TIL191, TIL192, TIL193 TIL191A, TIL192A, TIL193A TIL191B, TIL192B, TIL193B HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, file no. E91231 Dimensions in mm 2.54 TIL191 TIL191A TIL191B 1 2 7.0 6.0 4 3 1.2 5.08 4.08 7.62 4.0 3.0 13 Max 0.5 3.0 TIL192 TIL192A TIL192B 0.26 3.35 0.5 2.54 7.0 6.0 l l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) All electrical parameters 100% tested Custom electrical selections available 1 8 2 3 7 6 5 4 1.2 10.16 9.16 7.62 4.0 3.0 13 Max 0.5 APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances 3.0 0.26 3.35 0.5 1 TIL193 TIL193A TIL193B 3 4 2.54 7.0 6.0 OPTION SM SURFACE MOUNT OPTION G 7.62 1.2 20.32 19.32 0.6 0.1 10.46 9.86 1.25 0.75 13 5 12 6 11 7 8 10 9 7.62 4.0 3.0 13 Max 0.5 0.26 10.16 16 15 14 2 3.0 0.5 3.35 0.26 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92493m-AAS/A2 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 5V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 35V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Output Coupled Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) MIN TYP MAX UNITS 1.2 10 Collector-emitter Breakdown (BVCEO) 35 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) TIL191, TIL192, TIL193 TIL191A, TIL192A, TIL193A TIL191B, TIL192B, TIL193B Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr 6 Output Fall Time tf 6 7/12/00 100 20 50 100 Collector-emitter Saturation VoltageVCE (SAT) Note 2 1.4 5 0.4 TEST CONDITION V V A IF = 20mA IR = 10A VR = 5V V IC =0.5mA V nA IE = 100A VCE = 24V % % % 5mA IF , 5V VCE V 5mA IF , 1mA IC VRMS VPK s s See note 1 See note 1 VIO = 500V (note 1) VC C = 5V , IC = 2mA, RL = 100 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92493m-AAS/A2 Collector Power Dissipation vs. Ambient Temperature 100 50 0 -30 0 25 50 75 100 125 6 4 3 2 1 0 0 5 Forward Current vs. Ambient Temperature 50 50 Collector current I C (mA) Forward current I F (mA) TA = 25C 30 50 40 30 20 10 0 20 40 15 30 10 20 10 IF = 5mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature (V) Current Transfer Ratio vs. Forward Current 320 0.28 280 0.24 Current transfer ratio CTR (%) CE(SAT) 15 Collector Current vs. Collector-emitter Voltage 60 Collector-emitter saturation voltage V 10 Forward current IF (mA) Ambient temperature TA ( C ) 7/12/00 TA = 25C Ic 5 15mA =1mA 3mA 5mA 10mA (V) 150 Collector-emitter saturation voltage V CE(SAT) 200 Collector power dissipation P C (mW) Collector-emitter Saturation Voltage vs. Forward Current IF = 5mA IC = 1mA 0.20 0.16 0.12 0.08 0.04 240 200 160 120 80 VCE = 5V TA = 25C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( C ) 100 1 2 5 10 20 50 Forward current IF (mA) DB92493m-AAS/A2