PACKAGE DIMENSIONS
SCHEMATIC
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE113
4/30/02
Page 1 of 4
© 2002 Fairchild Semiconductor Corporation
DESCRIPTION
The QEE113 is a 940 nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package.
FEATURES
•
λ
= 940 nm
• Package Type = Sidelooker
• Chip Material = GaAs
• Matched Photosensor: QSE113
• Medium Wide Emission Angle, 50°
• Package Material: Clear Epoxy
• High Output Power
• Gray stripe on the top side
0.175 (4.44)
0.200 (5.08)
0.050 (1.27)
0.020 (0.51) SQ.
(2X)
0.500 (12.70)
MIN
Ø0.065 (1.65)
Ø0.095 (2.41)
CATHODE
ANODE
0.100 (2.54)
0.100 (2.54)
NOM
0.030 (0.76)
0.087 (2.22)
ANODE
CATHODE
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specified.
4/30/02
Page 2 of 4
© 2002 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE113
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-40 to +100 °C
Storage Temperature T
STG
-40 to +100 °C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
50 mA
Reverse Voltage V
R
5V
Power Dissipation
(1)
P
D
100 mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25°C)
Parameter Test Conditions Symbol Min Typ Max Units
Peak Emission Wavelength I
F
= 100 mA
λ
PE
—940 —nm
Emission Angle I
F
= 100 mA 2
Θ
1/2 —50 —Deg.
Forward Voltage I
F
= 100 mA, tp = 20 ms V
F
——1.5 V
Reverse Current V
R
= 5 V I
R
——10 µA
Radiant Intensity I
F
= 100 mA, tp = 20 ms I
E
3—12 mW/sr
Rise Time I
F
= 100 mA t
r
—1000 —ns
Fall Time t
f
—1000 —ns
4/30/02
Page 3 of 4
© 2002 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE113
Fig.1 Normalized Radiant Intensity vs. Forward Current
I
F
- FORWARD CURRENT (mA) LENS TIP SEPARATION (INCHES)
1 10 100 1000
I
e
- NORMALIZED RADIANT INTENSITY
V
F
- FORWARD VOLTAGE (V)
0.001
0.01
0.1
1
10
Fig.2 Coupling Characteristics of QEE113 And QSE113
0123456
I
C
(ON) - NORMALIZED COLLECTOR CURRENT (mA)
0.0
0.2
0.4
0.6
0.8
1.0
I
F
= 20 mA
Fig.3 Forward Voltage vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (˚C)
-40 -20 0 20 40 60 80 100
0.0
0.5
1.0
1.5
2.0
Normalized to:
I
F
Pulsed
t
pw
= 100 µs
Duty Cycle = 0.1 %
I
F
= 100 mA
I
F
= 10 mA
I
F
= 50 mA
Fig. 5
Radiation Diagram
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0 0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Fig. 4 Normalized Intensity vs. Wavelength
λ (nm)
875 900 925 950 975 1000 1025
NORMALIZED INTENSITY
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Normalized to:
I
F
= 100 mA Pulsed
t
pw
= 100 µs
Duty Cycle = 0.1 %
T
A
= 25˚C
I
F
= 100 mA
Normalized to:
d = 0
I
F
Pulsed
t
pw
= 100 µs
Duty Cycle = 0.1 %
V
CC
= 5 V
R
L
= 100 Ω
T
A
= 25˚C
I
F
= 20 mA
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
4/30/02
Page 4 of 4
© 2002 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE113
Product Folder - Fairchild P/N QEE113 - Plastic Infrared Light Emitting Diode
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Contents
General description | Features | Testing
conditions | Product status/pricing/packaging
General description
The QEE113 is a 940 nm GaAs LED
encapsulated in a medium wide angle, plastic
sidelooker package.
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Features
● λ = 940 nm
● Package type: sidelooker
● Chip material = GaAs
● Matched photosensor: QSE113
● Medium wide emission angle, 50°
● Package material: clear epoxy
● High output power
● Gray stripe on the top side
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Datasheet
Download this
datasheet
PDF
e-mail this datasheet
[E-
mail]
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Print version
Testing conditions
● Ie @ IF = 100 mA pulsed
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Product status/pricing/packaging
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Product Folder - Fairchild P/N QEE113 - Plastic Infrared Light Emitting Diode
Product Product status Pricing* Inventory check &
ordering Package type Packing method
QEE113 Full Production $0.114
Purchase
Sidelooker BULK
QEE113.E3R0 Full Production $0.124
Purchase
Sidelooker TAPE REEL
* Fairchild 1,000 piece Budgetary Pricing
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