MMBTAS55/56LT1 TRANSISTOR (PNP) 1.BASE 2.EMITTER 3.COLLECTOR FEATURES 7 Pom: 0.225 W (Tamb=25C ) Collector current lem: -0.5A en 2A iq 1:3 ~~ oo : i Pe a Spats ee Ts,Tstg :-55'C to+150C oO! j a ; st Gi _ ~~ Ht tc OL . UNIT: mm ELECTRICAL CHARACTERISTICS (Tamp=25C_ unless otherwise specified) Drain-source Breakdown Voltage V(BR)CBO Ic=-100 1 A, le=0 Collector Emitter Breakdown Voitage ViBR)CEO ic=-1mA,lB=0 Vv Emitter-base Breakdown Voltage V(BR)EBO ie=-100n A,Ic=0 ~4 Coll Cut-off C Vcs=-60V le=0 -0.1 LA ollector Cut-o urrent IcBo Vce=-80V le=0 -0.1 Colt Cut-off Current Ic Vce=-S0V,IB=0 0.4 A olfector Cut-o urren EO VcE=-60V,IB=0 . -0.1 u hFeE(1) Vce=-1V,Ic=-10mA 100 DC Current Gain hFE(2) Vce=-1V,Ic=-100mMA 100 Collector-emitter Saturation Voltage VcEsat ic=-100mA,t8=-10MA -0.25 Vv Bsse -emitter Voltage VBE Vce=-1V,Ic=-100mA -1.2 Vv Transition Frequency ft Pome mA 50 MHz DEVICE MARKING : MMBTASSLT1:2H MMBTASELT1:2G 200