TC74HCT138AP - Toshiba America Electronic Components, Inc.

TC74HCT138AP/AF

2012-02-29

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74HCT138AP,TC74HCT138AF

3-to-8 Line Decoder

The TC74HCT138A is a high speed CMOS 3-to-8 LINE

DECODER fabricated with silicon gate C2MOS technology.

It achieves the high speed operation similar to equivalent

LSTTL while maintaining the CMOS low power dissipation.

This device may be used as a level converter for interfacing

TTL or NMOS to High Speed CMOS. The inputs are compatible

with TTL, NMOS and CMOS output voltage levels.

When the device is enabled, 3 Binary Select inputs (A, B and

C) determine which one of the outputs ( 0Y -7Y ) will go low.

When enable input G1 is held low or either 2AG or 2BG is

held high, decoding function is inhibited and all outputs go high.

G1, 2AG , and 2BG inputs are provided to ease cascade

connection and for use as an address decoder for memory

systems.

All inputs are equipped with protection circuits against static

discharge or transient excess voltage.

Features

• High speed: tpd = 17 ns (typ.) at VCC = 5 V

• Low power dissipation: ICC = 4 μA (max) at Ta = 25°C

• Compatible with TTL outputs: VIH = 2 V (min)

IL = 0.8 V (max)

• Wide interfacing ability: LSTTL, NMOS, CMOS

• Output drive capability: 10 LSTTL loads

• Symmetrical output impedance: |IOH| = IOL = 4 mA (min)

• Balanced propagation delays: tpLH ∼

−

tpHL

• Pin and function compatible with 74LS138

Pin Assignment

TC74HCT138AP

TC74HCT138AF

Weight

DIP16-P-300-2.54A : 1.00 g (typ.)

SOP16-P-300-1.27A : 0.18 g (typ.)

TC74HCT138AP/AF

2012-02-29

IEC Logic Symbol

Truth Table

Inputs Outputs

Enable Select

G1 A2G B2G C B A

0Y 1Y 2Y 3Y 4Y 5Y 6Y 7Y

Selected

Output

L X X X X X H H H H H H H H None

X H X X X X H H H H H H H H None

X X H X X X H H H H H H H H None

H L L L L L L H H H H H H H 0Y

H L L L L H H L H H H H H H 1Y

H L L L H L H H L H H H H H 2Y

H L L L H H H H H L H H H H 3Y

H L L H L L H H H H L H H H 4Y

H L L H L H H H H H H L H H 5Y

H L L H H L H H H H H H L H 6Y

H L L H H H H H H H H H H L 7Y

X: Don’t care

Logic Diagram

TC74HCT138AP/AF

2012-02-29

Absolute Maximum Ratings (Note 1)

Characteristics Symbol Rating Unit

Supply voltage range VCC −0.5~7.0 V

DC input voltage VIN −0.5~VCC + 0.5 V

DC output voltage VOUT −0.5~VCC + 0.5 V

Input diode current IIK ±20 mA

Output diode current IOK ±20 mA

DC output current IOUT ±25 mA

DC VCC/ground current ICC ±50 mA

Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW

Storage temperature Tstg −65~150 °C

Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or

even destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be

applied until 300 mW.

Operating Ranges (Note)

Characteristics Symbol Rating Unit

Supply voltage VCC 4.5~5.5 V

Input voltage VIN 0~VCC V

Output voltage VOUT 0~VCC V

Operating temperature Topr −40~85 °C

Input rise and fall time tr, tf 0~500 ns

Note: The operating ranges must be maintained to ensure the normal operation of the device.

Unused inputs must be tied to either VCC or GND.

Electrical Characteristics

DC Characteristics

Test Condition Ta = 25°C Ta = −40~85°C

Characteristics Symbol

CC (V) Min Typ. Max Min Max

Unit

High-level input

voltage VIH ⎯ 4.5~5.5 2.0 ⎯ ⎯ 2.0 ⎯ V

Low-level input

voltage VIL ⎯ 4.5~5.5 ⎯ ⎯ 0.8 ⎯ 0.8 V

IOH = −20 μA 4.5 4.4 4.5 ⎯ 4.4 ⎯

High-level output

voltage VOH VIN

= VIH or VIL IOH = −4 mA 4.5 4.18 4.31 ⎯ 4.13 ⎯ V

IOL = 20 μA 4.5 ⎯ 0.0 0.1 ⎯ 0.1

Low-level output

voltage VOL VIN

= VIH or VIL IOL = 4 mA 4.5 ⎯ 0.17 0.26 ⎯ 0.33 V

Input leakage

current IIN VIN = VCC or GND 5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA

ICC VIN = VCC or GND 5.5 ⎯ ⎯ 4.0 ⎯ 40.0 μA

Quiescent supply

current IC

Per input:

VIN = 0.5 V or 2.4 V

Other input: VCC or GND

5.5 ⎯ ⎯ 2.0 ⎯ 2.9 mA

TC74HCT138AP/AF

2012-02-29

AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns)

Characteristics Symbol Test Condition Min Typ. Max Unit

Output transition time tTLH

tTHL

⎯ ⎯ 4 8 ns

Propagation delay time

(A, B, C- Y)

tpLH

tpHL

⎯ ⎯ 17 28 ns

Propagation delay time

(G1- Y)

tpLH

tpHL

⎯ ⎯ 15 25 ns

Propagation delay time

(2G-Y)

tpLH

tpHL

⎯ ⎯ 17 28 ns

AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns)

Test Condition Ta = 25°C Ta = −40~85°C

Characteristics Symbol

VCC (V) Min Typ. Max Min Max

Unit

Output transition time tTLH

tTHL

⎯ 4.5

5.5

⎯

18 ns

Propagation delay

time

(A, B, C- Y)

tpLH

tpHL

⎯ 4.5

5.5

⎯

40 ns

Propagation delay

time

(G1- Y)

tpLH

tpHL

⎯ 4.5

5.5

⎯

34 ns

Propagation delay

time

(2G-Y)

tpLH

tpHL ⎯

4.5

5.5

⎯

37 ns

Input capacitance CIN ⎯ ⎯ 5 10 ⎯ 10 pF

Power dissipation

capacitance

CPD

(Note) ⎯ ⎯ 55 ⎯ ⎯ ⎯ pF

Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating

current consumption without load.

Average operating current can be obtained by the equation:

ICC (opr) = CPD･VCC･fIN + ICC

TC74HCT138AP/AF

2012-02-29

Package Dimensions

Weight: 1.00 g (typ.)

TC74HCT138AP/AF

2012-02-29

Package Dimensions

Weight: 0.18 g (typ.)

TC74HCT138AP/AF

2012-02-29

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