LLZ Series
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
FaxBack +86-512-66607370 1/4
Zener diode
Features
1. Low leakage
2. High reliability
Applications
Voltage st abili zation
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃ Parameter Test Conditions Type Symbol Value Unit
Power dissipation RthJA≦300K/W P
V 500 mW
Junction temperature Tj 175 ℃
Storage temperature range Tstg -65~+175 ℃
Maximum Thermal Resistance
Tj=25℃ Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mm×50mm×1.6mm RthJA 500 K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
LLZ Series
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
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Electrical Characteristics
Tj=25℃ Zener voltage Operating
resistance Rising operating
resistance Reverse current
Vz (V) Zzt (Ω) Zzk (Ω) IR (μA)
Type
Rank Min. Max. Iz (mA) Max. Iz (mA) Max. Iz (mA) Max. VR (V)
A 1.88 2.10
LLZ 2.0 B 2.02 2.20 20 140 20 2000 1 120 0.5
A 2.12 2.30
LLZ 2.2 B 2.22 2.41 20 120 20 2000 1 120 0.7
A 2.33 2.52
LLZ 2.4 B 2.43 2.63 20 100 20 2000 1 120 1.0
A 2.54 2.75
LLZ 2.7 B 2.69 2.91 20 100 20 1000 1 120 1.0
A 2.85 3.07
LLZ 3.0 B 3.01 3.22 20 80 20 1000 1 50 1.0
A 3.16 3.38
LLZ 3.3 B 3.32 3.53 20 70 20 1000 1 20 1.0
A 3.46 3.69
LLZ 3.6 B 3.60 3.84 20 60 20 1000 1 10 1.0
A 3.74 4.01
LLZ 3.9 B 3.89 4.16 20 50 20 1000 1 5 1.0
A 4.04 4.29
B 4.17 4.43
LLZ 4.3 C 4.30 4.57 20 40 20 1000 1 5 1.0
A 4.44 4.68
B 4.55 4.80
LLZ 4.7 C 4.68 4.93 20 25 20 900 1 5 1.0
A 4.81 5.07
B 4.94 5.20
LLZ 5.1 C 5.09 5.37 20 20 20 800 1 5 1.5
A 5.28 5.55
B 5.45 5.73
LLZ 5.6 C 5.61 5.91 20 13 20 500 1 5 2.5
A 5.78 6.09
B 5.96 6.27
LLZ 6.2 C 6.12 6.44 20 10 20 300 1 5 3.0
A 6.29 6.63
B 6.49 6.83
LLZ 6.8 C 6.66 7.01 20 8 20 150 0.5 2 3.5
A 6.85 7.22
B 7.07 7.45
LLZ 7.5 C 7.29 7.67 20 8 20 120 0.5 0.5 4.0
A 7.53 7.92
B 7.78 8.19
LLZ 8.2 C 8.03 8.45 20 8 20 120 0.5 0.5 5.0
A 8.29 8.73
B 8.57 9.01
LLZ 9.1 C 8.83 9.30 20 8 20 120 0.5 0.5 6.0
LLZ Series
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
FaxBack +86-512-66607370 3/4
Zener voltage Operating
resistance Rising operating
resistance Reverse current
Vz (V) Zzt (Ω) Zzk (Ω) IR (μA)
Type
Rank Min. Max. Iz (mA) Max. Iz (mA) Max. Iz (mA) Max. VR (V)
A 9.12 9.59
B 9.41 9.90
C 9.70 10.20
LLZ 10
D 9.94 10.44
20 8 20 120 0.5 0.2 7.0
A 10.18 10.71
B 10.50 11.05
LLZ 11 C 10.82 11.38 10 10 10 120 0.5 0.2 8.0
A 11.13 11.71
B 11.44 12.03
LLZ 12 C 11.74 12.35 10 12 10 110 0.5 0.2 9.0
A 12.11 12.75
B 12.55 13.21
LLZ 13 C 12.99 13.66 10 14 10 110 0.5 0.2 10
A 13.44 14.13
B 13.89 14.62
LLZ 15 C 14.35 15.09 10 16 10 110 0.5 0.2 11
A 14.80 15.57
B 15.25 16.04
LLZ 16 C 15.69 16.51 10 18 10 150 0.5 0.2 12
A 16.22 17.06
B 16.82 17.70
LLZ 18 C 17.42 18.33 10 23 10 150 0.5 0.2 13
A 18.20 18.96
B 18.63 19.59
C 19.23 20.22
LLZ 20
D 19.72 20.72
10 28 10 200 0.5 0.2 15
A 20.15 21.20
B 20.64 21.71
C 21.08 22.17
LLZ 22
D 21.52 22.63
5 30 5 200 0.5 0.2 17
A 22.05 23.18
B 22.61 23.77
C 23.12 24.13
LLZ 24
D 23.63 24.85
5 35 5 200 0.5 0.2 19
A 24.26 25.52
B 24.97 26.26
C 25.63 26.95
LLZ 27
D 26.29 27.64
5 45 5 250 0.5 0.2 21
A 26.99 28.39
B 27.70 29.13
C 28.36 29.82
LLZ 30
D 29.02 30.51
5 55 5 250 0.5 0.2 23
LLZ Series
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
FaxBack +86-512-66607370 4/4
LLZener volta ge Operating
resistance Rising operating
resistance Reverse current
Vz (V) Zzt (Ω) Zzk (Ω) IR (μA)
Type
Rank Min. Max. Iz (mA) Max. Iz (mA) Max. Iz (mA) Max. VR (V)
A 29.68 31.22
B 30.32 31.88
C 30.90 32.50
LLZ 33
D 31.49 33.11
5 65 5 250 0.5 0.2 25
A 32.14 33.79
B 32.79 34.49
C 33.40 35.13
LLZ 36
D 34.01 35.77
5 75 5 250 0.5 0.2 27
A 34.68 36.47
B 35.36 37.19
C 36.00 37.85
LLZ 39
D 36.63 38.52
5 85 5 250 0.5 0.2 30
Dimensions in mm
Glass Case
Mini Melf / SOD-80
JEDEC DO-213 AA
Cathode identification
3.5±0.2
0.3
Φ1.5±0.1
