5STR 09F1620 5STR 09F1620 Old part no. TP 918F-870-16 Reverse Conducting Thyristor Properties Integrated freewheeling diode Optimized for low dynamic losses Applications * Traction Key Parameters V DRM = 1 600 I TAVm = 814 I TSM = 13 000 V TO = 1.594 r T = 0.145 t q = 20 V A A V m s Types VDRM 5STR 09F1620..1625 5STR 09F1420..1425 1 600 V 1 400 V Conditions: Tj =-40 / 125 C, half sine waveform, f = 50 Hz Mechanical Data Fm Mounting force 22 2 kN m Weight 0.480 kg DS Surface creepage distance 25 mm Da Air strike distance 15 mm Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - TP/096/03 Jul-10 1 of 8 5STR 09F1620 Maximum Ratings - Thyristor VDRM Repetitive peak off-state voltage Maximum Limits Unit 1 600 1 400 V 1 279 A 814 A tp = 10 ms tp = 8.3 ms 13 000 13 900 A tp = 10 ms tp = 8.3 ms 845 000 800 000 A2s 400 A/s 1 000 A/s 5STR 09F1620..1625 5STR 09F1420..1425 Tj = -40 / 125 C ITRMS RMS on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITAVm Average on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITSM Peak non-repetitive surge half sine pulse, VR = 0 V I2t Limiting load integral half sine pulse, VR = 0 V (diT/dt)cr Critical rate of rise of on-state current IT = 2000 A, VD = 0.67VDRM , half sine waveform, f = 50 Hz (dvD/dt)cr Critical rate of rise of off-state voltage VD = 0.67 VDRM PAV Maximum average gate power losses 5 W IGTM Peak gate current 10 A VGTM Peak gate voltage 15 V VRGTM Reverse peak gate voltage 2 V Tjmin - Tjmax Operating temperature range -40 / 125 C Tstgmin Tstgmax Storage temperature range -40 / 125 C Maximum Limits Unit 1 600 1 400 V 430 A 274 A tp = 10 ms tp = 8.3 ms 4 000 4 270 A tp = 10 ms tp = 8.3 ms 80 000 75 800 A2s Unless otherwise specified Tj = 125 C Maximum Ratings - Diode VRRM Repetitive peak reverse voltage 5STR 09F1620..1625 5STR 09F1420..1425 Tj = -40 / 125 C IFRMS RMS forward current Tc = 70 C, half sine waveform, f = 50 Hz IFAVm Average forward current Tc = 70 C, half sine waveform, f = 50 Hz IFSM Peak non-repetitive surge half sine pulse, VR = 0 V I2t Limiting load integral half sine pulse, VR = 0 V Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TP/096/03 Jul-10 2 of 8 5STR 09F1620 Characteristics - Thyristor Value min. VTM typ. Maximum peak on-state voltage Unit max. 1.900 V ITM = 2000 A VT0 Threshold voltage 1.594 V rT Slope resistance 0.145 m 100 mA 1 s 4 s 5STR 09F1620 5STR 09F1420 20 s 5STR 09F1625 5STR 09F1425 25 IT1 = 1367 A, IT2 = 4100 A IDM Peak off-state current VD = VDRM tgd Delay time Tj = 25 C, VD = 100 V, ITM = ITAVm, tr = 0.5 s, IGT = 2 A tgt Switch-on time the same conditions as at tgd tq Turn-off time IT = ITAVm, diT/dt = -50 A/s, VD = 0.67 VDRM, dvD/dt = 50 V/s group of tq IH Holding current Tj = 25 C Tj = 125 C 200 mA IL Latching current Tj = 25 C Tj = 125 C 250 mA VGT Gate trigger voltage Tj = - 40 C Tj = +25 C Tj = +125 C 3.5 Tj = - 40 C Tj = +25 C Tj = +125 C 600 350 250 VD = 12V, IT = 4 A IGT Gate trigger current VD = 12V, IT = 4 A V 10 mA Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TP/096/03 Jul-10 3 of 8 5STR 09F1620 Characteristics - Diode Value min. VFM typ. Maximum forward voltage Unit max. 2.390 V 1.006 V 1.123 m IFM = 1250 A VT0 Threshold voltage IF1 = 360 A, IF2 = 1084 A rT Forward slope resistance Qrr Reverse recovery charge C 200 IFM = 320 A, di/dt = -50 A/s, VD = 100 V IrrM Maximum reverse recovery current A the same conditions as at Qrr trr Reverse recovery time s 4.8 the same conditions as at Qrr Unless otherwise specified Tj = 125 C Thermal Parameters - Thyristor Rthjc Thermal resistance junction to case Value Unit 30 K/kW double side cooling Rthch anode side cooling 57 cathode side cooling 64 Thermal resistance case to heatsink 10 K/kW double side cooling single side cooling Thermal Parameters - Diode Rthjc Thermal resistance junction to case 20 Value Unit 100 K/kW double side cooling anode side cooling 140 cathode side cooling 370 ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TP/096/03 Jul-10 4 of 8 5STR 09F1620 Transient Thermal Impedance - Thyristor Correction for periodic waveforms - Thyristor 180 sine: add 5.8 K/kW i 1 2 3 4 5 i ( s ) 0.3289 0.1375 0.0343 0.0037 0.0003 Ri( K/kW ) 9.02 11.50 6.02 3.06 0.39 180 rectangular: add 4.5 K/kW 60 rectangular: add 13.1 K/kW Analytical function for transient thermal impedance 5 Z thjc = Ri (1 - exp( -t / i )) i =1 35 Transient thermal impedance junction to case Zthjc ( K/kW ) 120 rectangular: add 7.6 K/kW 30 25 20 15 10 5 0 0,001 Conditions: Fm = 10 2 kN, Double side cooled 0,01 0,1 1 10 Square w ave pulse duration t d ( s ) Fig. 2 Dependence transient thermal impedance junction to case on square pulse - Thyristor Diode Correction for periodic waveforms - Diode 180 sine: add 13.6 K/kW i 1 2 3 4 5 i ( s ) 0.3819 0.1733 0.0171 0.0046 0.0003 Ri( K/kW ) 62.39 23.99 4.05 7.85 1.73 180 rectangular: add 10.7 K/kW 60 rectangular: add 32.4 K/kW 120 Transient thermal impedance junction to case Zthjc ( K/kW ) 120 rectangular: add 18.1 K/kW 100 80 60 40 20 0 0,001 0,01 0,1 1 10 Square w ave pulse duration t d ( s ) Fig. 3 Dependence transient thermal impedance junction to case on square pulse - Diode ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TP/096/03 Jul-10 5 of 8 T j = 25C 125C 6000 21 1,2 19 1 5000 17 4000 15 3000 13 i 2dt (106 A2s) 7000 ITSM ( kA ) IT ( A ) 5STR 09F1620 0,8 0,6 2 i dt 2000 11 0,4 1000 9 I TSM 0 7 0 1 2 V T (V) 3 Fig. 4 Maximum on-state characteristics 1 10 t ( ms ) 0,2 100 Fig. 5 Surge on-state current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax 100 % 100 tgd ( s ) 90 80 70 10 60 50 max. 40 1 average 30 min. 20 10 0,1 0,1 1 10 I FGM ( A ) Fig. 6 Delay time vs. forward gate current, Tj = 25 C, VD = 100 V, ITM = ITAVm, tr 0.5 s, tp =1 ms 100 20 40 60 80 100 120 140 T j ( C ) Fig. 7 Relative value of turn-off time vs. junction temperature ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TP/096/03 Jul-10 6 of 8 2000 = 30 60 90 120 180 2000 PT ( W ) PT ( W ) 5STR 09F1620 = 30 DC 1600 1600 1200 1200 800 800 400 400 0 60 90 120 180 270 DC 0 0 200 400 600 800 1000 0 200 400 600 800 I TAV ( A ) 130 Fig. 9 On-state power loss vs. average on-state current, square waveform, f = 50 Hz, T = 1/f 130 TC ( C ) TC ( C ) Fig. 8 On-state power loss vs. average on-state current, sine waveform, f = 50 Hz, T = 1/f 1000 I TAV ( A ) 120 120 110 110 100 100 90 90 80 80 DC 70 DC 70 270 = 30 60 60 90 120 180 = 30 60 0 200 400 600 800 1000 0 200 60 90 400 600 I TAV ( A ) Fig. 10 Max. case temperature vs. aver. on-state current, sine waveform, f = 50 Hz, T = 1/f 120 180 800 1000 I TAV ( A ) Fig. 11 Max. case temperature vs. aver. on-state current, square waveform, f = 50 Hz, T = 1/f ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TP/096/03 Jul-10 7 of 8 T j = 25C 125C 2500 0,12 6,5 I FSM 6 0,1 5,5 2000 i 2dt (106 A2s) 3000 IFSM ( kA ) IF ( A ) 5STR 09F1620 5 0,08 4,5 1500 4 0,06 1000 2 i dt 3,5 3 0,04 500 2,5 0 2 0 1 2 Fig. 12 Maximum forward voltage drop characteristics of the diode 3 VF (V) 4 1 10 t ( ms ) 0,02 100 Fig. 13 Surge on-state current vs. pulse length of the diode. Half sine wave, single pulse, VR = 0 V, Tj = Tjmax Notes: ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TP/096/03 Jul-10 8 of 8