1N3611EG1 - Semtech - Datasheet.Live

INCH POUND

MIL-PRF-19500/228J

16 July 2001

SUPERSEDING

MIL-PRF-19500/228H

14 September 1997

PERFORMANCE SPECIFICATION SHEET

*SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,

TYPES 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, 1N3611EG1, 1N3612EG1,

1N3613EG1, 1N3614EG1, 1N3957EG1, JAN AND JANTX

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 1.0 ampere silicon rectifier diodes. Two

levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

* 1.2 Physical dimensions. See figure 1, similar to DO - 41, and figure 2, epoxy-glass case outline.

* 1.3 Maximum ratings.

Types VRWM IOIFSM Barometric

pressure

(reduced)

TSTG and TJR

L = .375 inch

(9.53 mm)

At: TA =

+100

(1) (2)

At: TA =

+150

(1) (2)

TA = +25

IO = 1 A dc

tp = 8.0 ms

1N3611, EG1 (3)

1N3612, EG1 (3)

1N3613, EG1 (3)

1N3614 , EG1 (3)

1N3957, EG1 (3)

V(pk)

200

400

600

800

1,000

A dc

mA dc

300

A(pk)

mmHg

-65 to +175

C/W

(1) From IO rating is independent of heat sinking, special mounting, or leads of the device.

(2) Derate linearly at 13.3 mA between TA = +100

C and TA = +175

(3) See 3.7 note.

AMSC N/A FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 16 September, 2001.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

MIL-PRF-19500/228J

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. W hile every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and

supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

DEPARTMENT OF DEFENSE

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the

Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,

Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

MIL-PRF-19500/228J

Dimensions

Symbol Inches Millimeters Notes

Min Max Min Max

BD .060 .110 1.52 2.79

BL .140 .205 3.56 5.21

LD .025 .034 0.64 0.86 3

LL .600 1.500 15.24 38.10 4

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. Dimension LD shall be measured at the largest diameter.

4. Dimension BD shall include the sections of the lead over which the diameter is uncontrolled.

This uncontrolled area is defined as the zone between the edge of the diode body and extending

.050 inch (1.27 mm) onto the leads.

5. See 3.7 note.

FIGURE 1. Physical dimensions.

MIL-PRF-19500/228J

*FUGURE 2 Epoxy-Glass (EG1 case outline) construction (for reference only) See 3.7 note.

MIL-PRF-19500/228J

3. REQUIREMENTS

3.1 General. The requirements for acquiring the product described herein shall consist of this document and

MIL-PRF-19500.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

* 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

EG - Epoxy over Glass hermetically sealed EG1 case.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figure 1 herein. No lead (Pb) shall be used in the construction of the die bonds.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

* 3.4.2 Diode construction. These devices shall be constructed utilizing non-cavity double plug construction with

high temperature bonding between both sides of the silicon die and terminal pins. Figure 2, Epoxy-Glass (EG1 case

outline) construction for reference only.

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, and table I.

3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and

4.4.3.

3.7 Marking. Devices shall be marked as specified in MIL-PRF-19500.

Note: The EG1 version, Epoxy over Glass construction, in this specification is a construction identifier. It denotes a

type of design and not a change in package outline. . EG1 is not intended to be a package outline identifier. The

EG1 version meets all of the requirements of a non EG1 version including case outline, hermeticity, and electricals

parameters. The EG1 may be marked and shipped as a non EG1 part number because it is an equivalent device in

terms of form, fit, and function. The EG1 is interchangeable and substitutable for the non EG1 version.

3.8 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end or the use of

other techniques considered commercial practice.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

MIL-PRF-19500/228J

4.3 Screening (JANTX level only). Screening shall be in accordance with (Appendix E, table IV), of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see

appendix E, Measurement

table IV of

MIL-PRF-19500) JANTX level

9 Not applicable

11 IR1 and VF1

12 See 4.3.1

13 Subgroup 2 of table I herein.

IR1 = 100 percent of initial reading

± 50 nA dc, whichever is greater.

VF1 = ± 0.1 V dc.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1038, of MIL-STD-750

condition B, TA = room ambient as defined in the general requirements in 4.5 of MIL-PRF-19500; VRWM = full rated

VRWM (see 1.3); f = 50 to 60 Hz; IO = 1 A; 96 hours.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of

MIL-PRF-19500 and table I herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table VIb (JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical

measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II

herein.

4.4.2.1 Group B inspection, appendix E, table VIb of MIL-PRF-19500.

Subgroup Method Conditions

B2 4066 IFSM = 30 A(pk), 10 surges of 8.3 ms each at 1 minute intervals, IO = 1 A dc,

VRWM = rated VRWM (see 1.3), TA = +25

C. Sampling plan = 10.

B3 1026 TA = +150

C ± 5

C, IO = 300 mA, VR = rated VRWM (see 1.3), t = 340 hours,

f = 60 Hz.

B5 3101 +25

+35

C (recorded before test is performed),

or R

maximum rated R

JL (see 1.3).

4081

B6 1032 TA = +175

C, t = 340 hours.

MIL-PRF-19500/228J

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points)

and delta requirements shall be in accordance with the applicable steps of table II herein.

4.4.3.1 Group C inspection appendix E, table VII of MIL-PRF-19500.

Subgroup Method Conditions

C2 2036 Test condition A, weight = 4 pounds, t = 15 s.

C2 2036 Test condition E.

C5 1001 VRWM = rated VRWM (see 1.3), pressure = rated pressure (see 1.3), t = 1

minute, sampling plan = 15.

C6 1026 TA = 150

C ± 5

C, IO = 300 mA, VRWM = rated VRWM (see 1.3),

f = 60 Hz.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Burn-in and steady-state operation life tests. These tests shall be conducted with a half-sine waveform of

the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of

the specified average rectified current. The forward conduction angle of the rectified current shall be neither greater

than 180 degrees, nor less than 150 degrees.

4.5.2 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

MIL-PRF-19500/228J

TABLE I. Group A inspection.

Inspection 1/ MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 1

Visual and mechanical

inspection 2071

Subgroup 2

Forward voltage 4011 IF = 1 A dc (pulsed)

(see 4.5.2); duty cycle

= 2 percent maximum.

VF1 .6 1.1 V pk

Reverse current

leakage 4016 VR = rated VRWM

(see 1.3) DC method. IR1 1.0

A dc

Subgroup 3

High temperature

operation: TA = 150

Reverse current

leakage 4016 VR = rated VRWM

(see 1.3) DC method. IR2 300

a dc

Low temperature

operation: TA = -65

Forward voltage 4011 IF = 1.0 A dc (pulsed)

(see 4.5.2). VF2 0.6 1.5 V dc

1/ For sampling plan, see MIL-PRF-19500.

MIL-PRF-19500/228J

TABLE II. Groups A, B, and C electrical measurements. 1/ 2/

Step Inspection MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

1. Forward voltage 4011 IF = 1.0 A dc pulse width

= 8.3 ms maximum, duty

cycle = 2 percent maximum.

VF1 0.6 1.1 V dc

2. Reverse current 4016 DC method; VR = rated

(see 1.3). IR1 1.0

A dc

3. Forward voltage 4011 IF = 1.0 A dc

pulse width = 8.3 ms

VF2 ± 0.1 V dc

maximum

maximum; duty cycle

= 2 percent maximum.

4. Reverse current 4016 DC method; VR = rated

(see 1.3).

IR1 ± 50 nA dc or 100

percent

of initial value,

whichever is greater.

1/ The electrical measurements for appendix E, table VIb (JANTX) of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table II herein, steps 1 and 2.

b. Subgroup 3, see table II herein, steps 1, 2, 3, and 4.

c. Subgroup 6, see table II herein, steps 1 and 2.

d. Subgroup 7, see table II herein, steps 1 and 2.

2/ The electrical measurements for appendix E, table VII of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table II herein, steps 1 and 2.

b. Subgroup 3, see table II herein, steps 1 and 2.

c. Subgroup 5, see table II herein, step 2.

d. Subgroup 6, see table II herein, steps 1 and 2.

MIL-PRF-19500/228J

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or

order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to

contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements

are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,

or within the Military Department's System Command. Packaging data retrieval is available from the managing

Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the

responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents must specify the following:

a. Title, number, and date of this specification.

b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents

referenced (see 2.2.1).

c. Packaging requirements (see 5.1).

d. Lead finish (see 3.4.1).

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which

are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.

6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - NW

Air Force - 11 (Project 5961-2489)

DLA - CC

Review activities:

Army - AR, AV, MI, SM

Navy - AS, MC

Air Force - 19, 70, 99

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements

on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the

referenced document(s) or to amend contractual requirements.

I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER

MIL-PRF-19500/228J 2. DOCUMENT DATE

16 July 2001

3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N3611, 1N3612, 1N3613,

1N3614, 1N3957, 1N3611EG1, 1N3612EG1, 1N3613EG1, 1N3614EG1, 1N3957EG1, JAN AND JANTX

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as

needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial) b. ORGANIZATION

c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code)

COMMERCIAL

DSN

FAX

7. DATE SUBMITTED

8. PREPARING ACTIVITY

a. Point of Contact

Alan Barone

b. TELEPHONE

Commercial DSN FAX EMAIL

614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil

c. ADDRESS

Defense Supply Center Columbus

ATTN: DSCC-VAC

P.O. Box 3990

Columbus, OH 43216-5000

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Standardization Program Office (DLSC-LM)

8725 John J. Kingman, Suite 2533

Fort Belvoir, VA 22060-6221

Telephone (703) 767-6888 DSN 427-6888

DD Form 1426, Feb 1999 (EG) Previous editions are obsolete WHS/DIOR, Feb 99