Schottky Detector Diodes V 2.00 Features Case Styles (See appendix for complete dimen- @ Wide Selection of Packages for Stripline, Coaxial and sions) Waveguide Detectors @ Chip Diodes Available 7 7 A Both P and N Type Diodes 54 Excellent Sensitivity Through Ka-Band Low 1/F Noise Description This family of low capacitance Schottky diodes is designed to give superior performance in video detectors and power monitors from 100 MHz through 40 GHz. They have low junction capacitance and repeatable video impedance. These diodes are available in a wide range of ceramic, stripline and axial lead packages and as bond- able chips. Both P and N type diodes are offered. 3 119 120 Applications Detectors and power monitors in stripline, coaxial and waveguide circuits through 40 GHz. 186 213 | , /} 276 Specifications Subject to Change Without Notice. M/A-COM, Inc. 5-59 _North America: Tel. (800) 366-2266 a Asia/Pacific: Tel. +81 (03) 3226-1671 = Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (08) 3226-1451 Fax +44 (1344) 300 020Schottky Detector Diodes V 2.00 Maximum Ratings Temperature Ratings Storage Operating Temperature -65C to +150C (Case styles 54, 119, 120, 135, 135A, 186, 276) -65C to +125C (Case styles 137, 213) Power Ratings at 25C Maximum Peak Incident RF Power S-X Band 1 Watt-1 microsecond maximum pulse length Ku-K Band 0.5W-1 microsecond maximum pulse length Maximum CW RF Power S-X Band 150 mW (maximum) Derate Linearly to Zero at 150C Ku-K band 100 mW (maximum) Solder Temperature Ratings For case styles 54, 119, 186, 276 230C for 5 seconds, 1 mm from package For case style 120 200C for 5 seconds For case style 137 and 213 150C for 5 seconds, 1 mm from package Packaged N Type Silicon Schottky Detector Diodes These low barrier packaged detector diodes are suitable for use in stripline, waveguide and coaxial detectors. They feature high sensitiv- ity and low I/f noise. These diodes are listed by increasing test frequency, grouped by packaged style and decreasing Tss. Other case styles than those specified may be available. Specifications @ Ta = +25C Maximum2.3 Video Iimpedence** Tang. Signal Range Model! Test Frequency Sensitivity Ts, Min/Max. Number Case Style (GHz) (dBm) (k Ohms) MA40053 54 3 - 55 1/2 MA40064 119 3 - 55 1/2 MA40202 54 10 - 55 1/2 MA40201 119 10 - 55 1/2 MA40207 120 10 - 55 1/2 MA40205 119 16 - 52 1/2 MA40215 120 16 - 2 1/2 MA40268 120 36 - 49 12 Notes: 1. Schottky barrier junction diodes are thermocompression bonded in 2. The video amplifier bandwidth is 1 MHz and the nominal amplifier case style 119 and 120. Case style 54 uses pressure contacts. noise figure is 3 dB. DC impedance is 10 k Ohms. The DC bias is 20 The standard case style is given for each model number. Other case pA. styles may be available. 3. RF Power = 30 dBM. The dc forward bias is + 20 pA. 4. Measured at the indicated test frequency and at -30 dBm RF power Specifications Subject to Change Without Notice. 5-60 M/A-COM, Inc. North America: Tel. (800) 366-2266 a Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020Schottky Detector Diodes N Type Silicon Schottky Detector Diodes These low barrier packaged detector diodes are suitable for use in striping applications. They feature high sensi- tivity, and low \/f noise. These diodes are listed by increasing frequency, and grouped by package style and Tss. Case styles other than those specified may be avail- able. For additional information, contact the factory. V 2.00 Minimum Video Impedence* Tang. Signal Range Test Frequency Sensitivity Ts Min/Max. Model Number Case Style (GHz) (dBm) (K Ohms) MA40261 186 3 - 55 1/2 MA40143 213 3 - 50 1/2 MA40108 137 10 - 52 1/2 MA40070 137 10 - 50 1/2 MA40264 186 10 - 55 1/2 MA40147 213 10 - 55 1/2 MA40207-276 276 10 - 55 1/2 MA40215-276 276 16 - 52 1/2 Packaged P Type Silicon Schottky Detector Diodes This series of low barrier P type detector diodes has good voltage sensitivity and lower 1/f noise than similar capacitance N type Schottky diodes. They are listed by case style. Specifications @ T, = +25C Minimum! Video Impedance2 Tang. Sig. Range Minimum? Test Frequency Sens. Tsg Min/Max. Sensitivity Model Number Case Style (GHz) (dBm) (Ohms) (mV/mW) MA40252 54 10 - 55 1.2/1.8 000 MA40251 119 10 - 55 1.2/1.8 5000 MA40257 120 10 - 55 1.2/1.8 5000 MA40257-276 276 10 ~5 1.2/1.8 5000 Notes: 1. The-video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. The input impedance is 10 k Ohms and DC bias is 20 pA. 2. Pinc = -30 dBM. The DC forward bias is +20 pA. Specifications Subject to Change Without Notice. M/A-COM, Inc. _North America: Tel. (800) 366-2266 Fax (800) 618-8883 = Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 5-61 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020Schottky Detector Diodes V 2.00 N Type Silicon Schottky Chip Detector Diodes These low barrier N type chip detector diodes are suitable for use in microstrip applications. They feature sensitivity, and low I/f noise. These diodes are listed by increasing frequency. Minimum Nominal? Nominai* Test Nominal !:5 Reverse Forward Total Model Case Frequency Tss Voltage Vz Voltage Capacitance Number Style (GHz) (dBM) (Voits) (Volts) (pF) MA40220 135 10.0 - 52 2.0 0.3 0.12 MA40222 135 16.0 - 52 2.0 0.3 0.09 P Type Silicon Schottky Chip Detector Diodes These low barrier P type chip detector diodes are suitable for use in microstrip or stripline circuits. These diodes are listed by increasing test frequency. Specifications @ Ta = 25C Minimum2 Nominal? Nominai* Test Reverse Nominal?.5 Forward Total Model Case Frequency Voltage Vp, Ts5 Voltage Capacitance Number Style (GHz) (Volts) (dBM) (Volts) (pF) MA40270 135A 10.0 4.0 ~52 0.4 0.12 MA40272 135A 16.0 4.0 -52 0.4 0.09 Notes: 1. The video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. Impedance is 10 k Ohms and DC bias is +20 A. Wafers are evaluated - on a sample basis for Ts. 2. Voltage rating is measured at 10 pA reverse bias current. 3. Forward voltage is measured at a forward current of 1 mA. 4. Capacitance is measured at 0 V and 1 MHz. 5. RF power = -30 dBm. The DC forward bias is +20 pA. Measured at the indicated test frequency and at -30 dBm RF power with R, = 10 k Ohms and DC forward bias +20 yA. Specifications Subject to Change Without Notice. 5-62 M/A-COM, Inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 mw Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020Schottky Detector Diodes V 2.00 Typical Performance Curves NOMINAL OUTPUT VOLTAGE AT X-BAND NOMINAL OUTPUT VOLTAGE AT X-BAND (WITH FORWARD BIAS) (WITH ZERO BIAS) 3 10,000 > $1 z i w w < g ah e of - 3 > > rE - 2 > a x = 5 5 1 ' q = 9.378 FREQ. = 9.375 GH: =20 uA S 1 0 HA HOLDER = JD2078 HOLDER = JD2078 (502 7MM AIR LINE) (802. 7MM AIR LINE) 0.1 1 NO 50~45 40 -35 -30 -25 -20--15 -10 5 40-35 30 -25 -20-15 -10 -5 0 5 10 INPUT POWER (dBm) INPUT POWER (dBm) NOMINAL TANGENTIAL SIGNAL SENSITIVITY vs FREQUENCY . 80 & NL > 55} > 55) & BW = 2 MH > IN ip@ 20 uA * - a 750 a N NS < -45} z Q a <7 - 2 o _ssl Zz q rd 30 4 6 8 10 (12 4 =6160=18 20 FREQUENCY (GHz) NOMINAL TANGENTIAL SIGNAL | INAL VIDEO IMPEDANCE vs BIAS CURRENT SENSITIVITY vs BIAS CURRENT AT X-BAND NOMIN CE vs & 3 > -58 < ~ 5 g ~66 & 8 < K z a : 2 - (Z.=60 = = > 9 z < ia 0 10 20 30 40 50 60 70 80 90 100 10 100 1000 BIAS CURRENT (xA) BIAS CURRENT (nA) Specifications Subject to Change Without Notice. M/A-COM, Inc. 5-63 North America: Tel. (800) 366-2266 a Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020