2011-08-19
1
SMBT2222A/MMBT2222A
1
2
3
NPN Silicon Switching Transistor
Low collector-emitter saturation voltage
Complementary type:
SMBT2907A / MMBT2907A (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBT2222A/MMBT2222A s1P 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V
Collector-base voltage VCBO 75
Emitter-base voltage VEBO 6
Collector current IC600 mA
Total power dissipation-
TS 77 °C
Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 220 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-08-19
2
SMBT2222A/MMBT2222A
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 40 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 75 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6 - -
Collector-base cutoff current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.01
10
µA
Emitter-base cutoff current
VEB = 3 V, IC = 0
IEBO - - 10 nA
DC current gain1)
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 1 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
35
50
75
50
100
40
-
-
-
-
-
-
-
-
-
-
300
-
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
-
-
-
0.3
1
V
Base emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
0.6
-
-
-
1.2
2
1Pulse test: t < 300µs; D < 2%
2011-08-19
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SMBT2222A/MMBT2222A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz
fT300 - - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 2.5 5 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - - 35
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h11e
2
0.25
-
-
8
1.25
k
Open-circuit reverse voltage transf. ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h12e
-
-
-
-
8
4
10-4
Short-circuit forward current transf. ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h21e
50
75
-
-
300
375
-
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
IC = 10 mA, VCE = 10 V, f = 1 kHz
h22e
5
25
-
-
35
200
µS
Delay time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
td- - 10 ns
Rise time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
tr- - 25
Storage time
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA
tstg - - 225
Fall time
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA
tf- - 60
Noise figure
IC = 100 µA, VCE = 10 V, f = 1 kHz,
f = 200 Hz, RS = 1 k
F- - 4 dB
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SMBT2222A/MMBT2222A
Test circuit
Delay and rise time
EHN00055
200 Osc.
619
30
9.9
00.5
V
V
V
Storage and fall time
EHN00056
200 Osc.
1
30
16.2
0
-13.8
-3.0
µ500~s
s~100
µ
< 5 ns
V
V
V
Vk
Oscillograph: R > 100, C < 12pF, tr < 5ns
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SMBT2222A/MMBT2222A
DC current gain hFE = ƒ(IC)
VCE = 10 V
EHP00743SMBT 2222/A
10
10 mA
h
C
10
5
FE
10
3
2
10
1
5
10 10 10
-1 0 1 2 3
Ι
-50 ˚C
25 ˚C
150 ˚C
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
EHP00742SMBT 2222/A
10
0V
BE sat
mA
10
3
1
10-1
5
100
5
V
0.2 0.4 0.6 0.8 1.0 1.2
CE sat
V,
5
102VBE
VCE
Ι
C
Transition frequency fT = ƒ(IC)
VCE = 20 V
EHP00741SMBT 2222/A
10
10 10 mA
f
C
10
MHz
10
T
555
Ι
0123
10
3
2
10
1
5
2
2
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 5 10 15 V25
VCB(VEB
0
5
10
15
20
25
pF
35
CCB(CEB)
CCB
CEB
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SMBT2222A/MMBT2222A
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00740SMBT 2222/A
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
PDC
P
p
t
Delay time td = ƒ(IC)
Rise time tr = ƒ(IC)
EHP00744SMBT 2222/A
10
ns
10 10 mA
t
C
10
5
10
d
555
Ι
0123
10
3
2
10
1
5
r
t,
h
FE
t
d
t
d
t
r
t
r
V
CC
= 30 V
= 10
V
BE
= 5 V
= 2 V
= 0 V
V
BE
V
BE
Storage time tstg = ƒ(IC)
Fall time tf = ƒ(IC)
EHP00745SMBT 2222/A
10
10 mA
C
5
10
3
2
10
1
5
10 10
12 3
Ι
5 5
ns
FE
h
h
FE
s
t
f
t
= 10
= 20
s
t t,
f
h
FE
= 10
2011-08-19
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SMBT2222A/MMBT2222A
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-08-19
8
SMBT2222A/MMBT2222A
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
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intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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