AON6276 80V N-Channel AlphaSGT TM General Description Product Summary * Trench Power AlphaSGTTM technology * Low RDS(ON) * Low Gate Charge * Low Eoss VDS 80V 100A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 2.6m RDS(ON) (at VGS=6V) < 3.5m 100% UIS Tested 100% Rg Tested * Secondary Synchronous Rectification MOSFET for Server and Telecom D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6276 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10s TC=25C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2016 IAS 73 A EAS 266 mJ 96 V 215 7.3 Steady-State Steady-State W 4.7 TJ, TSTG Symbol t 10s W 86 PDSM TA=70C A 31 PD TA=25C Power Dissipation A A 38.5 VSPIKE TC=100C V 355 IDSM TA=70C 20 100 IDM TA=25C Continuous Drain Current Units V 100 ID TC=100C Maximum 80 RJA RJC -55 to 150 Typ 14 40 0.43 www.aosmd.com C Max 17 50 0.58 Units C/W C/W C/W Page 1 of 6 AON6276 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Typ 80 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A 1 TJ=55C VGS=10V, ID=20A 100 nA 2.6 3.2 V 2.2 2.6 3.7 4.5 3.5 RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A 2.8 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 IS Maximum Body-Diode Continuous Current G TJ=125C DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qgs Gate Source Charge Qgd VGS=10V, VDS=40V, ID=20A A 5 2.1 0.3 Units V VDS=80V, VGS=0V IDSS Max m m S 1 V 100 A 4940 pF 770 pF 40 pF 0.7 1.2 68 100 nC 14.5 nC Gate Drain Charge 14 nC tD(on) Turn-On DelayTime 14 ns tr Turn-On Rise Time 8.5 ns tD(off) Turn-Off DelayTime 40 ns tf trr Turn-Off Fall Time 10 ns IF=20A, di/dt=500A/s 32 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/s 168 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=40V, RL=2.0, RGEN=3 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2016 www.aosmd.com Page 2 of 6 AON6276 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V 80 VDS=5V 80 6V 10V 4V 60 ID (A) ID (A) 60 40 40 125C 25C 20 20 VGS=3.5V 0 0 0 1 2 3 4 2 5 4 5 6 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 5 Normalized On-Resistance 2 4 RDS(ON) (m) 3 VGS=6V 3 2 VGS=10V 1 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=6V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 8 1.0E+01 ID=20A 1.0E+00 125C 1.0E-01 125C IS (A) RDS(ON) (m) 6 4 1.0E-02 25C 1.0E-03 2 25C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6276 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 7000 VDS=40V ID=20A 6000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 5000 4000 3000 2000 Coss 2 Crss 1000 0 0 0 20 40 60 80 0 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 70 80 500 RDS(ON) limited 100.0 TJ(Max)=150C TC=25C 10s 10s 400 100s 1ms 10ms 10.0 Power (W) ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 1.0 10 DC TJ(Max)=150C TC=25C 300 200 100 0.1 0.0 0.01 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=0.58C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2016 www.aosmd.com Page 4 of 6 AON6276 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 120 100 Current rating ID (A) Power Dissipation (W) 200 150 100 50 80 60 40 20 0 0 0 25 50 75 100 125 150 0 TCASE (C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2016 www.aosmd.com Page 5 of 6 AON6276 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: October 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6