0 Sequential Interleave
0 0 0 1 2 3 0 1 2 3
0 1 1 2 3 0 1 0 3 2
1 0 2 3 0 1 2 3 0 1
1 1 3 0 1 2 3 2 1 0
Burst Sequence (Burst Length = 8)
Initial address
A2 A1 A0 Sequential Interleave
0 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
0 0 1 1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6
0 1 0 2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5
0 1 1 3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4
1 0 0 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3
1 0 1 5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2
1 1 0 6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1
1 1 1 7 0 1 2 3 4 5 6 7 6 5 4 3 2 1 0
A43L2616B
(January, 2014, Version 1.4) 11 AMIC Technology, Corp.
Device Operations
Clock (CLK)
The clock input is used as the reference for all SDRAM
operations. All operations are synchronized to the positive
going edge of the clock. The clock transitions must be
monotonic between VIL and VIH. During operation with CKE
high all inputs are assumed to be in valid state (low or high)
for the duration of set up and hold time around positive
edge of the clock for proper functionality and ICC
specifications.
Clock Enable (CKE)
The clock enable (CKE) gates the clock onto SDRAM. If
CKE goes low synchronously with clock (set-up and hold
time same as other inputs), the internal clock is suspended
form the next clock cycle and the state of output and burst
address is frozen as long as the CKE remains low. All other
inputs are ignored from the next clock cycle aft er CKE goes
low. When both banks are in the idle state and CKE goes
low synchronously with clock, the SDRAM enters the power
down mode form the next clock cycle. The SDRAM
remains in the power down mode ignoring the other inputs
as long as CKE remains low. The power down exit is
synchronous as the internal clock is suspended. When
CKE goes high at least “tSS + 1 CLOCK” before the high
going edge of the clock, then the SDRAM becomes active
from the same clock edge accepting all the input
commands.
Bank Select (BA0, BA1)
This SDRAM is organized as 4 independent banks of
1,048,576 words X 16 bits memory arrays. The BA0, BA1
inputs is latched at the time of assertion of RAS and CAS
to select the bank to be used for the operation. The bank
select BA0, BA1 is latched at bank activate, read, write
mode register set and precharge operations.
Address Input (A0 ~ A11)
The 20 address bits required to decode the 262,144 word
locations are multiplexed into 12 address input pins
(A0~A11). The 12 bit row address is latched along with
RAS , BA0 and BA1 during bank activate command. The 8
bit column address is latched along with CAS , WE, BA0
and BA1during read or write command.
NOP and Device Deselect
When RAS , CAS and WE are high, the SDRAM
performs no operation (NOP). NOP does not initiate any
new operation, but is needed to complete operations which
require more than single clock like bank activate, burst
read, auto refresh, etc. The device deselect is also a NOP
and is entered by asserting CS high. CS high disables
the command decoder so that RAS , CAS and WE, and
all the address inputs are ignored.
Power-Up
The following sequence is recommended for POWER UP
1. Power must be applied to either CKE and DQM inputs to
pull them high and other pins are NOP condition at the
inputs before or along with VDD (and VDDQ) supply.
The clock signal must also be asserted at the same time.
2. After VDD reaches the desired voltage, a minimum
pause of 200 microseconds is required with inputs in
NOP condition.
3. Both banks must be precharged now.
4. Perform a minimum of 2 Auto refresh cycles to stabilize
the internal circuitry.
5. Perform a MODE REGISTER SET cycle to program the
CAS latency, burst length and burst type as the default
value of mode register is undefined.
At the end of one clock cycle from the mode register set
cycle, the device is ready for operation.
When the above sequence is used for Power-up, all the
out-puts will be in high impedance state. The high
impedance of outputs is not guaranteed in any other
power-up sequence.
cf.) Sequence of 4 & 5 may be changed.
Mode Register Set (MRS)
The mode register stores the data for controlling the
various operation modes of SDRAM. It programs the CAS
latency, addressing mode, burst length, test mode and
various vendor specific options to make SDRAM useful for
variety of different applications. The default value of the
mode register is not defined, therefore the mode register
must be written after power up to operate the SDRAM. T he
mode register is written by asserting low on CS ,RAS ,
CAS ,WE (The SDRAM should be in active mode with
CKE already high prior to writing the mode register). The
state of address pins A0~A11, BA0 and BA1 in the same
cycle as CS ,RAS ,CAS ,WE going low is the data
written in the mode register. One clock cycle is required to
complete the write in the mode register. The mode register
contents can be changed using the same command and
clock cycle requirements during operation as long as both
banks are in the idle state. The mode register is divided
into various fields depending on functionality. The burst
length field uses A0~A2, burst type uses A3, addressing
mode uses A4~A6, A7~A8, A11, BA0 and BA1 are used for
vendor specific options or test mode. And the write burst
length is programmed using A9. A7~A8, A11, BA0 and BA1
must be set to low for normal SDRAM operation.
Refer to table for specific codes for various burst length,
addressing modes and CAS latencies.
A43L2616B
(January, 2014, Version 1.4) 12 AMIC Technology, Corp.
Device Operations (continued)
Bank Activate
The bank activate command is used to select a random
row in an idle bank. By asserting low on RAS and
CS with desired row and bank addresses, a row access is
initiated. The read or write operation can occur after a time
delay of tRCD(min) from the time of bank activation.
tRCD(min) is an internal timing parameter of SDRAM,
therefore it is dependent on operating clock f requency. The
minimum number of clock cycles required between bank
activate and read or write command should be calculated
by dividing tRCD(min) with cycle time of the clock and then
rounding off the result to the next higher integer. The
SDRAM has two internal banks on the same chip and
shares part of the internal circuitry to reduce chip area,
therefore it restricts the activation of both banks
immediately. Also the noise generated during sensing of
each bank of SDRAM is high requiring some time for
power supplies recover before the other bank can be
sensed reliably. tRRD(min) specifies the minimum time
required between activating different banks. The number of
clock cycles required between different bank activation
must be calculated similar to tRCD specification. The
minimum time required for the bank to be active to initiate
sensing and restoring the complete row of dynamic cells is
determined by tRAS(min) specification before a precharge
command to that active bank can be asserted. The
maximum time any bank can be in the active state is
determined by tRAS(max). The number of cycles for both
tRAS(min) and tRAS(max) can be calculated similar to tRCD
specification.
Burst Read
The burst read command is used to access burst of data
on consecutive clock cycles from an active row in an active
bank. The burst read command is issued by asserting low
on C
S
and CAS with WE being high on the positive
edge of the clock. The bank must be active for at least
tRCD(min) before the burst read command is issued. The
first output appears CAS latency number of clock cycles
after the issue of burst read command. The burst length,
burst sequence and latency from the burst read command
is determined by the mode register which is already
programmed. The burst read can be initiated on any
column address of the active row. The address wraps
around if the initial address does not start from a boundary
such that number of outputs from each I/O are equal to the
burst length programmed in the mode register. The output
goes into high-impedance at the end of the burst, unless a
new burst read was initiated to keep the data output
gapless. The burst read can be terminated by issuing
another burst read or burst write in the same bank or the
other active bank or a precharge command to the same
bank. The burst stop command is valid at every page burst
length.
Burst Write
The burst write command is similar to burst read
command, and is used to write data into the SDRAM
consecutive clock cycles in adjacent addresses depending
on burst length and burst sequence. By asserting low on
CS ,CAS and WE with valid column address, a write
burst is initiated. T he data inputs are provided for the initial
address in the same clock cycle as the burst write
command. The input buffer is deselected at the end of the
burst length, even though the int ernal writing may not have
been completed yet. The writing can not complete to burst
length. The burst write can be terminated by issuing a burst
read and DQM for blocking data inputs or burst write in the
same or the other active bank. T he burst stop command is
valid only at full page burst length where the writing
continues at the end of burst and the burst is wrap around.
The write burst can also be terminated by using DQM for
blocking data and precharging the bank “tRDL” after the last
data input to be written into the active row. See DQM
OPERATION also.
DQM Operation
The DQM is used to mask input and output operation. It
works similar to OE during read operation and inhibits
writing during write operation. The read latency is two
cycles from DQM and zero cycle for write, which means
DQM masking occurs two cycles later in the read cycle and
occurs in the same cycle during write cycle. DQM
operation is synchronous with the clock, therefore the
masking occurs for a complete cycle. The DQM signal is
important during burst interrupts of write with read or
precharge in the SDRAM. Due to asynchronous nature of
the internal write, the DQM operation is critical to avoid
unwanted or incomplete writes when the complete burst
write is not required.
Precharge
The precharge operation is perf ormed on an active bank by
asserting low on CS ,RAS ,WE and A10/AP with valid
BA of the bank to be precharged. The precharge command
can be asserted anytime after tRAS(min) is satisfied from
the bank activate command in the desired bank. “tRP” is
defined as the minimum time required to precharge a bank.
The minimum number of clock cycles required to complete
row precharge is calculated by dividing “tRP” with clock
cycle time and rounding up to the next higher integer. Care
should be taken to make sure that burst write is completed
or DQM is used to inhibit writing before precharge
command is asserted. The maximum time any bank can be
active is specified by tRAS(max). Therefore, each bank has
to be precharged within tRAS(max) from the bank activate
command. At the end of precharge, the bank enters the
idle state and is ready to be activated again.
Entry to Power Down, Auto refresh, Self refresh and Mode
register Set etc, is possible only when both banks are in
idle state.
A43L2616B
(January, 2014, Version 1.4) 13 AMIC Technology, Corp.
Device Operations (continued)
Auto Precharge
The precharge operation can also be performed by using
auto precharge. The SDRAM internally generates the
timing to satisfy tRAS(min) and “tRP” for the programmed
burst length and CAS latency. The auto precharge
command is issued at the same time as burst read or burst
write by asserting high on A10/AP. If burst read or burst
write command is issued with low on A10/AP, the bank is
left active until a new command is asserted. Once auto
precharge command is given, no new commands are
possible to that particular bank until the bank achieves idle
state.
Four Banks Precharge
Both banks can be precharged at the same time by using
Precharge all command. Asserting low on CS ,RAS and
WE with high on A10/AP after both banks have satisfied
tRAS(min) requirement, performs precharge on both banks.
At the end of tRP after performing precharge all, both
banks are in idle state.
Auto Refresh
The storage cells of SDRAM need to be refreshed every
64ms to maintain data. An auto ref resh cycle accomplishes
refresh of a single row of storage cells. The internal
counter increments automatically on every auto refresh
cycle to refresh all the rows. An auto refresh command is
issued by asserting low on CS ,RAS and CAS with high
on CKE and WE. T he auto refresh command can only be
asserted with both banks being in idle state and the device
is not in power down mode (CKE is high in the previous
cycle). The time required to complete the auto refresh
operation is specified by “tRC(min)”. The minimum number
of clock cycles required can be calculated by driving “tRC”
with clock cycle time and then rounding up to the next
higher integer. The auto refresh command must be
followed by NOP’s until the auto refresh operation is
completed. Both banks will be in the idle state at the end of
auto refresh operation. The auto refresh is the preferred
refresh mode when the SDRAM is being used for normal
data transactions. T he aut o refr esh cycle can be performed
once in 15.6us or a burst of 4096 auto refresh cycles once
in 64ms.
Self Refresh
The self refresh is another refresh mode available in the
SDRAM. The self refresh is t he preferred refresh mode for
data retention and low power operation of SDRAM. In self
refresh mode, the SDRAM disables the internal clock and
all the input buffers except CKE. The refresh addressing
and timing is internally generated to reduce power
consumption.
The self refresh mode is entered from all banks idle state
by asserting low on CS ,RAS ,CAS and CKE with high
on WE. Once the self refresh mode is entered, only CKE
state being low matters, all the other inputs including clock
are ignored to remain in the self refresh.
The self refresh is exited by restarting the external clock
and then asserting high on CKE. This must be followed by
NOP’s for a minimum time of “tRC” before the SDRAM
reaches idle state to begin normal operation. If the system
uses burst auto refresh during normal operation, it is
recommended to used burst 4096 auto refresh cycles
immediately after exiting self refresh.
A43L2616B
(January, 2014, Version 1.4) 14 AMIC Technology, Corp.
1) Click Suspended During Write (BL=4)
Masked by CKE
Q0 Q1 Q3
Q0 Q2 Q3
Suspended Dout
2) Clock Suspended During Read (BL=4)
WR
Masked by CKE
D0 D1 D2 D3
D0 D1 D2 D3
Not Written
DQ(CL3)
DQ(CL2)
Internal
CLK
CKE
CMD
CLK
RD
Q2
Q1
Note: CLK to CLK disable/enable=1 clock
Basic feature And Function Descriptions
1. CLOCK Suspend
2. DQM Operation
* Note : 1. DQM makes data out Hi-Z after 2 clocks which should masked by CKE “L”.
2. DQM masks both data-in and data-out.
1) Write Mask (BL=4)
Masked by CKE
Q0 Q2 Q3
Q1 Q2 Q3
DQM to Data-out Mask = 2
2) Read Mask (BL=4)
WR
Masked by CKE
D0 D1 D3
D0 D1 D3
DQM to Data-in Mask = 0CLK
DQ(CL3)
DQ(CL2)
DQM
CMD
CLK
RD
Hi-Z
Hi-Z
Q0 Q2 Q4
2) Read Mask (BL=4)
RD
Hi-Z
Hi-Z
Hi-Z Q6 Q7 Q8
Hi-Z
Q1 Q3
Hi-Z Hi-Z Q5 Q6 Q7
CLK
CMD
CKE
DQM
DQ(CL2)
DQ(CL3)
A43L2616B
(January, 2014, Version 1.4) 15 AMIC Technology, Corp.
3. CAS Interrupt (I)
Note : 1. By “Interrupt”, It is possible t o stop burst read/write by external command before the end of burst.
By “CAS Interrupt”, to stop burst read/write by CAS access; read, write and block write.
2. tCCD : CAS to CAS delay. (=1CLK)
3. tCDL : Last data in to new column address delay. (= 1CLK).
1) Read interrupted by Read (BL=4)
Note 1
RD RD
AB
QA0 QB0 QB1 QB2 QB3
QA0 QB0 QB1 QB2 QB3
CLK
CMD
ADD
DQ(CL2)
DQ(CL3) t
CCD
Note2
2) Write interrupted by Write (BL =2)
WR WR
AB
CLK
CMD
ADD t
CCD Note2
DA0 DB0 DB1
t
CDL
Note3
DQ
3) Write interrupted by Read (BL =2)
WR RD
AB
t
CCD Note2
DA0 QB0 QB1
t
CDL
Note3
DQ(CL2)
QB0 QB1
DQ(CL3) DA0
A43L2616B
(January, 2014, Version 1.4) 16 AMIC Technology, Corp.
4. CAS Interrupt (II) : Read Interrupted Write & DQM
* Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.
2. To prevent bus contention, DQM should be issued which makes a least one gap between data in and data out.
RD WR
D0 D1 D2 D3
RD WR
D0 D1 D2 D3
WRRD
Hi-Z
Hi-Z D0 D1 D2 D3
RD WR
D0 D1 D2 D3Q0 Hi-Z
Note 1
RD WR
D0 D1 D2 D3
RD WR
D0 D1 D2 D3
WRRD
Hi-Z D0 D1 D2 D3
RD
WR
D0 D1 D2Q0 Hi-Z
Note 2
D0 D1 D2 D3
RD WR
WR
(1) CL=2, BL=4
CLK
i) CMD
DQM
DQ
ii) CMD
DQM
DQ
iii) CMD
DQM
DQ
iv) CMD
DQM
DQ
(2) CL=3, BL=4
CLK
i) CMD
DQM
DQ
ii) CMD
DQM
DQ
iii) CMD
DQM
DQ
iv) CMD
DQM
DQ
v) CMD
DQM
DQ D3
A43L2616B
(January, 2014, Version 1.4) 17 AMIC Technology, Corp.
WR PRE
D0 D1 D2 D3
CLK
CMD
DQ
1) N orm al Write (BL=4)
tRDL
RD PRE
Q0 Q1 Q2 Q3
CLK
CMD
DQ(CL2)
2) R ead (BL=4)
Q0 Q1 Q2 Q3DQ(CL3)
WR
D0 D1 D2 D3
CLK
CMD
DQ
1) Normal Write (BL=4)
Note 1
RD
Q0 Q1 Q2 Q3
CLK
CMD
DQ(CL2)
2) Read (BL=4)
Q0 Q1 Q2 Q3DQ(CL3)
Auto Precharge Starts
Note 1
Auto Precharge Starts
5. Write Interrupted by Precharge & DQM
Note : 1. To inhibit invalid write, DQM should be issued.
2. This precharge command and burst write command should be of the same bank, otherwise it is not precharge
interrupt but only another bank precharge of dual banks operation.
6. Precharge
7. Auto Precharge
* Note : 1. The row active command of the precharge bank can be issued aft er tRP from this point.
The new read/write command of other active bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
WR PRE
Note 2
Note 1
D0 D1 D2 D3
Masked by DQM
CLK
CMD
DQM
DQ
A43L2616B
(January, 2014, Version 1.4) 18 AMIC Technology, Corp.
8. Burst Stop & Interrupted by Precharge
WR
D0 D1 D2 D3
CLK
CMD
DQM
DQ
1) Normal Write (BL=4)
PRE
t
RDL
Note 1
WR
D0 D1 D2 D3
CLK
CMD
DQM
DQ
2) Write Burst Stop (BL=8)
STOP
t
BDL
Note 2
D4 D5
RD
Q0 Q1
CLK
CMD
DQ(CL2)
1) Read Interrupted by Precharge (BL=4)
PRE
Note 3
DQ(CL3) Q0 Q1
1
2
RD
Q0 Q1
CLK
CMD
DQ(CL2)
4) Read Burst Stop (BL=4)
STOP
DQ(CL3) Q0 Q1
1
2
9. MRS
Note : 1. tRDL: 1CLK
2. tBDL: 1CLK; Last data in to burst st op delay.
Read or write burst stop command is valid at every burst length.
3. Number of valid output data after row precharge or burst stop: 1,2 for CAS latency = 2, 3 respectively.
4. PRE: All banks precharge if necessary.
MRS can be issued only when all banks are in precharged state.
10. Clock Suspend Exit & Power Down Exit
PRE MRS
Note 1
CLK
CMD
Mode Register Set
2CLK
ACT
t
RP
2) Power Down (=Precharge Power Down) Exit
Note 1
CLK
CMD
1) Clock Suspend (=Active Power Down) Exit
RD
t
SS
CKE
Internal
CLK
Note 2
CLK
CMD ACT
CKE
Internal
CLK
t
SS
NOP
A43L2616B
(January, 2014, Version 1.4) 19 AMIC Technology, Corp.
11. Auto Refresh & Self Refresh
* Note : 1. Active power down : one or more bank active state.
2. Precharge power down : both bank precharge state.
3. The auto refr esh is the same as CBR refresh of conventional DRAM.
No precharge commands are required after Auto Refresh command.
During tRC from auto refresh command, any other command can not be accepted.
4. Before executing auto/self refresh command, both banks must be idle stat e.
5. MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh mode, refr esh interval and refresh operation are performed int ernally.
After self refresh entry, self refresh mode is kept while CKE is LOW.
During self refresh mode, all inputs expect CKE will be don’t cared, and outputs will be in Hi-Z state.
During tRC from self refresh exit command, any other command can not be accepted.
Before/After self refresh mode, burst auto refresh cycle (4K cycles ) is recommended.
2) S elf R e fresh
CLK
1) A uto R efre sh
CMD
CKE
CLK
CMD SR
CKE
PRE
Note 4
PRE AR CMD N ote 5
~
~
~
~
~
~
~
~
tRP tRC
N ote 3
N ote 6
~
~
CMD
~
~
Note 4
tRP tRC
~
~
~
~
~
~
A43L2616B
(January, 2014, Version 1.4) 20 AMIC Technology, Corp.
12. About Burst Type Control
Sequential counting At MRS A3=”0”. See the BURST SEQUENCE TABE.(BL=4,8)
BL=1,2,4,8 and full page wrap around.
Basic
MODE Interleave counting At MRS A3=” 1”. See the BURST SEQUENCE TABE.(BL=4,8)
BL=4,8 At BL=1,2 Interleave Counting = Sequential Counting
Random
MODE Random column Access
tCCD = 1 CLK
Every cycle Read/Write Command with random column address can realize
Random Column Access.
That is similar to Extended Data Out (EDO) Operation of convention DRAM.
13. About Burst Length Control
1 At MRS A2,1,0 = “000”.
At auto precharge, tRAS should not be violat ed.
2 At MRS A2,1,0 = “001”.
At auto precharge, tRAS should not be violat ed.
4 At MRS A2,1,0 = “010”
Basic
MODE
8 At MRS A2,1,0 = “011”.
Special
MODE
BRSW At MRS A9=”1”.
Read burst = 1,2,4,8, full page/write Burst =1
At auto precharge of write, tRAS should not be violated.
RAS Interrupt
(Interrupted by Precharge)
Before the end of burst, Row precharge command of the same bank
Stops read/write burst with Row precharge.
tRDL=1 with DQM, valid DQ after burst stop is 1,2 for CL=2,3 respectively
During read/write burst with auto precharge, RAS interrupt cannot be issued.
Interrupt
MODE
CAS Interrupt Before the end of burst, new read/write stops read/write burst and starts new
read/write burst or block write.
During read/write burst with auto precharge, CAS interrupt can not be issued.
A43L2616B
(January, 2014, Version 1.4) 21 AMIC Technology, Corp.
Power On Sequence & Auto Refresh
KEY Ra
BA
Ra
Hi gh leve l is n e c e s s a r y
High level is necessary
High-Z
tRP tRC
0 1 2 3 4 5 6 7 8 9 10111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA0, BA1
A10/AP
WE
DQM
DQ
Precharge
(All Banks) Au to Refre sh Auto Refresh Mode Regiser Set
Row Active
(A-Bank)
: Don 't c a re
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
A43L2616B
(January, 2014, Version 1.4) 22 AMIC Technology, Corp.
Single Bit Read-Write-Read Cycles (Same Page) @CAS Latency=3, Burst Length=1
Rb
High
tRCD tRP
0 1 2 3 4 5 6 7 8 9 10111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA0, BA1
A10/AP
WE
DQM
DQ
Row Active Read Write Row Active
: Don't care
tCH
tCL
tCC
Ra Ca Cb Cc
BA BA BA BA BA BA
Ra Rb
Qa Db Qc
tRAS
tRC tSH
tSS
*Note 1
tSH
tSS tCCD
tSH
tSS
tSH
tSS
tSS
tSH
*Note 2 *Note 2,3 *Note 2,3 *Note 2,3 *Note 4 *No te 2
*Note 3 *Note 3 *Note 3 *Note 4
tSH
tSS
tSHtSS
tSH
tSS
tRAC tSAC
tSLZ tOH tSHZ
Read
Precharge
A43L2616B
(January, 2014, Version 1.4) 23 AMIC Technology, Corp.
* Note : 1. All inputs can be don’t care when CS is high at t he CLK high going edge.
2. Bank active & read/write are controlled by BA0, BA1.
BA1 BA0 Active & Read/Write
0 0 Bank A
0 1 Bank B
1 0 Bank C
1 1 Bank D
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command.
A10/AP BA1 BA0 Operation
0 0 Disable auto precharge, leave bank A active at end of burst.
0 1 Disable auto precharge, leave bank B active at end of burst.
1 0 Disable auto precharge, leave bank C active at end of burst.
0
1 1 Disable auto precharge, leave bank D active at end of burst.
0 0 Enable auto precharge, prec harge bank A at end of burst.
0 1 Enable auto precharge, prec harge bank B at end of burst.
1 0 Enable auto precharge, prec harge bank C at end of burst.
1
1 1 Enable auto precharge, prec harge bank D at end of burst.
4. A10/AP and BA0, BA1 control bank precharge when precharge command is asserted.
A10/AP BA1 BA0 Precharge
0 0 0 Bank A
0 0 1 Bank B
0 1 0 Bank C
0 1 1 Bank D
1 X X All Banks
A43L2616B
(January, 2014, Version 1.4) 24 AMIC Technology, Corp.
Read & Write Cycle at Same Bank @Burst Length=4
High
tRC
tRCD
0 1 2 3 4 5 6 7 8 9 10111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA0
WE
DQM
DQ
(CL = 2)
Row Active
(A-Bank) Read
(A-Bank) Precharge
(A-Bank) Row Active
(A-Bank) Precharge
(A-Bank)
: Don't care
*Note 1
*Note 2
Ra Ca0 Rb Cb0
Ra RbA10/AP
Qa0
tOH
Qa1 Qa2 Qa3 Db0 Db1 Db2 Db3
tRAC tSAC
*Note 3 tSHZ *Note 4
Qa0
tOH
Qa1 Qa2 Qa3 Db0 Db1 Db2 Db3
tRAC tSAC
*Note 3 tSHZ *Note 4 tRDL
Write
(A-Bank)
DQ
(CL = 3)
BA1
tRDL
*Note : 1. Minimum row cycle times is required to complete internal DRAM operation.
2. Row precharge can interrupt burst on any cycle. [CAS latency-1] valid output data available after Row enters precharge.
Last valid output will be Hi-Z after tSHZ from the clock.
3. Access time from Row address. tCC*(tRCD + CAS latency-1) + tSAC
4. Output will be Hi-Z after the end of burst. (1,2,4 & 8)
A43L2616B
(January, 2014, Version 1.4) 25 AMIC Technology, Corp.
Page Read & Write Cycle at Same Bank @Burst Length=4
tRDL
High
tRCD
0 12345678910111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA0
WE
DQM
DQ
(CL=2)
Row Active
(A-Bank) Read
(A-Bank) Precharge
(A-Bank)
: Don't care
*Note 2
Ra Ca Cb Cc
RaA10/AP
Qa0 Qa1 Qb0 Qb1 Dc0 Dc1 Dd0 Dd1
Qa0 Qa1 Qb0
Write
(A-Bank)
Cd
tCDL
*Note 2
*Note1 *Note3
Dc0 Dc1 Dd0 Dd1
Read
(A-Bank) Write
(A-Bank)
DQ
(CL=3)
BA1
Qb2
Qb1
*Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus
contention.
2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input
data after Row precharge cycle will be masked internally.
A43L2616B
(January, 2014, Version 1.4) 26 AMIC Technology, Corp.
Page Read Cycle at Different Bank @Burst Length = 4
Read
(C-Bank)
Row Active
(D-Bank)
Read
(B-Bank)
Read
(A-Bank)
High
0 1 2 3 4 5 6 7 8 9 10111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA1
Row Active
(A-Bank)
Row Active
(B-Bank) : Don't care
RAa RBb
A10/AP
CBb
Row Active
(C-Bank)
*Note 1
*Note 2
CAa
RAa
WE
DQM
QBb2QBb1QAa0 QAa1 QAa2 QBb0 QCc0 QCc1 QCc2 QDd0 QDd1 QDd2
QBb2QBb1QAa0 QAa1 QAa2 QBb0 QCc0 QCc1 QCc2 QDd0 QDd1 QDd2
Read
(D-Bank)
Precharge
(C-Bank)
Precharge
(D-Bank)
DQ
(CL=2)
DQ
(CL=3)
BA0
RBb RCc RDd
Precharge
(A-Bank) Precharge
(B-Bank)
RCc CCcRDd CDd
* Note : 1. CS can be don’t care when RAS, CAS and WE are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read ad the precharge banks must be the same.
A43L2616B
(January, 2014, Version 1.4) 27 AMIC Technology, Corp.
Page Write Cycle at Different Bank @Burst Length=4
High
0 12345678910111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA1
Row Active
(A-Bank)
Row Active
(B-Bank)
: Don't care
A10/AP
Write
(A-Bank)
WE
DBb1DBb0DAa0 DAa1 DAa2 DAa3 DBb2 DBb3 DCc0 DCc1
Write
(C-Bank)
Precharge
(All Banks)
DQM
DQ tCDL
DDd0 DDd1
*Note 2
tRDL
*Note 1
Write
(D-Bank)
Write
(B-Bank)
Row Active
(C-Bank)
Row Active
(D-Bank)
RAa RBb CBbCAa RCc RDd CCc CDd
RAa
BA0
RBb RCc RDd
CDd2
* Note:
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and precharge banks must be the same.
A43L2616B
(January, 2014, Version 1.4) 28 AMIC Technology, Corp.
Read & Write Cycle at Different Bank @Burst Length=4
High
0 12345678910111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA1
Row Active
(A-Bank) Read
(A-Bank)
: Don't care
RAa CAa
A10/AP
RDb
Precharge
(A-Bank)
CDb CBc
RAa
WE
QAa2QAa1QAa0 QAa3 DDb0
Write
(D-Bank) Read
(B-Bank)
DQM
QBc0 QBc1
RBc
RBCRDb tCDL
*Note 1
QAa3QAa2QAa0 QAa1 DDb0 DDb1 QBc0DDb2 DDb3 QBc1 QBc2
DQ
(CL=2)
DDb1 DDb2 DDb3
DQ
(CL=3)
Row Active
(B-Bank)
Row Active
(D-Bank)
BA0
* Note : tCDL should be met to complete write.
A43L2616B
(January, 2014, Version 1.4) 29 AMIC Technology, Corp.
Read & Write Cycle with Auto Precharge @Burst Length=4
High
0 12345678910111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA1
Row Active
(A-Bank)
Row Active
(D-Bank)
: Don't care
RAa RBb
A10/AP
CAa
Auto Precharge
Start Point
(A-Bank/CL=2)
RAa
WE
QAa2QAa1QAa0 QAa3 DDb0
Auto Precharge
Start Point
(D-Bank)
DQM
CBb
QAa3QAa2QAa0 QAa1 DDb0 DDb1 DDb2 DDb3
DQ
(CL=2)
DDb1 DDb2 DDb3
DQ
(CL=3)
Write with
Auto Precharge
(D-Bank)
RBb
Read with
Auto Precharge
(A-Bank)
BA0
Auto Precharge
Start Point
(A-Bank/CL=3)
*Note : tRCD should be controlled to meet minimum tRAS before internal precharge start.
(In the case of Burst Length=1 & 2, BRSW mode)
A43L2616B
(January, 2014, Version 1.4) 30 AMIC Technology, Corp.
Clock Suspension & DQM Operation Cycl e @CAS Latency = 2, Burst Length=4
0 12345678910111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA1
Row Active
: Don't care
Ra
A10/AP
Ca
Ra
WE
DQM
Qa1 Qb0 Qb1 Dc0
DQ
Clock
Suspension
Read
Cb
Read
Qa0 Dc2
* Note 1
Qa2
Cc
Clock
Suspension
tSHZ
Qa3
tSHZ
Write
DQM
Write
Read DQM
BA0
* Note : DQM needed to prevent bus contention.
A43L2616B
(January, 2014, Version 1.4) 31 AMIC Technology, Corp.
Read Interrupted by Precharge Command & Read Burst Stop Cy cle @Burst Length=Full Page
High
0 12345678910111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA1
Row Active
(A-Bank)
: Don't care
RAa
A10/AP
CAa
WE
QAa3QAa2QAa1 QAa4 QAb0
DQM
QAa4QAa3QAa1 QAa2 QAb0 QAb1 QAb2 QAb3
DQ
(CL=2)
QAb1 QAb2 QAb3
DQ
(CL=3)
Precharge
(A-Bank)
Read
(A-Bank)
CAb
Read
(A-Bank)
Burst Stop
1
QAa0 QAb4 QAb5
1
QAa0
2
QAb4 QAb5
2
BA0
RAa
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQ’s after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer t he timing diagram of “Full page write burst stop cycle”.
3. Burst stop is valid at every burst length.
A43L2616B
(January, 2014, Version 1.4) 32 AMIC Technology, Corp.
Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Burst Length = Full Page
High
0 12345678910111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA1
Row Active
(A-Bank)
: Don't care
RAa
A10/AP
CAa
WE
DQM
DAa4DAa3DAa1 DAa2 DAb0 DAb1 DAb2 DAb3
DQ
Precharge
(A-Bank)
Write
(A-Bank)
CAb
Write
(A-Bank)
Burst Stop
DAa0 DAb4 DAb5
tRDL
tBDL
* Note 2
BA0
RAa
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. Data-in at the cycle of interrupted by precharge cannot be written into the corresponding memory cell.
It is defined by AC parameter of tRDL(=2CLK).
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.
Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
A43L2616B
(January, 2014, Version 1.4) 33 AMIC Technology, Corp.
Active/Precharge Power Down Mode @CAS Lantency=2, Burst Length=4
0 12345678910111213141516171819
CLOCK
CKE
CS
RAS
CAS
ADDR
BA1
Precharge
Power-down
Exit
: Don't care
A10/AP
Active
Power-down
Entry
Row Active
WE
Qa2
Read Precharge
DQM
DQ Qa0 Qa1
Precharge
Power-
down
Entry
tSS tSS
* Note 2
* Note 1
*Note 3
tSS tSS
Ra Ca
Ra
Active
Power-
down
Exit
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BA0
~
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~
~
~
~
~
t
* Note : 1. All banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least “1CLK + tSS” prior to Row active command.
3. Cannot violate minimum refresh specification. (64ms)
A43L2616B
(January, 2014, Version 1.4) 34 AMIC Technology, Corp.
Self Refresh Entry & Exit Cycle
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* Note : TO ENTER SELF REFRESH MODE
1.
CS, RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.
3. The device remains in self refresh mode as long as CKE stays “Low”.
(cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5.
CS starts from high.
6. Minimum tRC is required after CKE going high to complete self refresh exit.
7. 4K cycle of burst auto refresh is required before self refresh entry and after self refresh exit.
If the system uses burst refresh.
A43L2616B
(January, 2014, Version 1.4) 35 AMIC Technology, Corp.
Mode Register Set Cycle Auto Refresh Cycle
0 123456 012345678910
CLOCK
CKE
CS
RAS
CAS
ADDR
: Don't care
WE
Auto Refresh New Command
DQM
DQ
MRS
~
~~
~
* Note 1
~
~
~
~
Hi-ZHi-Z
High High
~
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~
~
tRC
*Note 2
~
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~
~
~
~
~
~
Key
* Note 3
~
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~
New
Command
~
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~
~
Ra
* Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
MODE REGISTER SET CYCLE
* Note : 1. CS, RAS , CAS & WE activation at the same clock cycle with address key will set internal mode register.
2. Minimum 2 clock cycles should be met before new RAS activation.
3. Please refer to Mode Register Set table.
A43L2616B
(January, 2014, Version 1.4) 36 AMIC Technology, Corp.
Function Truth Table (Table 1)
Current
State CS RA
S
CAS WE BA Address Action Note
H X X X X X NOP
L H H H X X NOP
L H H L X X ILLEGAL 2
L H L X BA CA, A10/AP ILLEGAL 2
L L H H BA RA Row Active; Latch Row Address
L L H L BA PA NOP 4
L L L H X X Auto Refresh or Self Refresh 5
IDLE
L L L L OP Code Mode Register Access 5
H X X X X X NOP
L H H H X X NOP
L H H L X X ILLEGAL 2
L H L H BA CA,A10/AP Begin Read; Latch CA; Determine AP
L H L L BA CA,A10/AP Begin Write; Latch CA; Det ermine AP
L L H H BA RA ILLEGAL 2
L L H L BA PA Precharge
Row
Active
L L L X X X ILLEGAL
H X X X X X NOP(Continue Burst to End →Row Active)
L H H H X X NOP(Continue Burst to End →Row Active)
L H H L X X Term burst →Row Active
L H L H BA CA,A10/AP Term burst; Begin Read; Lat ch CA; Determine AP 3
L H L L BA CA,AP Term burst; Begin Write; Latch CA; Determine AP 3
L L H H BA RA ILLEGAL 2
L L H L BA PA Term Burst; Precharge timing for Reads 3
Read
L L L X X X ILLEGAL
H X X X X X NOP(Continue Burst to End→Row Active)
L H H H X X NOP(Continue Burst to End→Row Active)
L H H L X X Term burst →Row Active
L H L H BA CA,A10/AP Term burst; Begin Read; Latch CA; Det ermine AP 3
L H L L BA CA,A10/ AP Term burst; Begin Read; Latch CA; Determine AP 3
L L H H BA RA ILLEGAL 2
L L H L BA A10/AP Term Burst; Precharge timing for Writes 3
Write
L L L X X X ILLEGAL
H X X X X X NOP(Continue Burst to End→Precharge)
L H H H X X NOP(Continue Burst to End→Precharge)
L H H L X X ILLEGAL
L H L H BA CA,A10/AP ILLEGAL 2
L H L L BA CA,A10/AP ILLEGAL 2
L L H X BA RA, PA ILLEGAL
Read with
Auto
Precharge
L L L X X X ILLEGAL 2
A43L2616B
(January, 2014, Version 1.4) 37 AMIC Technology, Corp.
Function Truth Table (Table 1, Continued)
Current
State CS RA
S
CAS WE BA Address Action Note
H X X X X X NOP(Continue Burst to End→Precharge)
L H H H X X NOP(Continue Burst to End→Precharge)
L H H L X X ILLEGAL
L H L H BA CA,A10/AP ILLEGAL 2
L H L L BA CA,A10/AP ILLEGAL 2
L L H X BA RA, PA ILLEGAL
Write with
Auto
Precharge
L L L X X X ILLEGAL 2
H X X X X X NOP→Idle after tRP
L H H H X X NOP→Idle after tRP
L H H L X X ILLEGAL
L H L X BA CA,A10/AP ILLEGAL 2
L L H H BA RA ILLEGAL 2
L L H L BA A10/PA
NOP→Idle after tRP 2
Precharge
L L L X X X ILLEGAL 4
H X X X X X NOP→Row Active after tRCD
L H H H X X NOP→Row Active after tRCD
L H H L X X ILLEGAL
L H L X BA CA,A10/AP ILLEGAL 2
L L H H BA RA ILLEGAL 2
L L H L BA A10/PA ILLEGAL 2
Row
Activating
L L L X X X ILLEGAL 2
H X X X X X NOP→Idle after tRC
L H H X X X NOP→Idle after tRC
L H L X X X ILLEGAL
L L H X X X ILLEGAL
Refreshing
L L L X X X ILLEGAL
H X X X X X NOP→Idle after 2 clocks
L H H H H X NOP→Idle after 2 clocks
L H H L X X ILLEGAL
L H L X X X ILLEGAL
Mode
Register
Accessing
L L X X X X ILLEGAL
Abbreviations
RA = Row Address BA = Bank Address AP = Auto Precharge
NOP = No Operation Command CA = Column Address PA = Precharge All
Note: 1. All entries assume that CKE was active (High) during the preceding clock cycle and the current clock cycle.
2. Illegal to bank in specified state : Function may be legal in the bank indicated by BA, depending on the state of that
bank.
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA (and PA).
5. Illegal if any banks is not idle.
A43L2616B
(January, 2014, Version 1.4) 38 AMIC Technology, Corp.
Function Truth Table for CKE (Table 2)
Current
State CKE
n-1 CKE
n CS RA
S
CAS WE Address Action Note
H X X X X X X INVALID
L H H X X X X
Exit Self Refresh→ABI after tRC 6
L H L H H H X
Exit Self Refresh→ABI after tRC 6
L H L H H L X ILLEGAL
L H L H L X X ILLEGAL
L H L L X X X ILLEGAL
Self
Refresh
L L X X X X X NOP(Maintain Self Refresh)
H X X X X X X INVALID
L H H X X X X
Exit Power Down→ABI 7
L H L H H H X
Exit Power Down→ABI 7
L H L H H L X ILLEGAL
L H L H L X X ILLEGAL
L H L L X X X ILLEGAL
Both
Bank
Precharge
Power
Down
L L X X X X X NOP(Maintain Power Down Mode)
H H X X X X X Refer to Table 1
H L H X X X X Enter Power Down 8
H L L H H H X Enter Power Down 8
H L L H H L X ILLEGAL
H L L H L X X ILLEGAL
H L L L H X X ILLEGAL
H L L L L H X Enter Self Refresh 8
H L L L L L X ILLEGAL
All
Banks
Idle
L L X X X X X NOP
H H X X X X X Refer to Operat ions in Table 1
H L X X X X X Begin Clock Suspend next cycle 9
L H X X X X X Exit Clock Suspend next cycle 9
Any State
Other than
Listed
Above L L X X X X X Maintain clock Suspend
Abbreviations : ABI = All Banks Idle
Note: 6. After CKE’s low to high transition to exit self refresh mode. And a time of tRC(min) has to be elapse after CKE’s low
to high transition to issue a new command.
7. CKE low to high transition is asynchronous as if restarts internal clock.
A minimum setup time “tSS + one clock” must be satisfied before any command other than exit.
8. Power-down and self refresh can be entered only from the all banks idle state.
9. Must be a legal command.
A43L2616B
(January, 2014, Version 1.4) 39 AMIC Technology, Corp.
Part Numbering Scheme
A43 XX
Package Type
V: TSOP
G: CSP
Operating Vcc
L: 3V~3.6V
P: 2.3V~2.7V
E: 1.7V~2.0V
Device Version*
Device Type
A43: AMIC SDRAM
Device Density
06: 1M
16: 2M
26: 4M
36: 8M
46: 16M
56: 32M
83: 256K
Temperature
X
Package Material
Blank: normal
F: PB free
X
* Optional
XX
XX X
Mobile Function*
XX
Speed
95: 105 MHz
75: 133 MHz
7: 143 MHz
6: 166 MHz
55: 183 MHz
5: 200 MHz
I/O Width
08: 8 I/O
16: 16 I/O
32: 32 I/O
C70~C0:Blank °° grad
e
Industrial C85~C-40:U °° C85~C-40:A °°
A
utomative gr
a
A43L2616B
(January, 2014, Version 1.4) 40 AMIC Technology, Corp.
Ordering Information
Part No. Cycle Time (ns) Clock Frequency (MHz) Access Time Package
A43L2616BV-6F 54 Pb-Free TSOP (II)
A43L2616BV-6UF 6 166 @ CL = 3 5.0 ns 54 Pb-Free TSOP (II)
A43L2616BV-7F 54 Pb-Free TSOP (II)
A43L2616BV-7UF 7 143 @ CL = 3 6.0 ns 54 Pb-Free TSOP (II)
1. Pb-free for “-F” grade
2. Industrial for “-U” grade
A43L2616B
(January, 2014, Version 1.4) 41 AMIC Technology, Corp.
Package Information
TSOP 54 (Type II) Outline Dimensions unit: inches/mm
1
E1
E
c
54
A1A2
A
D
0.1
e
D
b
L
θ
Detail "A"
Detail "A"
27
28
Seating Plane
R1
R2
L
1
-C-
0.21 REF
0.665 REF
S
Dimensions in inches Dimensions in mm
Symbol Min Nom Max Min Nom Max
A - - 0.047 - - 1.20
A1 0.002 0.004 0.006 0.05 - 0.15
A2 0.037 0.039 0.041 0.95 1.00 1.05
b 0.012 - 0.018 0.30 - 0.45
c 0.005 - 0.008 0.12 - 0.21
D 0.875 BSC 22.22 BSC
S 0.028 REF 0.71 REF
E 0.463 BSC 11.76 BSC
E1 0.400 BSC 10.16 BSC
e 0.031 BSC 0.80 BSC
L 0.016 0.020 0.024 0.40 0.50 0.60
L1 0.031 REF 0.80 REF
R1 0.005 - - 0.12 - -
R2 0.005 - 0.010 0.12 - 0.25
θ 0° - 8° 0° - 8°
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E does not include resin fins.
3. Dimension S includes end flash.
