10.46
9.86
7/12/00
DB92493m-AAS/A2
0.26
20.32
19.32 4.0
3.0
0.5
7.62
13°
Max
7.0
6.0
2.54
1.2
0.5
3.0
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
1
2
4
3
0.26
13°
Max
2.54
10.16
0.26
7.62
3.0
10.16
9.16 4.0
3.0
3.35
0.5
7.0
6.0
7.62
2
3
4
7
6
5
1.2
13°
Max
0.5
0.26
2.54
Dimensions in mm
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
lUL recognised, file no. E91231
High Isolation Voltage (5.3kVRMS ,7.5kVPK )
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT OPTION G
3.35
5.08
4.08
1 8
TIL191, TIL192, TIL193
TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
TIL191
TIL191A
TIL191B
TIL192
TIL192A
TIL192B
TIL193
TIL193A
TIL193B
1
2
3
7
8
16
15
10
9
611
512
14
413
0.6
0.1 1.25
0.75
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park V iew Road W est,
Park V iew Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
DB92493m-AAS/A2
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.4 VIF = 20mA
Reverse Voltage (VR) 5 VIR = 10µA
Reverse Current (IR) 10 µAVR = 5V
Output Collector-emitter Breakdown (BVCEO)35 VIC =0.5mA
( Note 2 )
Emitter-collector Breakdown (BVECO) 6 VIE = 100µA
Collector-emitter Dark Current (ICEO)100 nA VCE = 24V
Coupled Current Transfer Ratio (CTR) (Note 2)
TIL191, TIL192, TIL193 20 %5mA IF , 5V VCE
TIL191A, TIL192A, TIL193A 50 %
TIL191B, TIL192B, TIL193B 100 %
Collector-emitter Saturation VoltageVCE (SAT) 0.4 V5mA IF , 1mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time tr 6µsVC C = 5V ,
Output Fall Time tf 6µsIC = 2mA, RL = 100Ω
Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
7/12/00
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 5V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 35V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
DB92493m-AAS/A2
7/12/00
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation P C (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Collector-emitter saturation voltage V CE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
TA = 25°C
0
1
2
3
4
5
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 5mA
IC = 1mA
Forward current I F (mA)
Collector-emitter Saturation
Voltage vs. Forward Current
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current I C (mA)
Current Transfer Ratio vs. Forward Current
Forward current IF (mA)
Current transfer ratio CTR (%)
1 2 5 10 20 50
0
80
120
160
200
240
0 2 4 6 8 10
0
10
20
30
40
50
40
50
30 20
10
15
TA = 25°C
280
320
IF = 5mA
Forward current IF (mA)
Collector-emitter saturation voltage V CE(SAT) (V)
Ic =1mA
3mA
5mA
10mA
15mA
0 5 10 15
6
VCE = 5V
TA = 25°C
Ambient temperature TA ( °C )