CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS SOT-923 CASE FEATURES * Very Small Package Size * 200mA Collector Current * Low VCE(SAT) (0.1V Typ @ 50mA) * Miniature 0.8 x 0.6 x 0.4mm Ultra Low height profile FEMTOminiTM Surface Mount Package MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBT3904E (NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged in the FEMTOminiTM SOT-923 package, these transistors provide performance characteristics suitable for the most demanding size constrained applications. MARKING CODES: CMBT3904E: B CMBT3906E: G APPLICATIONS * DC / DC Converters * Voltage Clamping * Protection Circuits * Battery powered applications including: Cell Phones, Digital Cameras, Pagers, PDAs, Laptop Computers, etc. SYMBOL UNITS VCBO 60 V VCEO 40 V VEBO 6.0 V Collector Current IC 200 mA Power Dissipation Operating and Storage Junction Temperature PD 100 mW TJ, Tstg -65 to +150 C JA 1250 C/W Collector-Emitter Voltage Emitter-Base Voltage Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) NPN SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=30V, VEB=3.0V BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) MAX 50 UNITS nA IC=10A IC=1.0mA 60 40 IE=10A IC=10mA, IB=1.0mA 6.0 0.057 0.050 0.100 V 0.100 0.100 0.200 V 0.750 0.750 0.850 V 0.850 0.850 0.950 V VBE(SAT) IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA 0.650 115 PNP TYP 90 V 60 55 V 7.5 7.9 V Enhanced specification. R0 (17-April 2007) Central CMBT3904E NPN CMBT3906E PNP TM ENHANCED SPECIFICATION COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS Semiconductor Corp. ELECTRICAL CHARACTERISTICS (continued) SYMBOL TEST CONDITIONS MIN NPN TYP PNP TYP 90 240 130 hFE hFE VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA 100 235 150 hFE VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA 100 215 150 70 110 120 hFE VCE=1.0V, IC=100mA VCE=20V, IC=10mA, f=100MHz 30 50 55 hFE fT Cob Cib hie hre hfe hoe MAX UNITS 300 300 MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz 4.0 8.0 pF 12 k X10-4 VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz 1.0 0.1 10 VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz 100 400 60 mhos NF VCE=5.0V, IC=100A, RS =1.0k, f=10Hz to 15.7kHz 4.0 dB td tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 35 ns 35 ns 200 ns VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 50 ns ts tf 1.0 pF Enhanced specification. SOT-923 - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R0 (17-April 2007)