AON6276
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 100A
R
DS(ON)
(at V
GS
=10V) < 2.6mΩ
R
DS(ON)
(at V
GS
=6V) < 3.5mΩ
Applications
100% UIS Tested
100% Rg Tested
• Secondary Synchronous Rectification MOSFET for Server
and Telecom
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AON6276 DFN 5x6 Tape & Reel 3000
80V N-Channel AlphaSGT
Orderable Part Number Package Type Form Minimum Order Quantity
80V
• Trench Power AlphaSGT
TM
technology
• Low R
DS(ON)
• Low Gate Charge
• Low Eoss
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
PIN1
DFN5x6
Top View Bottom View
Symbol
V
DS
V
GS
I
DM
I
AS
Avalanche energy L=0.1mH
C
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Power Dissipation
B
86
T
C
=100°C
10µs
P
D
80
96
215
Gate-Source Voltage
Pulsed Drain Current
C
100
Parameter
Drain-Source Voltage
Continuous Drain
Current
G
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
0.43
50
0.58
V
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±20
V
Maximum Units
W
I
D
V
A73
A
355
I
DSM
31
mJ266
38.5
100
7.3
Power Dissipation
A
Maximum Junction-to-Ambient
A
°C/W
R
θJA
14
40
17
T
C
=25°C
Avalanche Current
C
Continuous Drain
Current
Thermal Characteristics
Parameter Max
T
A
=70°C 4.7
°C
Units
Junction and Storage Temperature Range -55 to 150
Typ
P
DSM
W
T
A
=25°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
Rev.1.0: October 2016
www.aosmd.com Page 1 of 6
AON6276
Symbol Min Typ Max Units
BV
DSS
80 V
V
DS
=80V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 2.1 2.6 3.2 V
2.2 2.6
T
J
=125°C 3.7 4.5
2.8 3.5 mΩ
g
FS
100 S
V
SD
0.68 1 V
I
S
100 A
C
iss
4940 pF
C
oss
770 pF
C
rss
40 pF
R
g
0.3 0.7 1.2 Ω
Q
g
(10V)
68 100 nC
Q
gs
14.5 nC
Q
gd
14 nC
t
D(on)
14 ns
t
r
8.5 ns
t
D(off)
40 ns
t
f
10 ns
t
rr
32
ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
mΩ
µA
V
DS
=0V, V
GS
=±20V
Gate-Body leakage current
Body Diode Reverse Recovery Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=40V, R
L
=2.0Ω,
R
GEN
=3Ω
I
F
=20A, di/dt=500A/
µ
s
Turn-On Rise Time
Turn-On DelayTime
Maximum Body-Diode Continuous Current
G
Input Capacitance
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=6V, I
D
=20A
I
DSS
Zero Gate Voltage Drain Current
R
DS(ON)
Static Drain-Source On-Resistance
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
V
DS
=V
GS,
I
D
=250µA
Forward Transconductance
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=40V, f=1MHz
f=1MHz
Output Capacitance
V
GS
=10V, V
DS
=40V, I
D
=20A
Total Gate Charge
Gate resistance
t
rr
32
ns
Q
rr
168 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, di/dt=500A/µs
I
F
=20A, di/dt=500A/
µ
s
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: October 2016 www.aosmd.com Page 2 of 6
AON6276
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
23456
ID (A)
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
0
1
2
3
4
5
0 5 10 15 20 25 30
RDS(ON) (mΩ)
I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=6V
ID=20A
VGS=10V
ID=20A
25°C
125°C
VDS=5V
VGS=6V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=3.5V
4V
6V
10V
4.5V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
0
2
4
6
8
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev.1.0: October 2016 www.aosmd.com Page 3 of 6
AON6276
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
0
2
4
6
8
10
0 20 40 60 80
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
1000
2000
3000
4000
5000
6000
7000
0 10 20 30 40 50 60 70 80
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=40V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
V
> or equal to 6V
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
10ms
Figure 10: Single Pulse Power Rating Junction
-
to
-
Case (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
V
GS
> or equal to 6V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
RθJC=0.58°C/W
Rev.1.0: October 2016 www.aosmd.com Page 4 of 6
AON6276
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
50
100
150
200
250
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
20
40
60
80
100
120
0 25 50 75 100 125 150
Current rating ID (A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
TA=25°C
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
RθJA=50°C/W
Rev.1.0: October 2016 www.aosmd.com Page 5 of 6
AON6276
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
L
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Resistive Switching Test Circuit & Waveforms
Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Vds
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Figure D: Diode Recovery Test Circuit & Waveforms
Rev.1.0: October 2016 www.aosmd.com Page 6 of 6