A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 50 mA 35 V
BVCERIC = 50 mA RBE = 10 Ω60 V
BVEBO IE = 10 mA 4.0 V
ICES VE = 28 V 5mA
hFE VCE = 5.0 V IC = 1.0 A 10 100 ---
Cob VCB = 28 V f = 1.0 MHz 80 pF
GPE
IMD3
VCE = 25 V ICQ = 3.2 A f = 225 MHz
PREF = 16 W Vision = -8 dB Snd. = -7 dB
Side Band = -16 dB
13.5 14.5
-55
dB
dBc
NPN SILICON RF POWER TRANSISTOR
HF75-28F
DESCRIPTION:
The ASI HF75-28F is Designed for
FEATURES:
• PG = 18 dB min. at 75 W/30 MHz
• IMD3 = -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC10 A
VCB 60 V
VCE 35 V
PDISS 140 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 1.05 OC/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10606
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
E
E
C
B
