1$S$83 Silicon Epitaxial Planar Diode for High Voitage Switching Features High reverse voltage. (Vp=250V) * High reliability with glass seal. Outline EeSjef t \\ hard band 2nd band Ordering Information Cathode band 1. Cathode Type No. Cathode band 2nd band 3rdband Package Code 2. Anode 18$S83 Verdure Light Blue Light Blue DO-35 Absolute Maximum Ratings ** (Ta = 25C) Item Symbol! Value Unit Peak reverse voltage Vam* 300 Vv Reverse voitage Va 250 V Peak forward current len 625 mA Non-Repetitive peak forward surge current lesu* 1 A Average forward current 1, 200 mA Power dissipation Pg 400 mW Junction temperature qT; 175 _e Storage temperature T stg -65 to +175 C * Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. ** Within 1s forward surge current. Electrical Characteristics (Ta = 25C) ltem Symbol Min Typ Max Unit Test Condition Forward voltage Ve _ _ 1.0 V lp = 100 mA Reverse current las 02 pA Va= 250V Ine _ _ 100 Va = 300 V Capacitance Cc _ 1.5 _ pF Vy =0V,f=1 MHz Reverse recovery time t, _ _ 100 ns le=lQ=30mA, lir=3MA,R, =100Q 971SS83 (A) Forward current Ip Capacitance C (pF) 10 10 10 10 0 02 O04 O06 QO8 4.0 Forward voitage Ve (V) Fig.1 Forward current Vs. Forward voltage f=1MHz 10 1.0 10. 1.0 10 Reverse voltage Va (V) Fig.3 Capacitance Vs. Reverse voltage 1.2 10 Reverse current Ip (A) Ta=75C 50 100 150 200 250 300 Reverse voltage Vp (V) Fig.2 Reverse current Vs. Reverse voltage 98