BP 104 S
Silizium-PIN-Fotodiode
Silicon PIN Photodiode
Lead (Pb) Free Product - RoHS Compliant
BP 104 S
2005-03-02 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm
• Kurze Schaltzeit (typ. 20 ns)
• Geeignet für Vapor-Phase Löten und
IR-Reflow-Löten
•SMT-fähig
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
Bestellnummer
Ordering Code
BP 104 S Q65110A2626
Features
• Especially suitable for applications from
400 nm to 1100 nm
• Short switching time (typ. 20 ns)
• Suitable for vapor-phase and IR-reflow
soldering
• Suitable for SMT
Applications
• Photointerrupters
• IR remote controls
• Industrial electronics
• For control and drive circuits
2005-03-02 2
BP 104 S
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg –40…+100 °C
Sperrspannung
Reverse voltage
VR20 V
Verlustleistung, TA = 25 °C
Total power dissipation
Ptot 150 mW
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotostrom VR = 5 V
Photocurrent
IP55 (≥ 40) nA/lx
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ400 … 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A4.84 mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L×B
L×W
2.20 ×2.20 mm ×mm
Halbwinkel
Half angle
ϕ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current
IR2 (≤ 30) nA
Spektrale Fotoempfindlichkeit, λ=850nm
Spectral sensitivity
Sλ0.62 A/W
Quantenausbeute, λ=850nm
Quantum yield
η0.90 Electrons
Photon
Leerlaufspannung, EV=1000lx
Open-circuit voltage
VO360 (≥ 280) mV
BP 104 S
2005-03-02 3
Kurzschlussstrom, EV= 1000 lx
Short-circuit current
ISC 50 µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr, tf20 ns
Durchlassspannung, IF = 100 mA, E = 0
Forward voltage
VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance
C048 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TKV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TKI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 850 nm
NEP 3.6 ×10–14
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit
D* 6.1 ×1012
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
W
Hz
------------
cm Hz×
W
---------------------------
BP 104 S
2005-03-02 4
Relative Spectral Sensitivity
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Birectional Characteristics
Srel = f (ϕ)
λ
OHF00078
0
rel
S
400
20
40
60
80
%
100
500 600 700 800 900 nm 1100
OHF02284
V
R
Ι
R
0
10
-1
10
0
10
1
10
2
nA
2 4 6 8 10 12 14 16 V 20
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage VO = f (Ev)
Capacitance
C = f (VR), f = 1 MHz, E = 0
lx
3
10
O
V
P
Ι
mVA
µ
O
V
0
10
10
1
10
2
10
3
10
43
10
2
10
1
10
0
10
4
10
2
10
1
10
10
-1
Ι
P
10
0
V
OHF02283
E
V
OHF01778
R
-2
10
C
10
-1
10
0
10
1
10
2
V
0
10
20
30
40
50
pF
60
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10
0
10
1
10
2
10
3
nA
20 40 60 80 ˚C 100
BP 104 S
2005-03-02 5
Maßzeichnung
Package Outlines
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6861
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
Chip position
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.20 (0.087) x 2.20 (0.087)
1.6 (0.063)
(0...0.004)
±0.2 (0.008)
0...0.1
2005-03-02 6
BP 104 S
Lötbedingungen Vorbehandlung nach JEDEC Level 4
Soldering Conditions Preconditioning acc. to JEDEC Level 4
IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
Attention please! The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may
contain dangerous substances. For information on the types in question please contact our Sales
Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
