Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
70 90
100 125
R
θJL
63 80
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State °C/W
±20Gate-Source Voltage
Drain-Source Voltage 60
Continuous Drain
Current
A, F
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V
0.5
1.6Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Junction and Storage Temperature Range
A
P
D
°C
1.4
0.9
-55 to 150
T
A
=70°C
I
D
0.65
AO3460
60V N-Channel MOSFET
Product Summary
V
DS
(V) = 60V
I
D
= 0.65A (V
GS
= 10V)
R
DS(ON)
< 1.7Ω (V
GS
= 10V)
R
DS(ON)
< 2Ω (V
GS
= 4.5V)
ESD protected
General Description
The AO3460 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected.
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3460
Symbol Min Typ Max Units
BV
DSS
60 V
1
T
J
=55°C 5
I
GSS
Gate-Body leakage current ±10 µA
V
GS(th)
1 2.2 2.5 V
I
D(ON)
1.6 A
1.4 1.7
T
J
=125°C 2.5 3
1.6 2 Ω
g
FS
0.8 S
V
SD
0.8 1 V
I
S
1.2 A
C
iss
22 27 pF
C
oss
6 pF
C
rss
2 pF
t
D(on)
5.3 ns
t
r
2.8 ns
t
D(off)
19.7 ns
t
f
5.5 ns
t
rr
11.3 14 ns
Q
rr
7.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
On state drain current V
GS
=10V, V
DS
=5V
Maximum Body-Diode Continuous Current
SWITCHING PARAMETERS
Input Capacitance
DYNAMIC PARAMETERS
Ω
V
GS
=4.5V, I
D
=0.5A
V
DS
=5V, I
D
=0.65A
I
S
=0.1A,V
GS
=0V
Turn-Off DelayTime V
GS
=10V, V
DS
=30V, R
L
=75Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Output Capacitance
Turn-On DelayTime
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
µA
Gate Threshold Voltage V
DS
=V
GS
I
D
=250uA
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=0.65A, dI/dt=100A/µs, V
GS
=-9V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
V
GS
=10V, I
D
=0.65A
Reverse Transfer Capacitance
I
F
=0.65A, dI/dt=100A/µs, V
GS
=-9V
V
GS
=0V, V
DS
=30V, f=1MHz
Turn-On Rise Time
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 2: Nov. 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS
I
D
=250µA
0
0.5
1
1.5
2
012345
V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
(A)
V
GS
=3.0V
4V
6V 10V
4.5V
0
0.2
0.4
0.6
0.8
1
0 1 2 3 4 5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
-40°C
1
1.5
2
2.5
3
0 0.5 1 1.5
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(Ω
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0.0 0.4 0.8 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25°C
-40°C
0.6
1.0
1.4
1.8
2.2
-50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
V
GS
=10V
I
D
=0.65A
V
GS
=4.5V
I
D
=0.5
1
1.5
2
2.5
3
3.5
4
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(Ω
Ω
Ω
Ω)
25°C
V
DS
=5V
V
GS
=10V
I
D
=0.65A
25°C
125°C
V
GS
=4.5V
3.5V
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS
I
D
=250µA
0
2
4
6
8
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
5
10
15
20
25
30
0 10 20 30 40 50 60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
4
8
12
16
20
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=30V
I
D
=0.65A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
T
on
T
P
D
T
on
P
D
0.001
0.010
0.100
1.000
10.000
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
µ
s
10ms
1ms
0.1s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
10s
1s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com