AMPLIFIERS - LINEAR & POWER - CHIP
1
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER,
2 - 6 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Functional Diagram
Features
Typical Applications
General Description
High Psat: +44.5 dBm
Power Gain at Psat: 14 dB
High Output IP3: +48 dBm
Small Signal Gain: 22 dB
Supply Voltage: +28 V @ 1.1 A
50 Ohm Matched Input/Output
Die Size: 3.4 x 4 x 0.1 mm2
The HMC1086 is a 25W Gallium Nitride (GaN) Power
Amplier MMIC which operates between 2 and 6 GHz.
The amplier typically provides 22 dB of small signal
gain, +44.5 dBm of saturated output power, and
+48 dBm output IP3 at +33 dBm output power per
tone. The HMC1086 draws 1100 mA quiescent current
from a +28V DC supply. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration into
Multi-Chip-Modules (MCM). All electrical performance
data was acquired with die eutectically attached to
1.02 mm (40 mil) thick CuMo carrier with multiple
1.0 mil diameter ball bonds connecting the die to
50 Ohm transmission lines on alumina.
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 2 - 3.5 3.5 - 5 5 - 6 GHz
Small Signal Gain 21 22 22 23 21 22 dB
Gain Flatness ±0.5 ±0.5 ±0.5 dB
Gain Variation Over Temperature 0.012 0.016 0.024 dB/ °C
Input Return Loss 10 15 15 dB
Output Return Loss 888dB
Power Gain (Pin @ 25 dBm) 18 18 18 dB
Saturated Output Power (Psat) 44.5 45 44.5 dBm
Output Third Order Intercept (IP3) [2] 48 48 48 dBm
Power Added Efficiency 42 37 34 %
Quiescent Supply Current
(Idd @ Vdd = +28V) 1100 1100 1100 mA
[1] Assumes eutectic attach of die to a 40 mil CuMo carrier, and 25 °C is maintained at the back of the carrier.
[2] Measurement taken at Pout / tone = +33 dBm.
The HMC1086 is ideal for:
• Test Instrumentation
• General Communications
• Radar
Electrical Specications, TA = +25 °C, Vdd = VD1 = VD2 = +28V, Idd = 1100 mA [1]
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
2
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER,
2 - 6 GHz
Gain and Return Loss
Gain vs. Vdd
Input Return Loss
Output Return Loss
Pout vs. Frequency
Power Gain vs. Frequency
-40
-30
-20
-10
0
10
20
30
1.522.533.544.555.566.5
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
10
15
20
25
30
1.522.533.544.555.566.5
Vdd= 24V Vdd= 28V Vdd= 32V
GAIN (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
1.522.533.544.555.566.5
S11
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
1.522.533.544.555.566.5
S22
RETURN LOSS (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
30
23456
25dBm Input Power Psat
POWER GAIN (dB)
FREQUENCY (GHz)
25
30
35
40
45
50
23456
P1dB 25dBm Input Power Psat
POUT (dBm)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
3
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER,
2 - 6 GHz
Power Added Efficiency vs. Pin
Pout vs. Pin
Pout vs. Temperature at Pin= 25dBm
Pout vs. Vdd at Pin= 25dBm
Psat vs. Temperature
Psat vs. Vdd
0
5
10
15
20
25
30
35
40
45
50
6 9 12 15 18 21 24 27 30 33
2 GHz 4 GHz 6 GHz
P.A.E. (%)
PIN (dBm)
20
25
30
35
40
45
50
6 9 12 15 18 21 24 27 30 33
2 GHz 4 GHz 6 GHz
POUT (dBm)
PIN (dBm)
30
35
40
45
50
23456
+25C +85C -40C
POUT (dBm)
FREQUENCY (GHz)
30
35
40
45
50
23456
Vdd= 24V Vdd= 28V
POUT (dBm)
FREQUENCY (GHz)
30
35
40
45
50
23456
+25C +85C -40C
PSAT (dBm)
FREQUENCY (GHz)
30
35
40
45
50
23456
Vdd= 24V Vdd= 28V
PSAT (dBm)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
4
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER,
2 - 6 GHz
Drain Current vs. Pin
OIP3 vs Pin/Tone
IM3 vs. Pin/Tone
Reverse Isolation
Power Dissipation vs. Pin
Second Harmonic vs. Pin
0
0.5
1
1.5
2
2.5
3
3.5
4
6 9 12 15 18 21 24 27 30 33
2 GHz 4 GHz 6 GHz
IDS (mA)
PIN (dBm)
20
25
30
35
40
45
50
55
60
3 6 9 12 15 18 21 24 27
2 GHz 4 GHz 6 GHz
IP3 (dBm)
PIN/TONE (dBm)
0
10
20
30
40
50
60
3 6 9 12 15 18 21 24 27
2 GHz 4 GHz 6 GHz
IM3 (dBc)
PIN/TONE (dBm)
-100
-80
-60
-40
-20
0
1.522.533.544.555.566.5
S12
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
10
20
30
40
50
60
70
6 9 12 15 18 21 24 27 30 33
2 GHz 4 GHz 6 GHz
PDISS (W)
PIN (dBm)
-100
-80
-60
-40
-20
0
5 10 15 20 25 30
2 GHz 4 GHz 6 GHz
SECOND HARMONIC (dB)
PIN (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
5
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER,
2 - 6 GHz
Additive Phase Noise Vs Offset Frequency,
RF Frequency = 4 GHz,
RF Input Power = 27 dBm (P1dB)
-180
-170
-160
-150
-140
-130
-120
-110
-100
-90
-80
100 1K 10K 100K 1M
PHASE NOISE (dBc/Hz)
OFFSET FREQUENCY (Hz)
Notes:
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
6
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER,
2 - 6 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Absolute Maximum Ratings[1]
Drain Bias Voltage (Vdd) +32V
Gate Bias Voltage (Vgg) -8 V to 0V
Maximum Forward Gate Current 11 m A
Maximum RF Input Power (RFIN) 33 dBm
Maximum VSWR[3] 6:1
Maximum Junction Temperature (Tj) 225 °C
Maximum Pdiss (T = 85 °C)
(Derate 455 mW/°C above 85 °C) 63.6W
Thermal Resistance (RTH)[2] 2.2°C/W
Operating Temperature -40 °C to +85°C
Storage Temperature -55 °C to 150 °C
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
[1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings
only. Continuous operation of the device at these conditions is not implied.
[2] Assumes 0.5 mil AuSn die attach to a 40 mil CuMo Carrier with 85°C at the back of the carrier.
[3] Restricted by maximum power dissipation
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
7
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER,
2 - 6 GHz
Pad Descriptions
Pad Number Function Description Pin Schematic
1RFIN This Pad is RF coupled and is matched to 50 Ohms.
The pad has zero Ohms DC resistance.
2, 10 VG1 Gate control voltage for rst stage.
3, 9 VG2 Gate control voltage for second stage.
4,8 VD1 Drain bias for rst stage.
5, 7 VD2 Drain bias for second stage.
6RFOUT This Pad is RF coupled and is matched to 50 Ohms.
Die Bottom GND Die Bottom must be connected to RF/DC ground.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
8
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER,
2 - 6 GHz
Application Circuit
Assembly Diagram
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
9
HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER,
2 - 6 GHz
0.102mm (0.004”) Thick GaN MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaN MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Copper Tungsten
Mounting & Bonding Techniques for GaN MMICs
The die should be eutectically attached directly to the ground plane (see
HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the
chip (Figure 1). If 0.254 mm (10 mil) thick alumina thin lm substrates
must be used, the die should be raised 0.150 mm (6 mils) so that the
surface of the die is coplanar with the surface of the substrate. One way
to accomplish this is to attach the 0.102 mm (4 mil) thick die to a copper
tungsten or CuMo heat spreader which is then attached to the thermally
conductive ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076 mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD
protective containers, and then sealed in an ESD protective bag for
shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
Die placement: A heated vacuum collect (180 °C) is the preferred method of pick up. Ensure that the area of
vacuum contact on the die is minimized to prevent cracking under differential pressure. All air bridges (if applicable)
must be avoided during placement. Minimize impact forces applied to the die during auto-placement.
Mounting
The chip is back-metallized with a minimum of 5 microns of gold and is the RF ground and thermal interface. It is
recommended that the chip be die mounted with AuSn eutectic preforms. The mounting surface should be clean
and at.
Eutectic Reow Process: An 80/20 gold tin 0.5 mil (13 um) thick preform is recommended with a work surface
temperature of 280 °C. Limit exposure to temperatures above 300 °C to 30 seconds maximum. A die bonder or
furnace with 95 % N2 / 5 % H2 reducing atmosphere should be used. No organic ux should be used. Coefficient of
thermal expansion matching is critical for long term reliability.
Die Attach Inspection: X-ray or acoustic scan is recommended.
Wire Bonding
Thermosonic ball or wedge bonding is the preferred interconnect technique. Gold wire must be used in a diameter
appropriate for the pad size and number of bonds applied. Force, time and ultrasonics are critical parameters:
optimize for a repeatable, high bond pull strength. Limit the die bond pad surface temperature to 200 °C maximum.
