AON6276
Symbol Min Typ Max Units
BV
DSS
80 V
V
DS
=80V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 2.1 2.6 3.2 V
2.2 2.6
T
J
=125°C 3.7 4.5
2.8 3.5 mΩ
g
FS
100 S
V
SD
0.68 1 V
I
S
100 A
C
iss
4940 pF
C
oss
770 pF
C
rss
40 pF
R
g
0.3 0.7 1.2 Ω
Q
g
(10V)
68 100 nC
Q
gs
14.5 nC
Q
gd
14 nC
t
D(on)
14 ns
t
r
8.5 ns
t
D(off)
40 ns
t
f
10 ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
mΩ
µA
V
DS
=0V, V
GS
=±20V
Gate-Body leakage current
Body Diode Reverse Recovery Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=40V, R
L
=2.0Ω,
R
GEN
=3Ω
Turn-On Rise Time
Turn-On DelayTime
Maximum Body-Diode Continuous Current
G
Input Capacitance
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=6V, I
D
=20A
I
DSS
Zero Gate Voltage Drain Current
R
DS(ON)
Static Drain-Source On-Resistance
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
V
DS
=V
GS,
I
D
=250µA
Forward Transconductance
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=40V, f=1MHz
f=1MHz
Output Capacitance
V
GS
=10V, V
DS
=40V, I
D
=20A
Total Gate Charge
Gate resistance
Q
rr
168 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, di/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: October 2016 www.aosmd.com Page 2 of 6