HA13705 - Hitachi Semiconductor

HA13705C

IPIC (Intelligent Power IC) High Side Solenoid Driver

ADE-207-207 (Z)

1st Edition

July 1996

Description

The HA13705C is high side power driver IC with protectors and diagnostic function. The device is especially

designed to switch inductive loads.

Functions

• Power MOS source follower output (2 A)

• With Over Voltage Shut Down circuit (OVSD)

• With Over Current protector circuit (OCSD)

• With Over Temperature Shut Down circuit (OTSD)

• With diagnostic circuit and status output

• With fail safe function under input open circuit condition

• With low voltage inhibit circuit (LVI)

• With output negative voltage clamp circuit

Features

• Protected against 60 V load dump condition

• Low RON (0.17 Ω Typ)

• Wide operating supply voltage range (VDD = 7 V to 25 V)

• High sustaining voltage (–25 V)

• Protected against reverse supply voltage (–13 V)

• Protected against short circuit condition

• Input compatible with TTL, LS-TTL, or 5 V CMOS

HA13705C

Pin Arrangement

GND OUT

STATUSINPUT

HA13705C

(Top View)

VDD

12345

HA13705C

Block Diagram

OVSD Charge

Pump Voltage

Clamp

VDD

OSC. Latch

OUT

STATUS

INPUT

Band

Gap

Ref.

TSD

GND

Open, Short to

VDD Detector

Vref

160

175

Current

Sense

Diagnostic

Logic

LVI

—

HA13705C

Truth Table

Mode In Out Status

Normal L L L

HHH

Load short L L L

HL L

Load open L H H

HHH

Short to VDD LHH

HHH

OTSD *1 LLL

HL L

OVSD *2 LLH

HL H

LVI *3 LLH

HL H

L : Low level (0.8 V)

H : High level (2.0 V)

Notes: 1. OTSD: Over temperature shut down

2. OVSD: Over voltage shut down

3. LVI: Low voltage inhhibit

HA13705C

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit Notes

Continuous supply voltage VDD –13 to 35 V 1

Transient supply voltage VDD 60 V 2

Input voltage VIN –0.3 to 30 V

Output voltage Vout –25 to VDD V3

Status voltage Vs –0.3 to +15 V

Output current Iout — A 3, 4

Status current Is 5 mA

Power dissipation PT—W5

Package thermal resistance/

Junction to case θj–c 5 °C/W

Package thermal resistance/

Junction to air θj–a 70 °C/W

Junction temperature range Tj –40 to 150 °C

Storage temperature range Tstg –55 to +150 °C

Notes: 1. Recommended operating voltage:

VDD = 7 to 16 V (Normal)

16 to 25 V (Jump up start 5 minutes MAX)

–13 V (Reverse Battely 5 minutes MAX)

2. Load dump condition

60 V

14 V

V = 14 + 46 e t

0.25

—

Tr = 1ms

HA13705C

3. Output Transistor ASO (Reference Data)

0.5

0.12 5 10 20

30405060

VDS

(

)

(A)

1ms

10ms

Limited area

by over current

protection

4. Internally limited

5. Maximum power dissipation (PT (Max)) can be defined as:

PT (Max) = (Tjopr(Max) – Tambient) / (θj-c + θc-a)

θc-a: Thermal resistance between case and air (Depend on heat sink size)

HA13705C

Electrical Characteristics (Ta = 25°C, VCC = 12 V ±10%)

Item Symbol Min Typ Max Unit Test Conditions Pin Note

Output R (ON) RDS(ON) — 0.17 0.36 ΩI

= 2 A

(@Tj = –40 to 150°C) 5

Operating supply

voltage range VDD 7—25V 3

Quiescent current IDD1 — — 0.3 mA VIN = 0 V, Vout = 0 V 3

IDD2 — 6.0 10.0 mA VIN = 5.5 V, Vout = open 3

Output leakage current ILEAK — — 0.1 mA VDD = 25 V, VIN = 0 V,

Vout = 0 V 5

Input threshold voltage VIL — — 0.8 V 2

VIH 2.0 — — V 2

Input current IIL –10 — 60 µAV

IN = 0.8 V 2

IIH 50 — 300 µAV

IN = 5.0 V 2

Propagation delay time td(ON) ——50µsI

O = 1 A 2, 5

tr——90µs5

td(OFF) ——50µs 2, 5

Tf ——50µs5

Open det. threshold

current IOD 2 10 100 µs 4, 5

Current limiter operating

level ICS 3.0 4.3 7.5 A 5

LVI operating level L.V.I — 5 6 V 3

Over

voltage

shut

down

Operating

level OVSD 26 29 33 V 3

Hysteresis VHYS 0.15 0.5 1.5 V 3

Output sustain voltage V(SUS) — — –25 V Iout = 20 mA 5

Over

temper-

ature

shut

down

Operating

level OTSD 150 175 — °C51

Hysteresis THYS — 15 — °C51

Status on voltage VSL — — 0.4 V IS = 1 mA 4

Status leakage current IS(Leak) –10 — 100 µAV

S = 5.0 V 4

Notes: 1. Design parameter only (no test)

HA13705C

Solenoid Drive Application and it’s Waveform

HA13705C

INPUT OUTPUT

STATUS

GND

VDD

INPUT 5 V

Normal Output short

to GND

Iout

Vout

ICS

VDD

V (SUS)

STATUS VCC

VCC (5 V)

1.8 ms (Typ)

C1 R2

DZ1

R1 : Input series resistance to protect CMOS driver.

R2 : Pull up resistance at status output.

C1 : The capacitor to compensate the inductance at VDD line.

D1, DZ1 : for Reverse voltage clamp

HA13705C

Package Dimensions

1.7

3.4

17.0 ± 0.3

15.2 ± 0.3

12.0 ± 0.3

8.45 0.6

4.3

8.2

20.6

21.9

2.79 ± 0.15

2.5 ± 0.2

2.1 ± 0.2

3.2 ± 0.2

10.0 ± 0.3

2.5 ± 0.2

4.44 ± 0.20

7.0 ± 0.3

Hitachi Code

JEDEC

EIAJ

Weight

(reference value)

SP-5TA

—

2.0 g

1 Max

0.5 Max

Unit: mm

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

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