SKKH210/22E - Semikron - Datasheet.Live

SEMIPACK

®

3

Thyristor/ Diode Modules

SKKT 210 SKKH 210

SKKT 250 SKKH 250

SKMT 250

1)

SKKT SKKH

SKMT

Features

•Heat transfer through aluminium

nitride ceramic isolated metal

baseplate

•Precisious metal pressure

contacts for high reliability

•UL recognized, file no. E 63 532

Typical Applications

•DC motor control (e. g. for

machine tools)

•Temperature control (e. g. fo r

ovens, chemical processes)

•Professional light dimming

(studios, theaters)

V

RSM

V

RRM

(dv/ I

TRMS

(maximum values for co ntinuous operation)

V

DRM

dt)

cr

350 A 420 A 420 A

I

TAV

(sin. 180; T

case

= . . .)

VVV/µs 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C)

SKKT SKKT SKKH SKKH

900 800 500 210/08 D 250/08 D – –

1300 1200 500 – 250/12 D – –

1300 1200 1000 210/12 E 250/12 E 210/12 E 250/12 E

1500 1400 1000 210/14 E 250/14 E 210/14 E 250/14 E

1700 1600 1000 210/16 E 250/16 E 210/16 E 250/16 E

1900 1800 1000 210/18 E 250/18 E 210/18 E 250/18 E

2100 2000 1000 210/20 E – 210/20 E –

2300 2200 1000 210/22 E – 210/22 E –

1)

SKMT 250 available on request

2)

See the assembly instructions

3)

The screws must be lubricated

Symbol Conditions SKKT 210 SKKT 250 Units

SKKH 210 SKKH 250

I

TAV

sin. 180; (T

case

= ...) 210 (90°C) 250 (85°C) A

I

D

B2/B6 T

amb

= 35 °C; 420/550 450/585 A

I

RMS

W1/W3 P 16/200 F 526/3 x 440 566/3 x 471 A

I

TSM

T

vj

= 25 °C; 10 ms 8500 9000 A

T

vj

= 130 °C; 10 ms 7500 8000 A

i

2

tT

vj

= 25 °C; 8,3 ... 10 ms 361 000 405 000 A

2

s

T

vj

= 130 °C; 8,3 ... 10 ms 281 000 320 000 A

2

s

t

gd

T

vj;

= 25 °C; I

G

= 1 A;

di

G

/dt = 1 A/µs1µs

t

gr

V

D

= 0,67 . V

DRM

2µs

(di/dt)

cr

T

vj

= 130 °C 250 A/µs

t

q

T

vj

= 130 °C typ. 50 . . . 150 µs

I

H

T

vj

= 25 °C typ. 150; max. 500 mA

I

L

T

vj

= 25 °C; R

G

= 33 Ωtyp. 0,3; max. 2 A

V

T

vj

= 25 °C; I

T

= 750 A max. 1,5 max. 1,4 V

V

T(TO)

T

vj

= 130 °C 0,95 0,925 V

r

T

vj

= 130 °C 0,6 0,45 mΩ

I

DD

; I

RD

T

vj

= 130 °C; V

RD

= V

RRM

V

DD

= V

DRM

50 50 mA

V

GT

T

vj

= 25 °C; d.c. 3 V

I

GT

T

vj

= 25 °C; d.c. 200 mA

V

GD

T

vj

= 130 °C; d.c. 0,25 V

I

GD

T

vj

= 130 °C; d.c. 10 mA

R

thjc

cont. 0,14/0,07 °C/W

sin. 180 per thyristor/ 0,15/0,075 °C/W

rec. 120 per module 0,165/0,083 °C/W

R

thch

0,04/0,02 °C/W

T

vj

– 40 ... + 130 °C

T

stg

– 40 ... + 130 °C

V

isol

a. c. 50 Hz; r.m.s.; 1 s/1 min 3600/3000 V~

M

1

to heatsink SI units 5 ± 15 %

2)

Nm

US units 44 ± 15 %

2)

lb.in.

M

2

to terminals SI units 9 ± 15 %

3)

Nm

US units 80 ± 15 %

3)

lb.in.

a5

. 9,81 m/s

2

w approx. 940 g

Case → page B 1 – 82 SKKT: A 25 SKMT 250: A 64

SKKH: A 26

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