2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 -- 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C - - 20 V ID drain current Tamb = 25 C; VGS = 10 V - - 300 mA RDSon drain-source on-state resistance Tj = 25 C; VGS = 10 V; ID = 500 mA - 1 1.6 [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 S1 source 1 2 G1 gate 1 3 D2 drain 2 4 S2 source 2 5 G2 gate 2 6 D1 drain 1 Simplified outline 6 1 Graphic symbol 4 5 2 3 1 6 2 5 3 4 017aaa055 3. Ordering information Table 3. Ordering information Type number 2N7002BKS Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002BKS ZT* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 60 V - 20 V Tamb = 25 C - 300 mA Tamb = 100 C - 215 mA Per transistor VDS drain-source voltage Tamb = 25 C VGS gate-source voltage Tamb = 25 C ID 2N7002BKS Product data sheet drain current VGS = 10 V All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 [1] (c) NXP B.V. 2010. All rights reserved. 2 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET Table 5. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IDM peak drain current Tamb = 25 C; single pulse; tp 10 s - 1.2 A Ptot total power dissipation Tamb = 25 C [2] - 295 mW [1] - 340 mW - 1040 mW Tsp = 25 C Source-drain diode Tamb = 25 C [1] - 300 mA electrostatic discharge voltage human body model [3] - 2000 V Ptot total power dissipation Tamb = 25 C [2] - 445 mW Tj junction temperature 150 C Tamb ambient temperature -55 +150 C Tstg storage temperature -65 +150 C source current IS ESD maximum rating VESD Per device [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa001 120 Pder (%) Ider (%) 80 80 40 40 0 -75 -25 25 75 0 -75 125 175 Tamb (C) P tot P der = ------------------------ x 100 % P tot ( 25C ) Fig 1. 017aaa002 120 Product data sheet 25 75 125 175 Tamb (C) ID I der = -------------------- x 100 % I D ( 25C ) Normalized total power dissipation as a function of ambient temperature 2N7002BKS -25 Fig 2. Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 3 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa056 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10-1 (3) (4) (5) 10-2 (6) 10-3 10-1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 s (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 C (5) tp = 100 ms (6) DC; Tamb = 25 C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [1] - 370 425 K/W [2] - 320 370 K/W - - 120 K/W - - 275 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Per device Rth(j-a) 2N7002BKS Product data sheet thermal resistance from junction to ambient in free air [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 4 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa057 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.25 102 10 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa058 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 10 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 5 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 1.1 1.6 2.1 V Tj = 25 C - - 1 A Tj = 150 C - - 10 A - - 10 A - 1.3 2 - 1 1.6 - 550 - mS - 0.5 0.6 nC - 0.2 - nC - 0.1 - nC - 33 50 pF - 7 - pF - 4 - pF - 5 10 ns - 6 - ns - 12 24 ns - 7 - ns 0.47 0.75 1.1 V Static characteristics V(BR)DSS drain-source breakdown ID = 10 A; VGS = 0 V voltage VGS(th) gate-source threshold voltage ID = 250 A; VDS = VGS IDSS drain leakage current VDS = 60 V; VGS = 0 V IGSS RDSon gate leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V [1] VGS = 5 V; ID = 50 mA VGS = 10 V; ID = 500 mA forward transconductance gfs VDS = 10 V; ID = 200 mA [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time ID = 300 mA; VDS = 30 V; VGS = 4.5 V VGS = 0 V; VDS = 10 V; f = 1 MHz VDD = 50 V; RL = 250 ; VGS = 10 V; RG = 6 Source-drain diode VSD [1] 2N7002BKS Product data sheet source-drain voltage IS = 115 mA; VGS = 0 V Pulse test: tp 300 s; 0.01. All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 6 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa039 0.7 VGS = 4.0 V ID (A) 0.6 017aaa040 10-3 3.5 V ID (A) 3.25 V 0.5 10-4 (1) 0.4 (3) (2) 3.0 V 0.3 10-5 2.75 V 0.2 2.5 V 0.1 0.0 0.0 1.0 2.0 3.0 4.0 10-6 0.0 1.0 2.0 VDS (V) 3.0 VGS (V) Tamb = 25 C Tamb = 25 C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa041 6.0 RDSon () Sub-threshold drain current as a function of gate-source voltage 017aaa042 6.0 RDSon () (1) 4.0 4.0 (2) (3) 2.0 (1) 2.0 (4) (2) (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 ID (A) Tamb = 25 C 4.0 6.0 8.0 10.0 VGS (V) ID = 500 mA (1) VGS = 3.25 V (1) Tamb = 150 C (2) VGS = 3.5 V (2) Tamb = 25 C (3) VGS = 4 V (4) VGS = 5 V (5) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values 2N7002BKS Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 7 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa043 1.0 ID (A) 017aaa044 2.4 a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 0.0 0.0 1.0 2.0 3.0 4.0 5.0 VGS (V) 0.0 -60 VDS > ID x RDSon 0 60 120 180 Tamb (C) R DSon a = ----------------------------R DSon ( 25C ) (1) Tamb = 25 C (2) Tamb = 150 C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa045 3.0 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa046 102 (1) C (pF) (1) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 -60 0 60 120 180 Tamb (C) ID = 0.25 mA; VDS = VGS 1 10-1 f = 1 MHz; VGS = 0 V (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of ambient temperature Product data sheet 102 10 VDS (V) (1) maximum values 2N7002BKS 1 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 8 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 017aaa047 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 0.8 QG (nC) QGD QG(tot) 003aaa508 ID = 300 mA; VDD = 6 V; Tamb = 25 C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa048 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 C (2) Tamb = 25 C Fig 16. Source current as a function of source-drain voltage; typical values 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 9 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 8. Test information P t2 duty cycle = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 10 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 18. Package outline SOT363 (SC-88) 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 11 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2x) 0.6 0.5 (4x) (4x) solder resist solder paste 0.5 (4x) 0.6 (2x) occupied area 0.6 (4x) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 20. Wave soldering footprint SOT363 (SC-88) 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 12 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002BKS v.2 20100923 Product data sheet - 2N7002BKS v.1 - - Modifications: 2N7002BKS v.1 2N7002BKS Product data sheet * Table 2 "Pinning": graphic symbol amended 20100617 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 13 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). 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Export might require a prior authorization from national authorities. 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 14 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2N7002BKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 23 September 2010 (c) NXP B.V. 2010. All rights reserved. 15 of 16 2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 September 2010 Document identifier: 2N7002BKS Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: 2N7002BKS,115