VRRM = IF = 3300 V 100 A Fast-Diode Die 5SLX 12M3301 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1661-02 Feb. 05 * * * * Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1) Parameter Symbol Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) min Unit VRRM 3300 V IF 100 A 200 A -40 125 C min typ max Unit 2.0 2.3 2.7 V Limited by Tvjmax Tvj Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter 2) Symbol Conditions Continuous forward voltage VF IF = 100 A Continuous reverse current IR VR = 3300 V Peak reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 2) max IFRM Conditions Erec IF = 100 A, VR = 1800 V, di/dt = 550 A/s, L = 1200 nH, Inductive load, Switch: 2x 5SMX12M3300 Tvj = 25 C Tvj = 125 C 2.35 V Tvj = 25 C 5 A Tvj = 125 C 2.5 Tvj = 25 C 115 A Tvj = 125 C 140 A Tvj = 25 C 65 C Tvj = 125 C 110 C Tvj = 25 C 470 ns Tvj = 125 C 800 ns Tvj = 25 C 85 mJ Tvj = 125 C 145 mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 7 mA 5SLX 12M3301 200 250 175 VCC = 1800 V di/dt = 550 A/s Tvj = 125 C L = 1200 nH 25C 200 150 Erec [mJ], Q rr [C], Irr [A] 125C IF [A] 125 100 75 Erec 150 Irr 100 Qrr 50 50 25 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 50 100 VF [V] Fig. 1 150 250 Typical reverse recovery characteristics vs. forward current 200 400 VCC = 1800 V IF = 100 A Tvj = 125 C L = 1200 nH 175 1400 350 150 300 125 250 0 Irr 100 200 Erec 75 -50 150 -700 -100 Qrr [C], Irr [A] 0 Erec [mJ] 700 VR [V] IR [A] Fig. 2 2100 VCC = 1800 V IF = 100 A di/dt = 550 A/s Tvj = 125 C L = 1200 nH 50 Qrr 50 100 25 50 -1400 -150 -2100 0 2 4 6 0 8 Typical diode reverse recovery behaviour 0 0 time [us] Fig. 3 200 IF [A] Typical diode forward characteristics 100 150 200 400 600 800 1000 1200 di/dt [A/s] Fig. 4 Typical reverse recovery vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1661-02 Feb. 05 page 2 of 3 5SLX 12M3301 Mechanical properties Parameter Unit Dimensions Overall die L x W 13.6 x 13.6 mm exposed LxW front metal 10.38 x 10.38 mm 385 15 m 4 m 1.2 m thickness Metallization 3) 3) front (A) AlSi1 back (K) Al / Ti / Ni / Ag For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline Drawing A (Anode) Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1661-02 Feb. 05