1
Edition 1.3
July 2004
FLD5F20NP-C
Parameter Symbol
Storage Temperature Tstg +85- °C
-40
Operating Case Temperature +70- °C
Top -20
Optical Output Power 5CW mW
Pf-
Laser Forward Current 150CW mA
IF-
Laser Reverse Voltage 2CW V
VR-
Modulator Forward Voltage +1CW V
Vm-5
Photodiode Forward Current 1-mA--
10-V
Photodiode Reverse Voltage VDR -
10260°C sec
Lead Soldering Time --
TEC Voltage +2.5Cooling
-Heating V
Vc-
-2.5
TEC Current +1.4Cooling
-Heating
A
Ic-
-0.9
Thermistor Temperature +70-20ATC Operation °CTth
Rating
Unit
Min. Max.
ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified)
Condition
1,550nm Modulator
Integrated DFB Laser
FEATURES
• Modulator Integrated DFB Laser Diode Module
• CW operation of DFB laser section
• Modulation voltage applied only to modulator section
• High speed butterfly package with GPO connection
• Built-in optical isolator, monitor photodiode, thermistor, and
thermo-electric cooler
APPLICATION
This MI DFB laser is intended for long reach applications (≤80km)
at 10Gb/s.
DESCRIPTION
The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator
monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation
voltage is applied to the modulator section while the laser section operates CW allowing extremely low
wavelength chirping. Extinction ratios of more than 10 dB can be achieved with 2.6 Vp-p modulation.
The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical
coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a
thermo-electric cooler.
2
FLD5F20NP-C 1,550nm Modulator
Integrated DFB Laser
Parameter Symbol Unit
Limits
Max.Type
Min.
Test Condition
Note (1)
Peak Wavelength Wpnm
1565-1530
Forward Voltage VFV- 2.01.4
CW, IF=Iop
Optical Isolation IsdB-25 35Tc=-20 to +70°C
Threshold Current Ith mA-30-
CW, Vm=Vo
Threshold Power Pth µW-75-
CW, IF=Ith, Vm=Vo
Output Power PfdBm-1.0 --
Note (1)
Tracking Error TE dB-0.5 +0.5-
CW, IF=Iop, Vm=Vo, Im-APC,
Tc=-20 to 70°C
Spectral Width ∆λp
- 0.04-
nm
- 0.30-
10Gb/s, NRZ, PRBS=223-1,
IF=Iop, Vm=Vo & (Vo-Vmod),
-3dB, FWHM
10Gb/s, NRZ, PRBS=223-1,
IF=Iop, Vm=Vo & (Vo-Vmod),
-20dB, FWHM
On Level Modulation VoV-0.7 0--
Modulator Drive Voltage Vmod Vpp- 2.6-
(Vo-Vmod)-3.3V,
Rext=10dB
Relative Intensity Noise RIN dB/Hz- -120-
f=10MHz to 8.5GHz,
Vm=Vo, IF=Iop, 8% Reflection
Operating Current Iop mA40 100--
Sidemode Suppression Ratio SSR dB-35 -Note (1)
Kink K-No Kink
Ith +5mA to 1.5 x Iop
Mode Hops --No Mode HopsIth +5mA to 1.5 x Iop
OPTICAL & ELECTRICAL CHARACTERISTICS (TL= 25°C, Top = 25°C, & BOL, unless otherwise specified)
3
FLD5F20NP-C
1,550nm Modulator
Integrated DFB Laser
Parameter Symbol
OPTICAL & ELECTRICAL CHARACTERISTICS (TL= 25°C, Top = 25°C, & BOL, unless otherwise specified)
Note (1) Eudyna Test System, 9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod)
Note (2) Eudyna Test System, 9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod)
Dispersion=1600ps/nm, Dispersion Penalty at Bit-Error-Rate=1.0E-10
Unit
Limits
Max.Type
Min.
Test Condition
Cut-off Frequency S21 GHz10 - -
-3dB, IF=Iop,Vm=Vo-0.5|Vmod|
TEC Power Dissipation PTEC W2.4--
IF=Iop
TEC Capacity ∆T°C-45 -
PTEC=2.4W, IF=Iop
TEC Current ITEC A1.0--
IF=Iop, ∆T=45°C
TEC Voltage VTEC V2.4--
IF=Iop, ∆T=45°C
TL=25°C
Thermal Resistance Rth kΩ
10.59.5 -
Thermistor B Constant BK36303270 3450
In-Band Ripple ∆GdB
-1.0 +1.0
-
IF=Iop, 0.1 to 10GHz,
Vm=Vo-0.5|Vmod|
RF Return Loss S11
dB
8- -
dB
5- -
DC to 5GHz, Vm=Vo, IF=Iop,
50Ω Test Set
5 to 10GHz, Vm=Vo, IF=Iop,
50Ω Test Set
Monitor Current ImmA0.04 1.5-Note (1), VDR=5V
Monitor Dark Current IdnA- 1002VDR=5V
Monitor Diode Capacitance CtpF-152VDR=5V, f=10MHz
Transmission Penalty due
to Dispersion PddB-
-
2.0-Note (2)
RF Extinction Ratio Rext dB--10
IF=Iop, Vm=Vo at On-Level,
Vm=Vo-Vmod at Off-Level
Rise/Fall Time Tr, Tfps25-20
IF=Iop, Vm=Vo, 20% to 80%
4
FLD5F20NP-C 1,550nm Modulator
Integrated DFB Laser
10 Gb/s
PRBS=223-1
IF=Iop
Vm=Vo/(Vo-2)
Vo=-0.5V
TLD=25°CPf
Im
Fig. 1 Lasing Spectrum
Wavelength (Span=1 nm/div, Res.=0.1nm)
Fig. 2 Output Power & Monitor Current
vs. Forward Current
Forward Current, IF (mA)
Output Power, Pf (mW)
Monitor Current, Im (mA)
3
4
2
1
20 40 60 80 100
0
0
0.25
0.5
0.75
1
0
Relative Intensity (10 dB/div.)
5
FLD5F20NP-C
Fig. 3 Extinction Ratio vs.
Modulation Applied Voltage
Fig. 4 Cut-off Frequency (S21)
Frequency, f (GHz)
Modulation Applied Voltage (V)
Extinction Ratio (dB)
Relative Output (dB)
-10
-5
0
-15
-20
0.5 1.0 1.5 2.0 2.50
51015200
-12
-9
-6
-3
0
3
6
9
12
Fig. 5 RF Return Loss (S11)
Frequency, f (GHz)
Return Loss (dB)
51015200
-30
-20
-10
0
Fig. 6 Transmission Characteristics
TLD=25°C,
ILD=70mA, Vo=-0.5V,
Vpp=2.0V,
9.95328Gb/s,
PRBS=223-1,
Power penalty=+1.0dB
(@BER=10-10),
Dispersion=1600 ps/nm
Back to Back
After 1600 ps/nm
Received Optical Power (dBm)
Bit Error Rate
10-12
10-10
10-11
10-8
10-9
10-6
10-5
10-7
10-4
-23 -22 -17 -16-18-19-20-21
1,550nm Modulator
Integrated DFB Laser
6
*L
25.0±0.5
29.97±0.25
5.08±0.25
17.24±0.25
15.24±0.25
2.54±0.20 7-0.5
PIN 1
4-ø2.67±0.2
PIN 7 8.17±0.25
5.41±0.25
7-0.15±0.05
26.04±0.25
20.83±0.25
ø4.16
10.0±0.25
1.25
12.7±0.25
8.25±0.20
ø0.9±0.1
ø5.2±0.25
8.89±0.15
# PIN DESIGNATIONS
1 Thermistor
2 Thermistor
3 LD Anode
4 Power Monitor Anode
5 Power Monitor Cathode
6 Thermoelectirc Cooler (+)
7 Thermoelectric Cooler (-)
8 Modulator Anode (-)
22.00±0.25
PIN 8
* Pigtail length (L) and connector type are
specified in the detail (individual) specification.
Case Ground: LD Cathode
4.83±0.20
0.5±0.2
5.47±0.2
CONNECTOR
TOP VIEW
TEC TH
10KΩ
50Ω
76
8
54321
“NP” PACKAGE UNIT: mm
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
FLD5F20NP-C 1,550nm Modulator
Integrated DFB Laser
